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arXiv 1409.4181astro-ph.GA
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在大质量恒星形成的最早阶段来自致密激波的SiO激发

SiO excitation from dense shocks in the earliest stages of massive star formation

S. Leurini, C. Codella, A. López-Sepulcre, A. Gusdorf, T. Csengeri, S. Anderl

摘要:

分子外流是吸积的直接结果,因此它们代表了对高质量恒星形成早期阶段仍然知之甚少的吸积过程的最佳示踪剂之一。以前的研究表明,SiO丰度随着大质量年轻恒星天体的演化而减少,这可能是因为喷流活动的衰减,正如在低质量恒星形成区所看到的那样。利用APEX望远镜观测了年轻大质量天体的SiO(8-7)和CO(4-3)谱线,研究了它们的激发条件及其在流出流中的丰度。通过非LTE分析,我们发现SiO的激发条件随着发射气体的速度而增加。我们还通过在高速下的SiO和CO积分强度计算了SiO的丰度。在我们的样品中的源,我们发现没有显着的变化的SiO丰度与演化的辐射热光度质量比之间的4和50 $L_\odot/M_\odot$。我们还发现SiO(8-7)的光度随辐射热光度质量比的增加而增加。我们推测,这可能是由于SiO示踪的气体密度增加。我们发现,由SiO观测约束的密度需要使用的冲击模型,其中包括颗粒-颗粒处理。第一次,这样的模型进行了比较,发现是兼容的SiO观测。从这些比较中可以全面推断出冲击前的密度为$10^5\, $ cm $^{-3}$。在我们的样本中的SiO观察到相应的速度色散的对象调用的速度高于25公里秒$^{-1}$的冲击。我们的冲击模型与观测结果的比较表明,溅射的含硅材料(对应于小于10%的总硅丰度)从晶粒地幔发生。

英文摘要:

Molecular outflows are a direct consequence of accretion, and therefore they represent one of the best tracers of accretion processes in the still poorly understood early phases of high-mass star formation. Previous studies suggested that the SiO abundance decreases with the evolution of a massive young stellar object probably because of a decay of jet activity, as witnessed in low-mass star-forming regions. We investigate the SiO excitation conditions and its abundance in outflows from a sample of massive young stellar objects through observations of the SiO(8-7) and CO(4-3) lines with the APEX telescope. Through a non-LTE analysis, we find that the excitation conditions of SiO increase with the velocity of the emitting gas. We also compute the SiO abundance through the SiO and CO integrated intensities at high velocities. For the sources in our sample we find no significant variation of the SiO abundance with evolution for a bolometric luminosity-to-mass ratio of between 4 and 50 $L_\odot/M_\odot$. We also find a weak increase of the SiO(8-7) luminosity with the bolometric luminosity-to-mass ratio. We speculate that this might be explained with an increase of density in the gas traced by SiO. We find that the densities constrained by the SiO observations require the use of shock models that include grain-grain processing. For the first time, such models are compared and found to be compatible with SiO observations. A pre-shock density of $10^5\, $cm$^{-3}$ is globally inferred from these comparisons. Shocks with a velocity higher than 25 km s$^{-1}$ are invoked for the objects in our sample where the SiO is observed with a corresponding velocity dispersion. Our comparison of shock models with observations suggests that sputtering of silicon-bearing material (corresponding to less than 10% of the total silicon abundance) from the grain mantles is occurring.

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