Contradictory theoretical results for oxygen vacancies in SrTiO$_3$ (STO) were often related to the peculiar properties of STO, which is a $d^0$ transition metal oxide with mixed ionic-covalent bonding. Here, we apply, for the first time, density functional theory (DFT) within the extended Hubbard DFT+$U$+$V$ approach, including on-site as well as inter-site electronic interactions, to study oxygen-deficient STO with Hubbard $U$ and $V$ parameters computed self-consistently via density-functional perturbation theory. Our results demonstrate that the extended Hubbard functional is a promising approach to study defects in materials with electronic properties similar to STO. Indeed, DFT+$U$+$V$ provides a better description of stoichiometric STO compared to standard DFT or DFT+$U$, the band gap and crystal field splitting being in good agreement with experiments. In turn, also the description of the electronic properties of oxygen vacancies in STO is improved, with formation energies in excellent agreement with experiments as well as results obtained with the most frequently used hybrid functionals, however at a fraction of the computational cost. While our results do not fully resolve the contradictory findings reported in literature, our systematic approach leads to a deeper understanding of their origin, which stems from different cell sizes, STO phases, the exchange-correlation functional, and the treatment of structural relaxations and spin-polarization.
Using first-principles density functional theory calculations, we find a strong position and thickness dependence of the formation energy of oxygen vacancies in LaAlO3|SrTiO3 (LAO|STO) multilayers and interpret this with an analytical capacitor model. Oxygen vacancies are preferentially formed at p-type SrO|AlO2 rather than at n-type LaO|TiO2 interfaces; the excess electrons introduced by the oxygen vacancies reduce their energy by moving to the n-type interface. This asymmetric behavior makes an important contribution to the conducting (insulating) nature of n-type (p-type) interfaces while p…
Motivated by recent angle-resolved photoemission spectroscopy (ARPES) observations of a highly metallic two-dimensional electron gas (2DEG) at the (001) vacuum-cleaved surface of SrTiO3 and the subsequent discussion on the possible role of oxygen vacancies for the appearance of such a state (Ref 1), we analyze by means of density functional theory (DFT) the electronic structure of various oxygen-deficient SrTiO3 surface slabs. We find a significant surface reconstruction after introducing oxygen vacancies and we show that the charges resulting from surface-localized oxygen vacancies --independ…
The surface reconstruction of SrTiO$_3$(110) is studied with scanning tunneling microscopy and density functional theory (DFT) calculations. The reversible phase transition between (4$\times$1) and (5$\times$1) is controlled by adjusting the surface metal concentration [Sr] or [Ti]. Resolving the atomic structures of the surface, DFT calculations verify that the phase stability changes upon the chemical potential of Sr or Ti. Particularly, the density of oxygen vacancies is low on the thermodynamically stabilized SrTiO$_3$(110) surface.
We report the enthalpy of oxygen vacancy formation in thin films of electron-doped SrTiO$_{3}$, under different degrees of epitaxial stress. We demonstrate that both compressive and tensile strain decrease this energy at a very similar rate, and promote the formation of stable doubly ionized oxygen vacancies. Moreover, we also show that unintentional cationic vacancies introduced under typical growth conditions, produce a characteristic rotation pattern of TiO$_6$ octahedra. The local concentration of oxygen vacancies can be modulated by an electric field with an AFM tip, changing not only the…
Using density-functional-theory (DFT) calculations with the HSE06 hybrid functional, we accurately evaluate the critical thickness of LaAlO3 film for the intrinsic doping in LaAlO3/SrTiO3 (LAO/STO) heterstructures. The calculated critical thickness of 6 unit-cell (uc) layers suggests to rule out the intrinsic doping mechanism. We also calculate the density of oxygen vacancies on the LAO surface at varying LAO thicknesses, preparation oxygen pressures and temperatures by using the condition of chemical equilibrium and DFT calculations. We find that once LAO thickness >=3 uc high-density (~ 10^1…
Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron formation and thermoelectric properties of the transition metal oxide (TMO) thin films. With decreasing oxygen partial pressure during the film growth (P(O2)), a systematic lattice expansion was observed along with the increased elemental vacancy and carrier density, experimentally determined using optical spectroscopy. Moreover, we observed an absorption in the mid…
The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually increased in our device, we observe systematic generation and annihilation of oxygen vacancies evidenced from the hysteretic conductance behavior in graphene. Furthermore, based on the experimentally observed linear scaling relation between the effective capacitance and the voltage sweep range, a simple model is constructed to manifest the relationship among t…
Modifications of the electronic bands of thin FeSe films due to oxygen vacancies in the supporting SrTiO 3 (001) substrate - and the interplay with spin-orbit coupling, magnetism, and epitaxy - are investigated by first-principles supercell calculations. Unfolded (k-projected) bands show that the oxygen vacancies both provide electron doping to the interface FeSe layer and also have notable effects on the details of the bands around the Fermi level, including renormalizing the width of the Fe-3d band near the Fermi level by a factor of about 0.6, and causing a splitting of ~40 meV at the M poi…
The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap transition level was observed on SrO-terminated surfaces, at 2.7 eV above the valence band maximum. The density of centers responsible for this level was found to increase with surface segregation of oxygen vacancies and decrease with exposure to molecular oxygen. Based on these finding, the level is attributed to surface O vacancies. A level at a similar energy is predicted theoretically on SrO-terminated surfaces. Fo…
Understanding the diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improve catalytic performance, etc. In this manuscript, using an external electric field produced by an AFM tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin-films of SrTiO$_3$ under compressive/tensile epitaxial strain. Tensile strain produces a substantial increase of the diffusion coefficient, facilitating the mobility of vacancies through the film. Additionally, the effect of tip bias, pulse time, and tempe…
We investigated the role of oxygen vacancy in n-type interface of LaAlO3 (LAO) overlayer on SrTiO3 (STO) (001) by carrying out density-functional-theory calculations. Comparing the total energies of the configurations with one vacancy in varying locations we found that oxygen vacancies favor to appear first in LAO surface. These oxygen vacancies in the surface generate a two-dimensional distribution of carriers at the interface, resulting in band bending at the interface in STO side. Dependent on the concentration of oxygen vacancies in LAO surface, the induced carrier charge at the interface …
Oxygen vacancies in strontium titanate surfaces (SrTiO3) have been linked to the presence of a two-dimensional electron gas with unique behavior. We perform a detailed density functional theory study of the lattice and electronic structure of SrTiO3 slabs with multiple oxygen vacancies, with a main focus on two vacancies near a titanium dioxide terminated SrTiO3 surface. We conclude based on total energies that the two vacancies preferably inhabit the first two layers, i.e. they cluster vertically, while in the direction parallel to the surface, the vacancies show a weak tendency towards equal…
Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. We propose that the microscopic origin of resistance switching in this class of materials is due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.
The complex elastic compliance s11(w,T) of SrTiO3-d has been measured as a function of the O deficiency d < 0.01. The two main relaxation peaks in the absorption are identified with hopping of isolated O vacancies over a barrier of 0.60 eV and reorientation of pairs of vacancies involving a barrier of 1 eV. The pair binding energy is ~0.2 eV and indications for additional clustering, possibly into chains, is found already at d ~0.004. The anistropic component of the elastic dipole of an O vacancy is Deltalambda = 0.026.
The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive and coherent picture that the interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies fully compensates the polarization potential divergence in LaAlO$_{3}$/SrTiO$_{3}$, explaining naturally the experimental observations under different conditions. While lattice distortions and a charge redistribution between LaO and AlO$_2…
Epitaxially grown SrTiO$_{3}$ (STO) thin films are material enablers for a number of critical energy-conversion and information-storage technologies like electrochemical electrode coatings, solid oxide fuel cells and random access memories. Oxygen vacancies (${\rm V_{O}}$), on the other hand, are key defects to understand and tailor many of the unique functionalities realized in oxide perovskite thin films. Here, we present a comprehensive and technically sound ab initio description of ${\rm V_{O}}$ in epitaxially strained (001) STO thin films. The novelty of our first-principles study lies in…
This paper shows that the oxygen vacancies observed experimentally in thin films of LaCoO3 subject to tensile strain are thermodynamically stable according to ab initio calculations. By using DFT calculations, we show that oxygen vacancies on the order of 6 % forming chains perpendicular to the (001) direction are more stable than the stoichiometric solution. These lead to magnetic Co2+ ions surrounding the vacancies that couple ferromagnetically. The remaining Co3+ cations in an octahedral environment are non magnetic. The gap leading to a ferromagnetic insulating phase occurs naturally and w…
Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd-vacancies introduce localized electronic states resulting in the variable range hopping transport at low temperatures. At a fixed Nd-vacancies concentration, a crossover from Mott to Efros-Shklovskii (ES) variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative w…
The optical conductivity ($σ_{1}$) of SrTiO$_{3}$ for various vacancies has been systematically studied using a combination of ultraviolet - vacuum ultraviolet (UV-VUV) reflectivity and spectroscopic ellipsometry. For cation (Ti) vacancies, $σ_{1}$ shows large spectral weight transfer over a wide range of energy from as high as 35 eV to as low as 0.5 eV and the presence of mid-gap states, suggesting that strong correlations play an important role. While for anion (O) vacancies $σ_{1}$ shows changes from 7.4 eV up to 35 eV. These unexpected results can be explained in terms of orbital reconstru…
Strontium titanate, SrTiO3, a widely used substrate material for electronic oxide thin film devices, has provided many interesting features. In a combination with a similar oxide material, LaAlO3, it has recently received great interest. It was suggested that two-dimensional electron gas is formed at the interface between SrTiO3 and LaAlO3, resulting in high electrical conductivity and mobility. In this report we demonstrate that the transport properties in those heterostructures are very sensitive to the deposition parameters during thin film growth. Using cathode- and photoluminescence studi…
Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant type of defect in these materials but a fundamental understanding of their stability and electronic structure has so far mostly been established in the bulk or strained bulk, neglecting interfaces and surfaces present in a thin-film geometry. We investigate here, via density functional theory calculations, oxygen vacancies in the model system of a SrMnO$_3$ (SMO) thin film grown on a SrTiO$_3$ (STO) (001) substrate. …
We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.
The relative significance of quantum conductivity correction and magnetic nature of electrons in understanding the intriguing low-temperature resistivity minimum and negative magnetoresistance of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces has been a long outstanding issue since its discovery. Here we report a comparative magnetotransport study on amorphous and oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures at a relatively high-temperature range, where the orbital scattering is largely suppressed by thermal fluctuations. Despite of a predominantly negative out-of-p…
We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in LaAlO3 slab can suppress the surface conductivity. In contrast, in insulating SrTiO3 slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating LaAlO3/SrTiO3 het…
Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinit…
We perform first-principles calculations of the quasiparticle defect states, charge transition levels, and formation energies of oxygen vacancies in rutile titanium dioxide. The calculations are done within the recently developed combined DFT+GW formalism, including the necessary electrostatic corrections for the supercells with charged defects. We find the oxygen vacancy to be a negative U defect, where U is the defect electron addition energy. For the values of Fermi level below 2.8 eV (relative to the valence band maximum) we find the +2 charge state of the vacancy to be the most stable, wh…
Understanding the role of defects in oxide heterostructures is crucial for future materials control and functionalization. We hence study the impact of oxygen vacancies (OVs) at variable concentrations on orbital- and spin exchange in the LaAlO$_3$/SrTiO$_3$ interface by first principles many-body theory and real-space model-Hamiltonian techniques. Intricate interplay between Hubbard $U$ and Hund's coupling $J_{\rm H}$ for OV-induced correlated states is demonstrated. Orbital polarization towards an effective $e_g$ state with predominant local antiferromagnetic alignment on Ti sites near OVs i…
The electronic structure of SrTiO3 and SrHfO3 (001) surfaces with oxygen vacancies is studied by means of first-principles calculations. We reveal how oxygen vacancies within the first atomic layer of the SrTiO3 surface (i) induce a large antiferrodistortive motion of the oxygen octahedra at the surface, (ii) drive localized magnetic moments on the Ti-3d orbitals close to the vacancies and (iii) form a two-dimensional electron gas localized within the first layers. The analysis of the spin-texture of this system exhibits a splitting of the energy bands according to the Zeeman interaction, lowe…
In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at temperature ranging between 550 and 840$^\circ$C in an ultrahigh vacuum. Annealing induced oxygen vacancies (O$_{vac}$) impart considerable changes in the electronic structure of SrTiO$_3$. Using core-level photoemission spectroscopy, we have studied the chemical potential shift ($Δμ$) as a function of annealing temperature. The result shows that the chemical potential monotonously increases with electron doping in SrTiO$_{3-δ}$. The monotonous increase of the chemical potential rules out the existe…
Obtaining an accurate theoretical description of the emergent phenomena in oxide heterostructures is a major challenge. Recently, intriguing paramagnetic spin and pinned orbital moments have been discovered by x-ray magnetic circular dichroïsm measurements at the Cu $L_{2,3}$-edge of a tetragonal CuO/SrTiO$_3$ heterostructure. Using first principles calculations, we propose a scenario that explains both types of moments, based on the formation of oxygen vacancies in the TiO$_2$ interface layer. We show the emergence of a paramagnetic 2D electron gas hosted in the interface CuO layer. It is inv…
Monolayer FeSe on SrTiO$_3$ superconducts with reported $T_\mathrm{c}$ as high as 100 K, but the dramatic interfacial $T_\mathrm{c}$ enhancement remains poorly understood. Oxygen vacancies in SrTiO$_3$ are known to enhance the interfacial electron doping, electron-phonon coupling, and superconducting gap, but the detailed mechanism is unclear. Here we apply scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) to FeSe/SrTiO$_3$ to image the diffusion of selenium into SrTiO$_3$ to an unexpected depth of several unit cells, consistent with the simultaneous…
We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 1016 cm-2 and a mobility around 104 cm2 V-1 s-1. In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carrier…
The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 have called in question the original polarization catastrophe model. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thicknes…
We investigate the behavior of oxygen vacancies in three different metal-oxide semiconductors (rutile and anatase TiO2, monoclinic WO3, and tetragonal ZrO2) using a recently proposed hybrid density-functional method in which the fraction of exact exchange is material-dependent but obtained ab initio in a self-consistent scheme. In particular, we calculate charge-transition levels relative to the oxygen-vacancy defect and compare computed optical and thermal excitation/emission energies with the available experimental results, shedding light on the underlying excitation mechanisms and related m…
The defect stability in a prototypical perovskite oxide superlattice consisting of SrTiO$_3$ and PbTiO$_3$ (STO/PTO) is determined using first principles density functional theory calculations. Specifically, the oxygen vacancy formation energies E$_v$ in the paraelectric and ferroelectric phases of a superlattice with four atomic layers of STO and four layers of PTO (4STO/4PTO) are determined and compared. The effects of charge state, octahedral rotation, polarization, and interfaces on the E$_v$ are examined. The formation energies vary layer-by-layer in the superlattices, with E$_v$ being hi…
Lattice anharmonicity is thought to strongly affect vacancy concentrations in metals at high temperatures. It is however non-trivial to account for this effect directly using density functional theory (DFT). Here we develop a deep neural network potential for aluminum that overcomes the limitations inherent to DFT, and we use it to obtain accurate anharmonic vacancy formation free energies as a function of temperature. While confirming the important role of anharmonicity at high temperatures, the calculation unveils a markedly nonlinear behavior of the vacancy formation entropy and shows that …
Quasi-two-dimensional electron systems (q-2DES) are formed in various hetero-structures, including oxide interfaces. Oxygen vacancies (OVs) in oxides like $\mathrm{SrTiO_3}$ are known to produce electronic carriers. A novel way to produce $\mathrm{SrTiO_{3-δ}}$ on the surface using a low-energy $\mathrm{H_2}$ plasma is shown here. It results in a q-2DES with mobility as high as $μ\sim 20,000 \; cm^2V^{-1}s^{-1}$, displaying quantum oscillations in magneto-resistance. We can achieve a sharper or weaker confinement potential by adjusting the process pressure. The system with sharper confinement …
There is considerable interest in the pH-dependent switchable biocatalytic properties of cerium oxide nanoparticles (CeNPs) in biomedicine, where these materials exhibit beneficial antioxidant activity against reactive oxygen species at neutral and basic physiological pH but cytotoxic prooxidant activity at acidic pathological pH. Oxygen vacancies play a key role in such biocatalytic activities. While the general characteristics of the role of oxygen vacancies are known, the mechanism of their action at the atomic scale under different pH conditions has yet to be elucidated. The present work a…
Variety of conducting heterointerfaces have been made between SrTiO3 substrates and thin capping layers of distinctly different oxide materials that can be classified into polar band insulators (e.g. LaAlO3), polar Mott insulators (e.g. LaTiO3), apparently non-polar band insulators (e.g. γ-Al2O3), and amorphous oxides (e.g. amorphous SrTiO3). A fundamental question to ask is if there is a common mechanism that governs interfacial conductivity in all these heterointerfaces. Here, we examined the conductivity of different kinds of heterointerfaces by annealing in oxygen and surface treatment wit…
We shed light on the interplay between structure and many-body effects relevant for itinerant ferromagnetism in LaAlO$_3$/SrTiO$_3$ heterostructures. The realistic correlated electronic structure is studied by means of the (spin-polarized) charge self-consistent combination of density functional theory (DFT) with dynamical mean-field theory (DMFT) beyond the realm of static correlation effects. Though many-body behavior is also active in the defect-free interface, a ferromagnetic instability occurs only with oxygen vacancies. A minimal Ti two-orbital $e_g$-$t_{2g}$ description for the correlat…
Oxygen vacancies have been identified to play an important role in accelerating grain growth in polycrystalline perovskite-oxide ceramics. In order to advance the fundamental understanding of growth mechanisms at the atomic scale, classical atomistic simulations were carried out to investigate the atomistic structures and oxygen vacancy formation energies at grain boundaries in the prototypical perovskite-oxide material SrTiO$_3$. In this work, we focus on two symmetric tilt grain boundaries, namely $Σ$5(310)[001] and $Σ$5(210)[001]. A one-dimensional continuum model is adapted to determine th…
Antiphase domain boundaries (APDBs) in the ($n \times 1$)($n=4,5$) reconstructions of the SrTiO$_3$(110) surface were studied with scanning tunneling microscopy, x-ray photoemission spectroscopy, and density functional theory (DFT) calculations. Two types of APDBs form on each reconstruction; they consist of Ti$_x$O$_y$ vacancy clusters with a specific stoichiometry. The presence of these clusters is controlled by the oxygen pressure during annealing. The structural models of the vacancy clusters are resolved with DFT, which also shows that their relative stability depends on the chemical pote…
We provide insights into the influence of surface termination on the oxygen vacancy incorporation for the perovskite model material SrTiO3 during annealing in reducing gas environments. We present a novel approach to control to tailor the oxygen vacancy formation by controlling the termination. We prove that a SrO-termination can inhibit the incorporation of oxygen vacancies across the (100)-surface and apply this to control their incorporation during thin film growth. Utilizing the conducting interface between LaAlO3 and SrTiO3, we could tailor the oxygen-vacancy based conductivity contributi…
The emerging Ni-based superconducting oxide thin films are rather intriguing to the entire condensed matter physics. Here we report some brief experimental results on transport measurements for a 14-nm-thick superconducting Nd0.8Sr0.2NiO2/SrTiO3 thin-film heterostructure with an onset transition temperature of ~9.5 K. Photoluminescence measurements reveal that there is negligible oxygen vacancy creation in the SrTiO3 substrate during thin-film deposition and post chemical reduction for the Nd0.8Sr0.2NiO2/SrTiO3 heterostructure. It was found that the critical current density of the Nd0.8Sr0.2Ni…
The properties of neutral defects in SrTiO3 are calculated using the screened hybrid density functional of Heyd, Scuseria, and Ernzerhof. The formation energies, the crystal field splittings affecting the SrTiO3 band structure, and the relaxation geometries around each defect are discussed. Oxygen vacancies introduced in SrTiO3 are found to cause a small tetragonal elongation of the lattice along the z-axis. The resulting conduction band minimum electron effective masses deviate from the bulk values and support the proposal of enhanced electron mobility along the direction of the compressive s…
Motivated by the puzzling report of the observation of a ferromagnetic insulating state in LaMnO$_3$/SrTiO$_3$ heterostructures, we calculate the electronic and magnetic state of LaMnO$_3$, coherently matched to a SrTiO$_3$ square substrate within a "strained-bulk" geometry. We employ three different density functional theory based computational approaches: (a) density functional theory (DFT) supplemented with Hubbard U (DFT+U), (b) DFT + dynamical mean field theory (DMFT), and (c) a hybrid functional treatment of the exchange-correlation functional. While the first two approaches include loca…
Large scale first-principles calculations based on density functional theory (DFT) employing two different methods (atomic orbitals and plane wave basis sets) were used to study the energetics, geometry, the electronic charge redistribution and migration for adsorbed atomic and molecular oxygen on defect-free SrTiO3(001) surfaces (both SrO- and TiO2-terminated), which serves as a prototype for many ABO3-type perovskites. Both methods predict substantial binding energies for atomic O adsorption at the bridge position between the oxygen surface ions and an adjacent metal ion. A strong chemisorpt…
Grain boundaries (GBs) can be used as traps for solute atoms and defects, and the interaction between segregants and GBs is crucial for understanding the properties of nanocrystalline materials. In this study, we have systematically investigated the tendency of Pt to segregate as well as the interaction between Pt and oxygen vacancies at the sigma 3/(111) GB of ceria (CeO2). The Pt atom has a stronger tendency to segregate to the sigma 3/(111) GB than to the (111) and (110) free-standing surfaces, but the tendency is weaker than to the (100) free-standing surface. Mechanic contributions (latti…
Since recently, some interests appeared in TiO as a thin film coating material due to its promising physical properties. Moreover, because of the existence of intrinsic vacancies, TiO demonstrates memristive properties. To use these compounds in active region for memristive switching, the investigation of the dynamical stability of these compounds is of importance. Therefore, the structural, electronic, and dynamical properties of TiO in two different phases, namely cubic and monoclinic structures along with vacancies, are debated from the framework of density functional theory. The structural…
Mn is used as a dopant to improve the electromechanical properties of perovskite oxides. We elucidate the role of Mn defects and associated vacancies on the electronic, atomic and ferroelectric properties of BaTiO$_3$. Using density functional theory (DFT) and DFT+U we investigate the equilibrium geometry and electronic properties of Mn ion on A or B sites and with compensating oxygen vacancies. We study the change in the oxidation state of Mn in response to local environment changes, such as the presence of oxygen vacancies.
The interaction of water with oxide surfaces is of great interest for both fundamental science and applications. We present a combined theoretical [density functional theory (DFT)] and experimental [Scanning Tunneling Microscopy (STM), photoemission spectroscopy (PES)] study of water interaction with the two-dimensional titania overlayer that terminates the SrTiO$_3$(110)-(4$\times$1) surface and consists of TiO$_4$ tetrahedra. STM, core-level and valence band PES show that H$_2$O neither adsorbs nor dissociates on the stoichiometric surface at room temperature, while it dissociates at oxygen …
Correlated band theory is employed to investigate the magnetic and electronic properties of different arrangements of oxygen di- and tri-vacancy clusters in SrTiO$_3$. Hole and electron doping of oxygen deficient SrTiO$_3$ yields various degrees of magnetization as a result of the interaction between localized magnetic moments at the defected sites. Different kinds of Ti atomic orbital hybridization are described as a function of the doping level and defect geometry. We find that magnetism in SrTiO$_{3-δ}$ is sensitive to the arrangement of neighbouring vacancy sites, charge carrier density, a…
