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arXiv 2007.02264cond-mat.mes-hallcond-mat.mtrl-sci
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全溅射拓扑绝缘体-铁磁体多层膜中的超高效自旋-轨道矩磁化翻转

Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers

Tuo Fan, Nguyen Huynh Duy Khang, Soichiro Nakano, Pham Nam Hai

摘要:

具有大垂直磁各向异性的铁磁体的自旋轨道力矩(SOT)磁化翻转在下一代非易失性磁阻随机存取存储器(MRAM)中具有巨大的潜力。这就需要一个高性能的纯自旋电流源,具有大的自旋霍尔角和高的电导率,这可以通过大规模生产技术制造。在这项工作中,我们证明了高效和强大的SOT磁化开关在所有溅射的BiSb拓扑绝缘体垂直磁化Co/Pt多层膜。尽管通过工业友好的磁控溅射而不是实验室分子束外延来制造,但是拓扑绝缘体层BiSb显示出$θ$ $_{SH}$ = 12.3的大自旋霍尔角和$σ$ = 1.5 x $10^5$ $Ω^{-1}$ m $^{-1}$的高电导率。我们的研究结果证明了BiSb拓扑绝缘体用于实现超低功耗SOT-MRAM和其他基于SOI的自旋电子器件的大规模生产能力。

英文摘要:

Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high-performance pure spin current source with a large spin Hall angle and high electrical conductivity, which can be fabricated by a mass production technique. In this work, we demonstrate ultrahigh efficient and robust SOT magnetization switching in all-sputtered BiSb topological insulator - perpendicularly magnetized Co/Pt multilayers. Despite fabricated by the industry-friendly magnetron sputtering instead of the laboratory molecular beam epitaxy, the topological insulator layer, BiSb, shows a large spin Hall angle of $θ$$_{SH}$ = 12.3 and high electrical conductivity of $σ$ = 1.5x$10^5$ $Ω^{-1}$m$^{-1}$. Our results demonstrate the mass production capability of BiSb topological insulator for implementation of ultralow power SOT-MRAM and other SOT-based spintronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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