Sn掺杂氧化铟厚膜中的电子-电子散射
Electron-electron scatttering in Sn-doped indium oxide thick films
摘要：
在$T$温度范围4- 35 K测量了一系列Sn掺杂氧化铟厚膜的低场磁电阻（MR）。通过将MR数据与三维（3D）弱局部化理论预测进行比较，提取每个膜的电子退相速率$1/τ_φ$作为$T$的函数。我们发现，提取的$1/τ_φ$与$T^{3/2}$呈线性变化。此外，在给定的$T$下，$1/τ_φ$随$k_F^{-5/2}l^{-3/2}$线性变化，其中$k_{F}$为费米波数，$l$为电子弹性平均自由程，这些特征可以用三维无序导体中小能量转移的电子-电子散射时间来解释.这种电子退相机制在电子-声子（$e$ -pH）散射过程中占主导地位，因为我们的膜中的载流子浓度比典型金属中的载流子浓度低$\sim$ 3个数量级，这导致$e$ -pH弛豫速率大大抑制。
英文摘要：
We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/τ_φ$ as a function of $T$ for each film was extracted by comparing the MR data with the three-dimensional (3D) weak-localization theoretical predictions. We found that the extracted $1/τ_φ$ varies linearly with $T^{3/2}$. Furthermore, at a given $T$, $1/τ_φ$ varies linearly with $k_F^{-5/2}l^{-3/2}$, where $k_{F}$ is the Fermi wavenumber, and $l$ is the electron elastic mean free path. These features are well explained in terms of the small-energy-transfer electron-electron scattering time in 3D disordered conductors. This electron dephasing mechanism dominates over the electron-phonon ($e$-ph) scattering process because the carrier concentrations in our films are $\sim$ 3 orders of magnitude lower than those in typical metals, which resulted in a greatly suppressed $e$-ph relaxation rate.
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