Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene
François Federspiel, Guillaume Froehlicher, Michel Nasilowski, Silvia Pedetti, Ather Mahmood, Bernard Doudin, Serin Park, Jeong-O Lee, David Halley, Benoît Dube… 展开作者
François Federspiel, Guillaume Froehlicher, Michel Nasilowski, Silvia Pedetti, Ather Mahmood, Bernard Doudin, Serin Park, Jeong-O Lee, David Halley, Benoît Dubertret, Pierre Gilliot, Stéphane Berciaud
备注:
Main text (+ 5 figures) and Supporting Information (+ 7 figures)
The near-field Coulomb interaction between a nano-emitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, i) zero-dimensional CdSe/CdS nanocrystals and ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances $d$, the energy transfer rate from individual nanocrystals to graphene decays as $1/d^4$. In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law, but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.
In two-dimensional van der Waals (vdWs) materials, the relative twist angle between adjacent layers not only controls their electronic properties, but also determines their stacking energy. This effect makes it much easier to realize energetically favorable configurations of the vdWs materials, for example, Bernal-stacked structure of bilayer graphene. Here we demonstrate that we can controllably tailor adhesive energy landscape of graphene nanostructures on graphene and stabilize the system with tunable twist angle by using a one-dimensional tilt grain boundary (GB). The area ratio with diffe…
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The construction of atomically-precise carbon nanostructures holds promise for developing novel materials for scientific study and nanotechnology applications. Here we show that graphene origami is an efficient way to convert graphene into atomically-precise, complex, and novel nanostructures. By scanning-tunneling-microscope manipulation at low temperature, we repeatedly fold and unfold graphene nanoislands (GNIs) along arbitrarily chosen direction. A bilayer graphene stack featuring a tunable twist angle and a tubular edge connection between the layers are formed. Folding single-crystal GNIs…
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We investigate the dynamic nuclear polarization from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins coupled to them in semiconductor nanostructures. We derive the time and position dependence of the induced nuclear spin polarization and dipolar magnetic fields. In GaAs/AlGaAs parabolic quantum wells the nuclear spin polarization can be as high as 80% and the induced nuclear magnetic fields can approach a few gauss with an associated nuclear resonance shift of the order of kHz when the electronic system is 100% spin polarized. These fields and shifts can be …
Integration of two-dimensional (2D) van der Waals (vdWs) materials with non-2D materials to realize mixed-dimensional heterostructures has potential for creating functional devices beyond the reach of existing materials and has long been a pursuit of the material science community. Here we report the patterning of monolayer/bilayer transition metal dichalcogenide (TMD) nanostructures with nanometer-precision, tunable sizes and sites at interfaces of graphene/TMD heterostructures. Our experiments demonstrate that the TMD nanostructures can be created at selected positions of the interface using…
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We derive interatomic potentials for zinc blende InAs, InP, GaAs and GaP semiconductors with possible applications in the realm of nanostructures. The potentials include bond stretching interaction between the nearest and next-nearest neighbors, a three body term and a long-range Coulomb interaction. The optimized potential parameters are obtained by (i) fitting to bulk phonon dispersions and elastic properties and (ii) constraining the parameter space to deliver well behaved potentials for the structural relaxation and vibrational properties of nanostructure clusters. The targets are thereby …
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Excitonic contributions to absorption and photocurrent generation in semiconductor nanostructures are described theoretically and simulated numerically using steady-state non-equilibrium Green's function theory. In a first approach, the coherent interband polarization including Coulomb corrections is determined from a Bethe-Salpeter-type equation for the equal time interband single-particle charge carrier Green's function. The effects of excitonic absorption on photocurrent generation are considered on the same level of approximation via the derivation of the corresponding corrections to the e…
Anharmonicity of the inter-atomic potential is taken into account for the quantitative simulation of the conduction and valence band offsets for highly-strained semiconductor heterostructures. The anharmonicity leads to a weaker compressive hydrostatic strain than that obtained with the commonly used quasi-harmonic approximation of the Keating model. Inclusion of the anharmonicity in the simulation of strained InAs/GaAs nanostructures results in an improvement of the electron band offset computed on an atomistic level by up to 100 meV compared to experiment.
We present experimental coherent two-dimensional Fourier transform spectra of the exciton resonances in semiconductor quantum wells for a pulse sequence that isolates two-quantum coherences. By measuring the real part of the spectra, we can determine that the spectra are dominated by two quantum coherences due to many-body interactions, not bound biexcitons. Simulations performed using dynamics controlled truncation agree well with the experiments.
Phonons - quanta of crystal lattice vibrations - reveal themselves in all electrical, thermal and optical phenomena in materials. Nanostructures open exciting opportunities for tuning the phonon energy spectrum and related properties of materials for specific applications. The possibilities for controlled modification of the phonon transport and phonon interactions - referred to as phonon engineering or phononics - increase even further with the advent of graphene and two-dimensional van der Waals materials. We describe methods for tuning the phonon spectrum and controlling the thermal propert…
We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process itself. Single-layer-graphene deposition and its "blistering" on the substrate are demonstrated by a combination of Raman spectroscopy, scanning electron microscopy and atomic-force microscopy measuremen…
The impact of the edges and presence of dopants to the work function (WF) of graphene nanoribbons (GNR) and nanoflakes was studied by an ab initio approach. The strong dependence of the WF upon the GNR structure was found and a promising character for the field emission by the donor type impurities was observed. Basing on the predominant impact of the nanostructure edges to the emission properties, the small graphene flakes were investigated as a possible source for the electron emission. The obtained weak dependence of the low WF values of the graphene flakes on their size and shape allows to…
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Optical spectroscopy and quantum control of semiconductor quantum dots has become a vivid field of research. The recent progress in both theory and experiment is reviewed, with emphasis on theoretical and computational concepts.
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In this review we focus on electronic transport through semiconductor nanostructures which are driven by ac fields. Along the review we describe the available experimental information on different nanostructures, like resonant tunneling diodes, superlattices or quantum dots, together with the theoretical tools needed to describe the observed features. These theoretical tools such as, for instance, the Floquet formalism, the non-equilibrium Green's function technique or the density matrix technique, are suitable for tackling with photon-assisted transport problems where the interplay of differe…
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A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.
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In this paper, the form of the indirect interaction between local impurities in flakes and in graphene ring is analytically investigated. We calculate this characteristic in the framework of the tight-binding model for a finite nanocarbon system with periodic boundary conditions. A pronounced dependence of the bond value on the impurity position inside the graphene sample is found, which is due to quantum size effects. The influence of the flake size on the value of the indirect interaction constant is also studied.
Despite the enormous interest in the properties of graphene and the potential of graphene nanostructures in electronic applications, the study of quantum confined states in atomically well-defined graphene nanostructures remains an experimental challenge. Here, we study graphene quantum dots (GQDs) with well-defined edges in the zigzag direction, grown by chemical vapor deposition (CVD) on an iridium(111) substrate, by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). We measure the atomic structure and local density of states (LDOS) of individual GQDs as a function o…
We theoretically show that spontaneously interlayer-coherent bilayer quantum Hall droplets should allow robust and fault-tolerant pseudospin quantum computation in semiconductor nanostructures with voltage-tuned external gates providing qubit control and a quantum Ising Hamiltonian providing qubit entanglement. Using a spin-boson model we estimate decoherence to be small $(\sim 10^{-5})$.
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We calculate the optical properties of atomic-sized core-shell graphene - boron nitride nanoflakes with triangular shaped crossection using the density functional theory. The optical properties can be tuned by using different sizes and proportions of the core-shell materials. Anisotropic effects manifested in the absorption of unpolarized light with different orientations of the optical vector are pointed out.
Using the Büttiker-Landauer formulation of transport theory in the linear response regime, the valley currents and non-local resistances of bilayer graphene nanostructures with broken inversion symmetry are calculated. It is shown that broken inversion symmetry in bilayer graphene nanostructures leads to striking enhancement of the non-local 4-terminal resistance and to valley currents several times stronger than the conventional electric current when the Fermi energy is in the spectral gap close to the energy of Dirac point. The scaling relation between local and non-local resistances is inve…
We report on the design of loop-gap resonators (LGR) operating in the frequency range 34-36 GHz with the goal to achieve single electron spin resonance (ESR) in quantum dot nanostructures. We present a comprehensive study of the magnetic field strength and the spatial distribution of the electric and magnetic fields in the resonator by means of experiments and numerical simulations.
We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low and high carrier densities, we show that the transport of single-layer nanoribbons lies in a strong localization regime, which can be attributed to an edge effect. We find that this edge effect can be weakened by enlarging the width, decreasing the carrier densities or adding an extra layer. From graphene nanoribbon to graphene sheet, the data show a dimensional crossover…
Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time, the crucial damping channels of graphene plasmons via its intrinsic optical phonons and scattering from the edges. A plasmon lifetime of 20 femto-seconds and smaller is observed, when damping throug…
I. Introduction (Preface, Basic properties of semiconductor nanostructures). II. Theory of Coulomb-blockade oscillations (Periodicity of the oscillations, Amplitude and lineshape). III. Experiments on Coulomb-blockade oscillations (Quantum dots, Disordered quantum wires, Relation to earlier work on disordered quantum wires). IV. Quantum Hall effect regime (The Aharonov-Bohm effect in a quantum dot, Coulomb blockade of the Aharonov-Bohm effect, Experiments on quantum dots, Experiments on disordered quantum wires).
Strongly nonlinear transport through Diluted Magnetic Semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb and exchange interaction. Nonlinear effects include the appearance of spin polarized stationary states and self-sustained current oscillations as possible stable states of the nanostructure, depending on its configuration and control parameters such as voltage bias and level splitting due to an external magnetic field. Oscillatory regions grow in size with well number and level splitting. A systematic analysis of the charge and spin response to voltage…
I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and De…
We study the effect of contact hyperfine interaction on the nuclear spin diffusion coefficients in semiconductor quantum dots. The diffusion coefficients are calculated with both the method of moment and density matrix. We show that nuclear spin diffusion is strongly suppressed by the nonuniform hyperfine coupling resulting from the confined electron wavefunction. Our results agree with the observed suppression of nuclear spin diffusion in these structures in recent experiments, and clarify the degree of validity of the method of moment in an inhomogeneous system.
Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to the microscale. We propose here to overcome this problem by making nanostructures in suspended epitaxial bilayer graphene on a large scale and with a large variety of geometries. We also demonstrate a new hybrid thin film of SiC-graphene with an impressive robustness. Since the mechanics and thermal dissipation of a suspended graphene membrane are strongly rel…
Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures is highly unexplored. Here we study the spin injection and relaxation in nanostructured graphene with dimensions smaller than the spin relaxation length. For graphene nanoislands, where the edge length…