AI 中文总结
该研究通过向Fe₂VAl外延薄膜中掺杂Ti或W调控载流子类型，精细优化能带结构，获得高功率因子与zT值，为热电器件材料开发提供了新途径。
AI 中文摘要
本研究表明，通过共溅射沉积向化学计量比的L2₁ Fe₂VAl薄膜中添加Ti或W，可得到比化学计量对应物具有更优异热电性能的非化学计量比薄膜合金。Ti的引入诱导p型半导体行为，而W的引入使材料向n型转变，从而可在单一母体（Fe₂VAl）材料体系内同时调控两种载流子类型，使其成为热电器件的理想选择。Ti和W的引入会部分取代化学计量化合物中的V，这种V的部分取代可精细调控体系的能带结构和输运性质。采用该方法，我们获得了p型和n型薄膜的优异最大功率因子值，分别为1300 μW/m·K²和2100 μW/m·K²，对应的最大品质因子zT分别为0.07和0.14。
英文摘要
We show that the addition of Ti or W to stoichiometric L2$_1$ Fe$_2$VAl thin films by sputter codeposition produces off stoichiometric thin film alloys with superior thermoelectric properties than their stoichiometric counterparts. Ti incorporation induces p-type semiconducting behavior, while W incorporation shifts the material toward n-type, hereby enabling simultaneous tuning of both carrier types within a single parent (Fe$_2$VAl) material system, making it highly desirable for thermoelectric devices. The introduction of both Ti and W partly substitutes V in the stoichiometric compound. The partial substitution of V in the stoichiometric alloy allows fine-tuning the band structure of the system and transport properties. With this approach we obtain exceptional maximum power factor values for p and n-type films of 1300 $μ$W/m$\cdot$K$^2$ and 2100 $μ$W/m$\cdot$K$^2$ ,respectively, yielding maximum figures of merit zT of 0.07 and 0.14, respectively.
Comments15 pages
