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arXiv 2012.047892020-12-08cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

Mengwei Si, Zehao Lin, Adam Charnas, Peide D. Ye

备注：: 14 pages, 6 figures, to be published in IEEE Electron Device Letters
DOI：: 10.1109/LED.2020.3043430

英文摘要：

In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at VDS of 0.7 V among all oxide semiconductors. Enhancement-mode In2O3 transistors with ID over 1.0 A/mm at VDS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semiconductor is understood by the formation of high density 2D channel beyond 4E13 /cm2 at HfO2/In2O3 oxide/oxide interface.

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