Strongly nonlinear transport through Diluted Magnetic Semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb and exchange interaction. Nonlinear effects include the appearance of spin polarized stationary states and self-sustained current oscillations as possible stable states of the nanostructure, depending on its configuration and control parameters such as voltage bias and level splitting due to an external magnetic field. Oscillatory regions grow in size with well number and level splitting. A systematic analysis of the charge and spin response to voltage and magnetic field switching of II-VI Diluted Magnetic Semiconductor multiquantum wells is carried out. The description of stationary and time-periodic spin polarized states, the transitions between them and the responses to voltage or magnetic field switching have great importance due to the potential implementation of spintronic devices based on these nanostructures.
We reply to the comment cond-mat/0008098 by Yang, Sun, and Chang on our paper "Theory of Diluted Magnetic Semiconductor Ferromagnetism", Phys. Rev. Lett. 84, 5628 (2000).
We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the DMS quantum dots and the itinerant holes in the semiconductor valence band makes hole transfer between quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the DMS quantum dots and in the semiconducto…
Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-bandgap laser radiation . The mechanism for photo-induced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T_C depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1 K.
The non-Markovian effects in the spin dynamics in diluted magnetic semiconductors found in quantum kinetic calculations can be reproduced very well by a much simpler effective single electron theory, if a finite memory is accounted for. The resulting integro-differential equation can be solved by a differential transform method, yielding the Taylor series of the solution. From the comparison of both theories it can be concluded that the non-Markovian effects are due to the spectral proximity of the excited electrons to the band edge.
We revisit the non-collinear exchange coupling across the trilayer magnetic junction mediated by the diluted-magnetic-semiconductor thin film. By numerical approaches, we investigate the spiral angle between the ferromagnetic layers extensively in the parameter space. In contrast to previous study, we discovered the important role of spin relaxation, which tends to favor spiral exchange over the oscillatory Ruderman-Kittel-Kasuya-Yosida interaction. Finally, we discuss the physics origins of these two types of magnetic interactions.
Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances drastically the conversion due to the spin-dependent scattering by localized Mn(2+) ions and the giant Zeeman splitting.
The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction is highly spin-dependent even if the spin polarization of the carrier population is negligibly small. It turns out that this spin-polarized Fermi velocity alone can lead to a strong spin polarization of the current, which is still robust against the energy broadening effect induced by the impurity scattering.
In this comment, we emphasize that the self-consistent spin wave theory in a recent paper [J. K"onig, H.-H. Lin, and A. H. MacDonald, Phys. Rev. Lett. 84, 5628 (2000)] leads to incorrect results both at low temperatures and near T_c. Thus we suggest another self-consistent spin wave approximation to remedy these flaws.
We explore the impact of a Rashba-type spin-orbit interaction in the conduction band on the spin dynamics of hot excitons in diluted magnetic semiconductor quantum wells. In materials with strong spin-orbit coupling, we identify parameter regimes where spin-orbit effects greatly accelerate the spin decay and even change the dynamics qualitatively in the form of damped oscillations. Furthermore, we show that the application of a small external magnetic field can be used to either mitigate the influence of spin-orbit coupling or entirely remove its effects for fields above a material-dependent t…
We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second order many-particle expansion of the exact p-d exchange interaction, our approach goes beyond the usual mean-field approximation. It includes both the sub-picosecond demagnetization dynamics and the slower relaxation processes which restore the initial ferromagnetic order in a nanosecond time scale. In agreement with experimental results, our numerical simulations …
We present a mean field theory of ferromagnetism in diluted magnetic semiconductor quantum wells. When subband mixing due to exchange interactions between quantum well free carriers and magnetic impurities is neglected, analytic result can be obtained for the dependence of the critical temperature and the spontaneous magnetization on the distribution of magnetic impurities and the quantum well width. The validity of this approximate theory has been tested by comparing its predictions with those from numerical self-consistent field calculations. Interactions among free carriers, accounted for u…
A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.
Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-Büttiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4x4 kp model [Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetiz…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and deformation potential is included. The resulting spin lifetime is typically on the order of microseconds. The effectiveness of the phonon-mediated spin-flip mechanism increases with increasing Mn concentration, electron spin splitting, vertical confining strength and lateral diameter, while it shows non-monotonic dependence on the magnetic field and temperature…
Phonons are well known to be the main mechanism for the coupling between bright and dark excitons in nonmagnetic semiconductors. Here, we investigate diluted magnetic semiconductors where this process is in direct competition with the scattering at localized magnetic impurities. To this end, a recently developed quantum kinetic description of the exciton spin dynamics in diluted magnetic semiconductor quantum wells is extended by the scattering with longitudinal acoustic phonons. A strong phonon impact is found in the redistribution of exciton momenta on the exciton parabola that becomes espec…
We report on a study of the temperature-dependence of current-induced effective magnetic fields due to spin-orbit interactions in the diluted ferromagnetic semiconductor (Ga,Mn)As. Contributions from the effective fields as well as from the anomalous Nernst effect are evident in the difference between transverse resistance measurements as a function of an external magnetic field for opposite orientations of the applied current. We separately extract these contributions by fitting to a model of coherently rotating magnetization. The component of the effective field with Dresselhaus symmetry is …
In this letter we develop the theory of Hall effect driven by non-collinear magnetic textures (topological Hall effect - THE) in diluted magnetic semiconductors (DMS). We show that a carrier spin-orbit interaction induces a chiral magnetic ordering inside a bound magnetic polaron (BMP). The inner structure of non-collinear BMP is controlled by the type of spin-orbit coupling, allowing to create skyrmion- (Rashba) or antiskyrmion-like (Dresselhaus) configurations. The asymmetric scattering of itinerant carriers on polarons leads to the Hall signal which exists in weak external magnetic fields a…
We investigate the possibility of charge carrier localization in magnetic semiconductors due to the presence of a highly inhomogeneous external magnetic field. As an example, we study in detail the properties of a magnetic semiconductor-permalloy disk hybrid system. We find that the giant Zeeman respose of the magnetic semiconductor in conjuction with the highly non-uniform magnetic field created by the vortex state of a permalloy disk can lead to Zeeman localized states at the interface of the two materials. These trapped state are chiral, with chirality controlled by the orientation of the c…
We study spin transport of holes through stubless or stubbed waveguides modulated periodically by diluted magnetic semiconductor (DMS) sections of width b1 . Injected holes of up (down) spin feel a periodically modulated barrier (well) potential in the DMS sections and have different transmission (T) coefficients. T oscillates with b1 for spin-down and decreases fast for spin-up holes while the relative polarization Pr depends nearly periodically on the stub height. Using asymmetric stubs leads to a nearly square-wave pattern in T and to wide plateaus in Pr . T oscillates with the length betwe…
Magnetically doped semiconductors are well known for their giant Zeeman splittings which can reach several meV even in relatively small external magnetic fields. After preparing a nonequilibrium exciton distribution via optical excitation, the spin dynamics in diluted magnetic semiconductor quantum wells is typically governed by spin-flip scattering processes due to the exciton-impurity exchange interaction. Our theoretical calculations show that the giant Zeeman splitting in these materials in combination with the influence of longitudinal acoustic phonons lead to a quantum ratchet-type dynam…
The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7x10^(-8) cm^2/s has been evaluated for Zn(0.99)Mn(0.01)Se from comparison of experimental and numerical results. Calculations of the giant Zeeman splitting of the exciton states and the magnetization dynamics in the o…
Diluted magnetic semiconductors are materials well known to exhibit strong correlations which typically manifest in carrier-mediated magnetic ordering. In this Rapid Communication, we show that the interaction between excitons and magnetic impurities in these materials is even strong enough to cause a significant deviation from the bare exciton picture in linear absorption spectra of quantum well nanostructures. It is found that exciton-impurity correlations induce a characteristic fingerprint in the form of an additional feature close to the exciton resonance in combination with a shift of th…
The phase diagram of diluted magnetic semiconductor quantum wells is investigated. The interaction between the carriers in the hole gas can lead to first order ferromagnetic transitions, which remain abrupt in applied fields. These transitions can be induced by magnetic fields or, in double-layer systems by electric fields. We make a number of precise experimental predictions for observing these first order phase transitions.
We theoretically investigate the impact of excited states on the dynamics of the exciton ground state in diluted magnetic semiconductor quantum wells. Exploiting the giant Zeeman shift in these materials, an external magnetic field is used to bring transitions between the exciton ground state and excited states close to resonance. It turns out that, when treating the exciton dynamics in terms of a quantum kinetic theory beyond the Markov approximation, higher exciton states are populated already well below the critical magnetic field required to bring the exciton ground state in resonance to a…
We report on experimental evidence of the Berry phase accumulated by the charge carrier wave function in single-domain nanowires made from a (Ga,Mn)(As,P) diluted ferromagnetic semiconductor layer. Its signature on the mesoscopic transport measurements is revealed as unusual patterns in the magnetoconductance, that are clearly distinguished from the universal conductance fluctuations. We show that these patterns appear in a magnetic field region where the magnetization rotates coherently and are related to a change in the band-structure Berry phase as the magnetization direction changes. They …
Optical spectroscopy and quantum control of semiconductor quantum dots has become a vivid field of research. The recent progress in both theory and experiment is reviewed, with emphasis on theoretical and computational concepts.
Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS ferromagnetism in systems with semiconductor heterojunctions. We focus on the mechanism that cause magnetic and magnetoresistive properties to depend on doping profiles, defect distributions, gate voltage, and other system parameters that can in principle be engineered to yield desired results.
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
The effects of carrier-impurity correlations due to a Kondo-like spin-spin interaction in diluted magnetic semiconductors are investigated. These correlations are not only responsible for a transfer of spins between the carriers and the impurities, but also produce non-perturbative effects in the spin dynamics such as renormalization of the precession frequency of the carrier spins, which can reach values of several percent in CdMnTe quantum wells. In two-dimensional systems, the precession frequency renormalization for a single electron spin with defined wave vector shows logarithmic divergen…
We review experimental and theoretical results on thermal transport in semiconductor nanostructures (multilayer thin films, core/shell and segmented nanowires), single- and few-layer graphene, hexagonal boron nitride, molybdenum disulfide and black phosphorus. Different possibilities of phonon engineering for optimization of electrical and heat conductions are discussed. The role of the phonon energy spectra modification on the thermal conductivity in semiconductor nanostructures is revealed. The dependence of thermal conductivity in graphene and related two-dimensional (2D) materials on tempe…
We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dep…
It is well-known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductor (DMS) like Ga$_{1-x}$Mn$_x$As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that even with a constant hole density, large changes in the magnetization can be obtained with a relatively small imbalance in the quasi-Fermi levels for up-spin and down-spin electrons. We show, by coupling mean field theory of diluted magnetic semiconductor ferromagnetism with master equations governing the Mn spin-dynamics, that a mere splitting of the up-spi…
Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier-dopant interaction is treated according to Fermi's golden rule, which involves the as…
We present a theory of collective spin excitations in diluted-magnetic-semiconductor quantum wells in which local magnetic moments are coupled via a quasi-two-dimensional gas of electrons or holes. In the case of a ferromagnetic state with partly spin-polarized electrons, we find that the Goldstone collective mode has anomalous $k^4$ dispersion and that for symmetric quantum wells odd parity modes do not disperse at all. We discuss the gap in the collective excitation spectrum which appears when spin-orbit interactions are included.
We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory and we report here : (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.
We study the properties of heterostructures formed by two layers of diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscilles between ferromagnetic and antiferromagnetic as a function of the different parameters in the problem. The different transport properties of these phases make that this heterostructure presents strong magnetoresistive effects. The coupling can be also modified by an electric field. We propose that it is possible to alter dramatically the electrical resistanc…
Alloy disorder in II-VI diluted magnetic semiconductors (DMS) is typically reduced when the local magnetic spins align in an applied magnetic field. An important and untested expectation of current models of alloy disorder, however, is that alloy fluctuations in many DMS compounds should increase again in very large magnetic fields of order 100 tesla. Here we measure the disorder potential in a Zn$_{.70}$Cd$_{.22}$Mn$_{.08}$Se quantum well via the low temperature photoluminescence linewidth, using a new magnet system to 89 T. Above 70 T, the linewidth is observed to increase again, in accord w…
The magnetic circular dichroism of III-V diluted magnetic semiconductors, calculated within a theoretical framework suitable for highly disordered materials, is shown to be dominated by optical transitions between the bulk bands and an impurity band formed from magnetic dopant states. The theoretical framework incorporates real-space Green's functions to properly incorporate spatial correlations in the disordered conduction band and valence band electronic structure, and includes extended and localized electronic states on an equal basis. Our findings reconcile unusual trends in the experiment…
In this paper we review the latest achievements of density functional theory in understanding the physics of diluted magnetic semiconductors. We focus on transition metal doped III-V semiconductors, which show spontaneous ferromagnetic order at relatively high temperature and good structural compatibility with existing III-V devices. We show that density functional theory is a very powerful tool for i) studying the effects of local doping defects and disorder on the magnetic properties of these materials, ii) predicting properties of new materials and iii) providing parameters, often not acces…
This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II-VI and III-V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating) regime, although we believe that some of the unusual features of the magnetization curves should qualitatively be present at larger dopings (metallic regime) as well. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature th…
We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also foun…
The electronic structure of diluted magnetic semiconductors is studied, especially focusing on the hole character. The Haldane-Anderson model is extend to a magnetic impurity, and is analyzed in the Hartree-Fock approximation. Due to the strong hybridization of an impurity d-states with host p-states, it is shown that holes are created in the valence band, at the same time the localized magnetic moments are formed. These holes are weakly bound around the impurity site with the characteristic length of several lattice constants. For the case of the two impurities, it is found that when the sepa…
A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.
The effects of random distribution of magnetic impurities with concentration $x$ in a semiconductor alloy multilayer at a paramagnetic temperature are investigated by means of coherent potential approximation and tight-binding model. The change in the electronic states and the optical absorption spectrum with $x$ is calculated for weak and strong exchange interactions between carrier spins and localized spin moments on magnetic ions. We find that the density of states and optical absorption are strongly layer-dependent due to the quantum size effects. The electronic and optical spectra are bro…
We theoretically show that spontaneously interlayer-coherent bilayer quantum Hall droplets should allow robust and fault-tolerant pseudospin quantum computation in semiconductor nanostructures with voltage-tuned external gates providing qubit control and a quantum Ising Hamiltonian providing qubit entanglement. Using a spin-boson model we estimate decoherence to be small $(\sim 10^{-5})$.
