arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1106.3449cond-mat.str-el
收藏

近藤半导体SmB6的动量相关杂化带隙和色散带隙态

Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6

Hidetoshi Miyazaki, Tetsuya Hajiri, Takahiro Ito, Satoru Kunii, Shin-ichi Kimura

摘要:

本文报道了近藤半导体SmB $_6$的三维角分辨光电子能谱。我们发现在X和$Γ$点的峰的温度依赖性的差异,由于Sm的5d导带和近本地化的Sm 4f状态之间的杂交。X点的峰强度在120 K以下与价态跃迁的温度关系相同,而$Γ$点的峰强度在30 K以下与Q=(0.5,0.5,0.5)的磁激发相一致.这表明具有价态跃迁的杂化主要发生在X点,磁激发的初始状态位于$Γ$点。

英文摘要:

We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Γ$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $Γ$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $Γ$ point.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑