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arXiv 1409.6552cond-mat.str-el
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近藤半导体CeM2Al10(M = Ru,Os,Fe)价态和组态相互作用参数的体敏硬X射线光电子能谱学定量研究

Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron spectroscopy

F. Strigari, M. Sundermann, Y. Muro, K. Yutani, T. Takabatake, K. -D. Tsuei, Y. F. Liao, A. Tanaka, P. Thalmeier, M. W. Haverkort, L. H. Tjeng, A. Severing

摘要:

用体敏硬X射线光电子能谱学(HAXPES)在Ce 3d芯能级上定量测定了近藤半导体CeM 2Al 10(M = Ru,Os和Fe)中4f^n贡献的占位率.结合配置相互作用计划与完整的多重计算允许准确地描述HAXPES数据,尽管存在强等离子体激元激发的光谱。从这种分析中获得的配置相互作用参数-特别是杂化强度V_eff和有效f结合能Δ_f -表明CeOs 2Al 10中的交换相互作用略强于CeRu 2Al 10,并且CeFe 2Al 10中的交换相互作用显著增加。这验证了大量的近藤屏蔽与磁序共存,并将整个CeM 2Al 10家族置于强交换相互作用区域。

英文摘要:

The occupancy of the 4f^n contributions in the Kondo semiconductors CeM2Al10(M = Ru, Os and Fe) has been quantitatively determined by means of bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) on the Ce 3d core levels. Combining a configuration interaction scheme with full multiplet calculations allowed to accurately describe the HAXPES data despite the presence of strong plasmon excitations in the spectra. The configuration interaction parameters obtained from this analysis -- in particular the hybridization strength V_eff and the effective f binding energy Delta_f -- indicate a slightly stronger exchange interaction in CeOs2Al10 compared to CeRu2Al10, and a significant increase in CeFe2Al10. This verifies the coexistence of a substantial amount of Kondo screening with magnetic order and places the entire CeM2Al10 family in the region of strong exchange interactions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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