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arXiv 1506.04044cond-mat.mes-hall
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稀磁半导体能带结构Berry相的直接探测

Direct probing of band-structure Berry phase in diluted magnetic semiconductors

M. Granada, D. Lucot, R. Giraud, A. Lemaître, C. Ulysse, X. Waintal, G. Faini

摘要:

我们报告的实验证据的Berry相积累的载流子波函数在单畴纳米线(Ga,Mn)(As,P)稀释铁磁半导体层。它的签名介观输运测量显示为不寻常的模式,在磁导,这是明确区分于普遍的电导波动。我们发现,这些图案出现在磁场区域中的磁化旋转相干,并与能带结构贝里相位的变化,作为磁化方向的变化。因此,它们应被视为动量空间中有效磁单极子的能带结构Berry相位指纹。我们认为,这是一种有效的方法,改变能带结构在一个控制的方式,并直接探测它。因此,(Ga,Mn)As似乎是一个非常有趣的测试台,新概念的基础上,这个几何相位。

英文摘要:

We report on experimental evidence of the Berry phase accumulated by the charge carrier wave function in single-domain nanowires made from a (Ga,Mn)(As,P) diluted ferromagnetic semiconductor layer. Its signature on the mesoscopic transport measurements is revealed as unusual patterns in the magnetoconductance, that are clearly distinguished from the universal conductance fluctuations. We show that these patterns appear in a magnetic field region where the magnetization rotates coherently and are related to a change in the band-structure Berry phase as the magnetization direction changes. They should be thus considered as a band structure Berry phase fingerprint of the effective magnetic monopoles in the momentum space. We argue that this is an efficient method to vary the band structure in a controlled way and to probe it directly. Hence, (Ga,Mn)As appears to be a very interesting test bench for new concepts based on this geometrical phase.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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