Magnetic quantum oscillations (MQOs) have been widely used as a tool for probing Fermi surfaces. The shape and topology of the Fermi surface and the related physical parameters, such as the cyclotron mass and relaxation time, can be verified by carefully analyzing the frequency, amplitude, and phase of MQOs. In particular, phase analysis, from which we can obtain the Berry phase, has received much attention with the growing interest in the topology of condensed matter physics. Here, beyond the conventional uses of MQOs, we show that MQOs can be used to determine the Fermi surface magnetization. We doped dilute magnetic element Fe into the Dirac semimetal NbSb$_2$ to only introduce magnetism without changing the shape of the Fermi surface. We observed a phase shift in magnetically doped Fe-NbSb$_2$, which is in contrast to the lack of a phase shift in pristine NbSb$_2$ and nonmagnetic Bi-doped NbSb$_2$, indicating the strong exchange interaction between doped magnetic impurities and Fermi surface electrons. We estimated the Fermi surface magnetization introduced by magnetic Fe doping from the phase shift. This work demonstrates not only how tiny magnetic impurities can significantly change the Fermi surface magnetization but also how the Fermi surface magnetization can be investigated by phase analysis of MQOs.
Comparison between a quantum kinetic theory of spin transfer dynamics in Mn doped bulk semiconductors and its Markov limit for non-zero Mn magnetization
Anomalous and Topological Hall effect in Cu doped Sb2Te3 Topological Insulator
在不同温度和不同磁场下对Sb_（1.90）Cu_（0.10）Te_3的磁输运和磁化强度进行了测量。在高场下的磁输运测量表明体态和表面态共存。磁化强度显示了Cu掺杂诱导的反铁磁有序，观察到的量子振荡表明，在Sb 1.90 Cu 0.10 Te 3的磁化强度是体属性。霍尔数据的非线性表明存在反常和拓扑霍尔效应。根据Cu掺杂Sb_2Te_3拓扑绝缘体的霍尔测量数据，对反常和拓扑霍尔效应（THE）进行了评价.
Single-pulse strain-induced precessional dynamics of magnetization in Co-doped iron garnet
HFML-FELIX；Radboud University, Institute for Molecules and Materials（拉德堡德大学分子与材料研究所）；Russian Quantum Center, Skolkovo Innovation Center（俄罗斯量子中心斯科尔科沃创新中心）；Faculty of Physics, Lomonosov Moscow State University（莫斯科国立大学物理系）；Faculty of Physics, University of Bialytsok（比亚韦斯托克大学物理系）
Transport in Selectively Magnetically Doped Topological Insulator Wires
我们研究了拓扑绝缘体纳米线的电子和输运性质，包括其表面的选择性磁性掺杂。我们使用一个模型，这是适当的描述材料，如Bi $_2$ Se $_3$内的k.p近似，并考虑纳米线的矩形几何形状。在这个模型中，（111）表面的磁性掺杂诱导了塞曼场，塞曼场在狄拉克锥处打开了与表面态相对应的间隙。为了获得在两个终端配置的输运性质，我们使用递归格林函数方法的紧束缚模型的基础上，这是通过离散原始的连续模型。对于两个相对的纳米线（111）表面的均匀磁化的情况，我们表明电导可以从$e^2/h$的量化值（当磁化相等时）切换到非常小的值（当它们相反时）。我们还分析了非均匀磁化的情况下，在两个相对的表面上的塞曼场改变符号在中间的线。对于这种情况下，我们发现，通过共振隧穿通过手性状态绑定在中间的线的传导是可能的。谐振能级位置可以通过施加穿过纳米线截面的Aharonov-Bohm通量来调谐。
Carrier Density and Thickness Dependent Proximity Effect in Doped Topological Insulator -- Metallic Ferromagnet Bilayers
利用磁导率研究了磁邻近效应对掺杂拓扑绝缘体表面态的影响。我们的双层由一层Fe $_7$ Se $_8$，这是一种金属亚铁磁体和一层Bi $_{0.8}$ Sb $_{1.2}$ Te $_{3}$，这是一种高度空穴掺杂的拓扑绝缘体。利用输运测量和修改后的Hikami-Larkin-Nagaoka模型，我们表明，铁磁体显着缩短表面态的有效相干长度，这表明在狄拉克点处打开了一个间隙。我们表明，磁感应间隙持续的表面状态，从磁铁分开的拓扑绝缘体层厚为170 [nm]。此外，发现间隙的大小与我们从反常霍尔效应中提取的磁化强度成正比。我们的结果给出了拓扑绝缘体/铁磁体双层膜中载流子密度、感生磁化强度和磁感应能隙之间的关系。这些信息对于拓扑绝缘体中磁相互作用的理论理解和这种双层的实际制造都是重要的，这是各种建议技术的基础，如自旋电子器件，远红外探测器等。
