无隧穿和阻挡层的低温（< 200°C）溶液处理的可调闪存器件
Low temperature (< 200°C) solution processed tunable flash memory device without tunneling and blocking layer
摘要：
本征电荷陷阱电容性非易失性闪存在当今的半导体电子市场上占有相当大的份额。在没有高温处理步骤的情况下在电介质层中产生本征陷阱是一个挑战。虽然由聚合物制造的低温处理的存储器器件已被证明是替代品，但它们的性能在几个操作周期后迅速下降。此外，常规存储器装置需要隧穿和阻挡层的支撑，因为存储器电介质或聚合物不能防止存储器泄漏。设计存储器件的主要问题是同时优化漏电流和本征陷阱密度。在这里，我们报道了一种没有隧穿和阻挡层的可调闪存器件，其通过在溶液衍生的无机自旋$-$涂覆的电介质膜中将高本征电荷陷阱（$>$ 10 $^{12}$ cm $^{-2}$）的发现与低漏电流（$<$ 10 $^{-7}$ A.cm $^{-2}$）结合在一起来实现，所述电介质膜在200 $^\circ$ C或更低温度下加热。此外，存储器存储系统调谐高达96%，通过控制陷阱密度与加热温度的增加。
英文摘要：
Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is a challenge to create intrinsic traps in the dielectric layer without high temperature processing steps. While low temperature processed memory devices fabricated from polymers have been demonstrated as an alternative, their performance degrade rapidly after a few cycles of operation. Moreover conventional memory devices need the support of tunneling and blocking layers since the memory dielectric or polymer is incapable of preventing memory leakage. The main issue in designing a memory device is to optimize the leakage current and intrinsic trap density simultaneously. Here we report a tunable flash memory device without tunneling and blocking layer by combining the discovery of high intrinsic charge traps ($>$10$^{12}$ cm$^{-2}$) together with low leakage current($<$10$^{-7}$ A.cm$^{-2}$) in solution derived, inorganic, spin$-$coated dielectric films which were heated at 200$^\circ$C or below. In addition, the memory storage is tuned systematically upto 96% by controlling the trap density with increasing heating temperature.
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