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arXiv 1502.02870cond-mat.mes-hallcond-mat.mtrl-sci
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铁磁/半导体双层膜中相对论自旋矩的解纠缠

Disentangling relativistic spin torques in a ferromagnet/semiconductor bilayer

T. D. Skinner, K. Olejník, L. K. Cunningham, H. Kurebayashi, R. P. Campion, B. L. Gallagher, T. Jungwirth, A. J. Ferguson

摘要:

最近发现的相对论自旋力矩的横向电流在铁磁/顺磁界面诱导的新一代电控磁存储器件的候选自旋电子技术。唯象地,力矩有场的和反阻尼的分量,具有不同的对称性。在显微镜下,它们被认为有两种可能的起源。在一幅图中,顺磁体中通过相对论自旋霍尔效应(SHE)产生的自旋电流被铁磁体吸收并引起自旋转移矩(STT)。在另一幅图中,通过相对论逆自旋电流效应(ISGE)产生非平衡自旋密度,并在铁磁体中诱导自旋轨道矩(SOT)。从顺磁半导体的早期观察来看,SHE和ISGE被称为伴随现象,它们都可以允许在同一结构中电对齐自旋。实验上解开SHE和ISGE的贡献对于我们理解铁磁/顺磁界面自旋力矩的基本物理性质是至关重要的。为了实现这一目标,我们准备了一个外延过渡金属铁磁体/超导顺磁体单晶结构,并进行了室温矢量分析的相对论自旋力矩的全电铁磁共振(FMR)技术的装置。通过设计,在我们的结构中,类场转矩由基于ISGE的机制控制,而类抗阻尼转矩由基于SHE的机制控制

英文摘要:

Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices. Phenomenologically, the torques have field-like and antidamping-like components with distinct symmetries. Microscopically, they are considered to have two possible origins. In one picture, a spin-current generated in the paramagnet via the relativistic spin Hall effect (SHE) is absorbed in the ferromagnet and induces the spin transfer torque (STT). In the other picture, a non-equilibrium spin-density is generated via the relativistic inverse spin galvanic effect (ISGE) and induces the spin-orbit torque (SOT) in the ferromagnet. From the early observations in paramagnetic semiconductors, SHE and ISGE are known as companion phenomena that can both allow for electrically aligning spins in the same structure. It is essential for our basic physical understanding of the spin torques at the ferromagnet/paramagnet interface to experimentally disentangle the SHE and ISGE contributions. To achieve this we prepared an epitaxial transition-metal-ferromagnet/semiconductor-paramagnet single-crystal structure and performed a room-temperature vector analysis of the relativistic spin torques by means of the all-electrical ferromagnetic resonance (FMR) technique. By design, the field-like torque is governed by the ISGE-based mechanism in our structure while the antidamping-like torque is due to the SHE-based mechanism

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