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arXiv 1502.06171cond-mat.mtrl-sci
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化学计量空位对Ga2SeTe2化合物半导体结构和性能的影响

Effect of stoichiometric vacancies on the structure and properties of the Ga2SeTe2 compound semiconductor

Najeb Abdul-Jabbar, Thomas Forrest, Ronald Gronsky, Edith Bourret-Courchesne, Brian Wirth

摘要:

Ga2SeTe2属于具有大的本征空位浓度的材料家族,由于其在包括热电和相变存储器在内的各种应用中的潜力,这些材料正在被积极研究。在这篇文章中,Ga2SeTe2结构的研究通过同步辐射X射线衍射,电子显微镜,和X射线吸收实验。衍射和显微镜测量表明,在Ga 2SeTe 2的空位有序的程度是高度依赖于热退火。据推测,化学计量空位发挥作用,在本地原子扭曲的Ga 2 SeTe 2(基于收集的X射线吸收光谱中的精细结构信号)。空位有序化对Ga2SeTe2材料性能的影响也通过带隙和霍尔效应测量进行了研究,结果表明,Ga2SeTe2的带隙随着空位有序化而红移约0.05 eV,并伴随着载流子迁移率的增加。结果作为一个令人鼓舞的例子,改变材料的性质,通过内在的结构重排,而不是外在的手段,如掺杂。

英文摘要:

Ga2SeTe2 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga2SeTe2 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga2SeTe2 is highly dependent on thermal annealing. It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga2SeTe2 (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga2SeTe2 material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga2SeTe2 band gap redshifts by ~0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means such as doping.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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