基于少层MoS2的可调谐电荷陷阱存储器
Tunable charge-trap memory based on few-layer MoS2
摘要：
具有高\k介电材料的电荷陷阱存储器被认为是下一代存储器件的有希望的候选者。石墨烯、二硫化钼等超薄层状二维材料因其新颖的物理性质和在电子器件中的潜在应用而受到广泛关注。在这里，我们报告的双栅电荷陷阱存储器件组成的几层二硫化钼沟道和三维（3D）的Al 2 O3/HfO 2/Al 2 O3电荷陷阱栅堆叠。由于HfO 2中电子和空穴的非凡捕获能力，MoS 2存储器件表现出前所未有的超过20 V的存储窗口。更重要的是，背栅的窗口大小可以有效地从15.6 V调整到21 V;编程/擦除电流比可以达到104，远远超过Si基闪存，这允许多位信息存储。此外，该器件显示出170 cm 2 V-1 s-1的高迁移率，数百次循环的良好耐久性和10年后约28%的电荷损失的稳定保留，这大大低于以往报道的MoS 2闪存。二维材料与传统的高\k电荷陷阱栅极叠层的组合开辟了新颖的非易失性存储器器件的令人兴奋的领域。
英文摘要：
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their novel physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. More importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 104, far beyond Si-based flash memory, which allows for multi-bit information storage. Furthermore, the device shows a high mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable retention of ~28% charge loss after 10 years which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-\k charge-trap gate stacks opens up an exciting field of novel nonvolatile memory devices.
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