We demonstrate the first active optical isolator and circulator implemented in a linear and reciprocal material platform using commercial Mach-Zehnder modulators. In a proof-of-principle experiment based on single-mode polarization-maintaining fibers, we achieve more than 12.5 dB isolation over an unprecedented 8.7 THz bandwidth at telecommunication wavelengths, with only 9.1 dB total insertion loss. Our architecture provides a practical answer to the challenge of non-reciprocal light routing in photonic integrated circuits.
The performance of a dual parallel differential Mach-Zehnder modulator broadband linearization architecture is analysed. This study provides experimental and analytical results showing an enhancement up to 20 dB in the 3rd-order intermodulation distortion factor at 5 GHz using RF and optical asymmetrical feeding factors.
We derive equations that quantify silicon Mach-Zehnder Interferometer (MZI) modulator impact upon optical link budget for NRZ transmissions based solely upon modulator extinction ratio (ER), the efficiency-loss figure of merit (FOM), and peak-to-peak drive voltage (Vpp). Our modulator link penalty equations transform the modulator efficiency-loss FOM from a simple device quality metric into a means of predicting how design and technology choices impact system margin. Our results indicate that, with a 17.8 V-cm FOM and 1 Vpp drive, designing an MZI to have an ER anywhere within the large range …
Here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometeric modulator, exhibiting a miniscule VpL of 95 V-um, deploying a sub-wavelength short electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics.
This paper describes the development of a photonic local oscillator (LO) source based on a 3-stage Mach-Zehnder modulator (MZM) device. The MZM laser synthesizer demonstrates the feasibility of providing the photonic reference LO for the Atacama Large Millimeter Array telescope located in Chile. This MZM approach to generating an LO by radio RF modulation of a monochromatic optical source provides the merits of wide frequency coverage of 4-130 GHz, tuning speed of about 0.2 seconds, and residual integrated phase noise performance of 0.3 degrees RMS at 100 GHz.
An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require etching or patterning of TFLN. The push-pull MZM achieves a half-wave voltage length product ($V_πL$) of 0.8 V$.$cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm modulation length show a broadband electro-optic response with a 3 dB bandwidth beyond 100 GHz, with the latter showing a bandwidth to half-wave voltage ratio of 100 GHz/V.
We utilize various techniques to characterize the residual phase modulation of a fiber-based Mach-Zehnder electro-optical intensity modulator. A heterodyne technique is used to directly measure the phase change due to a given change in intensity, thereby determining the chirp parameter of the device. This chirp parameter is also measured by examining the ratio of sidebands for sinusoidal amplitude modulation. Finally, the frequency chirp caused by an intensity pulse on the nanosecond time scale is measured via the heterodyne signal. We show that this chirp can be largely compensated with a sep…
We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω matched linear traveling wave modulator with comparable phase shifter technology, drive voltage and output optical modulation amplitude. Passive biasing of the Mach-Zehnder interferometer is further impl…
A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the weak plasma dispersion effect in Si. Therefore, it is essential to find a novel modulation scheme that is compatible with a Si photonics platform. Here, we demonstrate an InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) optical modulator with a Mach-Zehnder interferometer (MZI) formed by direct wafer bonding with an Al2O3 bonding interface. Electron accumul…
Photonic integrated circuits (PICs) are the foundation of on-chip optical technologies. Mach-Zehnder modulators are appealing building blocks of PICs which mostly rely on weak and volatile optical effects in materials. In contrast, phase change materials such as GSST are promising candidates to realize efficient and nonvolatile reconfigurable optical devices. However, the phase transitions of PCMs are accompanied by large changes in the imaginary parts of their refractive indices which make the design of MZMs challenging. In this paper, two interesting design methods named as loss-balancing an…
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a single silicon lithography step and a single bonding step, we realize MZ EOM devices which cover both wavelength ranges on the same chip. The EOM devices achieve 100 GHz EO bandwidth (referenced to 1 GHz) and about 2-3 V…
Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) …
Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be fabricated using wafer-scale technology compatible with the semiconductor industry, such devices do not exceed an electrical 3-dB bandwidth of about 50 GHz, whereas many applications require higher R…
Quantum Scattering Model of Dual Parallel Mach Zehnder Electro Optic Modulators: General Formalism, Impairments, and Applications to Frequency-Bin Photonic Quantum States
Universitat Politècnica de València（瓦伦西亚理工大学）；Universidad Miguel Hernández de Elche（埃尔切米格尔·埃尔南德斯大学）；Universidad de Vigo（维戈大学）
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in th…
The present work demonstrates an electro-optic polymer based Mach-Zehnder (MZ) modulator fabricated utilizing advanced ultraviolet (UV) imprinting and aligned ink-jet printing technologies for patterning and layer deposition. The bottom electrode layer is designed and directly ink-jet printed on the substrate to form the patterned layer. The waveguide structure is formed into a bottom cladding polymer using a transparent flexible mold based UV imprinting method. All other layers can be ink-jet printed. The top electrode is aligned and printed over the Mach-Zehnder arm. The modulator demonstrat…
Broadband suspended lithium tantalate Mach-Zehnder modulator achieving a 460 Gbit/s net data rate
Institute of Physics, Swiss Federal Institute of Technology, Lausanne (EPFL)（洛桑联邦理工学院物理研究所）；Institute of Electrical and Micro Engineering (IEM), EPFL（洛桑联邦理工学院电气与微工程学院）；Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)（卡尔斯鲁厄理工学院光子与量子电子研究所）
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response bey…
Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously inte…
Breaking the reciprocity of light propagation in photonic integrated circuits (PIC) - especially in the CMOS-compatible silicon-on-insulator platform - is a topic of intense research. However, a practical solution for monolithic integrating of optical isolators and circulators remains elusive. Here, we propose and analyze a new non-reciprocal photonic architecture operating with standard single-mode waveguides (or optical fibers). Our design exploits cascaded phase modulators separated by optical delay lines and suitably driven by time shifted waveforms. Because it is based on fully balanced i…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines …
Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 Vum). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an endfire silicon photonics optical phased array (OPA) with a hal…
Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular e…
An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_πL$'s below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_πL$'s of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabr…
Recent progress in silicon-based photonic integrated circuits (PICs) have opened new avenues for analog circuit designers to explore hybrid integration of photonics with CMOS ICs. Traditionally, optoelectronic systems are designed using discrete optics and electronics. Silicon photonic (SiP) platforms provide the opportunity to realize these systems in a compact chip-scale form factor and alleviate long-standing challenges in optoelectronics. In this work, we analyze multi-bias tuning in Ring-Assisted Mach Zehnder Modulator (RAMZM) and resulting trade-offs in analog RF photonic links realized …
Emerging technologies based on tailorable interactions between photons and phonons promise new capabilities ranging from high-fidelity microwave signal processing to non-reciprocal optics and quantum state control. While such light-sound couplings have been studied in a variety of physical systems, many implementations rely on non-standard materials and fabrication schemes that are challenging to co-implement with standard integrated photonic circuitry. Notably, despite significant advances in integrated electro-optic modulators, related acousto-optic modulator concepts have remained relativel…
A simplified Doppler frequency shift measurement approach based on Serrodyne optical frequency translation is reported. A sawtooth wave with an appropriate amplitude is sent to one phase modulation arm of a Mach-Zehnder modulator in conjunction with the transmitted signal to implement the Serrodyne optical frequency transition, as well as the optical phase modulation of the transmitted signal on the frequency-shifted optical carrier. The echo signal is applied to the other phase modulation arm of the Mach-Zehnder modulator. The optical signals from the two arms are combined in the Mach-Zehnder…
High-efficiency compact optical transmitter with a total bit energy of 0.78 pJ/bit including silicon slow-light modulator and open-collector current-mode driver
We experimentally demonstrate stable and user-adjustable single-photon interference in a 1 km long fiber- optical Mach-Zehnder interferometer, using an active phase control system with the feedback provided by a classical laser. We are able to continuously tune the single-photon phase difference between the interferometer arms using a phase modulator, which is synchronized with the gate window of the single-photon detectors. The phase control system employs a piezoelectric fiber stretcher to stabilize the phase drift in the interferometer. A single-photon net visibility of 0.97 is obtained, yi…
Non-reciprocal components are essential in photonic systems for protecting light sources and for signal routing functions. Acousto-optic methods to produce non-reciprocal devices offer a foundry-compatible alternative to magneto-optic solutions and are especially important for photonic integration. In this paper, we experimentally demonstrate a dynamically reconfigurable non-reciprocal acousto-optic modulator at telecom wavelength. The modulator can be arranged in a multitude of reciprocal and non-reciprocal configurations by means of an external RF input. The dynamic reconfigurability of the …
The accelerating increase in information traffic demands the expansion of optical access network systems that require cost reduction of optical and photonic components. Low cost, ease of fabrication, and integration capabilities of low optical-loss polymers make them attractive for photonic applications. In addition to passive wave-guiding components, electro-optic (EO) polymers consisting of a polymeric matrix doped with organic nonlinear chromophores have enabled wide-RF-bandwidth and low-power optical modulators. Beside board level passive and active optical components, compact on-chip modu…
Polymer based electro-optic modulators have shown great potentials in high frequency analog optical links. Existing commercial LiNibO3 Mach-Zehnder modulators have intrinsic drawbacks in linearity to provide high fidelity communication. In this paper, we present the design, fabrication and characterization of a traveling wave directional coupler modulator based on electro-optic polymer, which is able to provide high linearity, high speed, and low optical insertion loss. A silver ground electrode is used to reduce waveguide sidewall roughness due to the scattering of UV light in photolithograph…
State Key Laboratory of Precision Spectroscopy, East China Normal University（华东师范大学精密光谱科学国家重点实验室）；The Extreme Optoelectromechanics Laboratory (XXL), School of Physics, East China Normal University（华东师范大学物理学院极端光机电集成实验室）；Hefei National Laboratory（合肥国家实验室）；Shanghai Research Center for Quantum Sciences（上海量子科学研究中心）；Collaborative Innovation Center of Extreme Optics, Shanxi University（山西大学极端光学协同创新中心）
It has been demonstrated that dynamic refractive index modulation, which breaks time-reversal symmetry, can be used to create on-chip non-reciprocal photonic devices. In order to achieve amplitude non-reciprocity, all such devices moreover require modulations that break spatial symmetries, which adds complexity in implementations. Here we introduce a modal circulator, which achieves amplitude non-reciprocity through a circulation motion among three modes. We show that such a circulator can be achieved in a dynamically-modulated structure that preserves mirror symmetry, and as a result can be i…
Integrated lithium niobate (LN) photonics is a promising platform for future chip-scale microwave photonics systems owing to its unique electro-optic properties, low optical loss and excellent scalability. A key enabler for such systems is a highly linear electro-optic modulator that could faithfully covert analog electrical signals into optical signals. In this work, we demonstrate a monolithic integrated LN modulator with an ultrahigh spurious-free dynamic range (SFDR) of 120.04 dB Hz4/5 at 1 GHz, using a ring-assisted Mach-Zehnder interferometer configuration. The excellent synergy between …
Blue to Near-IR Integrated PZT Silicon Nitride Modulators for Quantum and Atomic Applications
University of California Santa Barbara（加州大学圣塔芭芭拉分校）；National Institute of Standards and Technology（美国国家标准与技术研究院）；University of Colorado, Boulder（科罗拉多大学博尔德分校）；Lightmatter, Inc.（光启有限公司）；U.S. Army Combat Capabilities Development Command Army Research Laboratory（美国陆军作战能力发展司令部陆军研究实验室）；DRS Daylight Solutions（DRS日光解决方案公司）
The 2 μm waveband is an area that could have significant technological consequences, with applications ranging from spectroscopy, LIDAR and free-space communications. The development of the thulium-doped fiber amplifier, hollow-core photonic bandgap fiber and 2 μm GaSb-based diode lasers has highlighted the ability of the waveband in alleviating the fiber capacity crisis in the incumbent communication infrastructure. The above has initiated vibrant development in the silicon photonic-space at 2 μm, where the area is capable of enabling highly-integrated photonic circuits, and potentially at lo…
Voltage-Programmable Photon Statistics Using a High-Extinction Thin-film Lithium Niobate Modulator
Kirchhoff-Institute for Physics, Heidelberg University（海德堡大学基尔霍夫物理研究所）；Physics Institute, University of Münster（明斯特大学物理研究所）；Pixel Photonics GmbH（Pixel Photonics有限公司）
A 2x2 Mach-Zehnder optical switch design with a footprint of 0.5 $μ$m x 2.5 $μ$m using nanomechanical gap plasmon phase modulators [arXiv:1410.0273] is presented. The extremely small footprint and modest optical loss are enabled by the strong phase modulation of gap plasmons in a mechanically actuated 17 nm air gap. Frequency-domain finite-element modeling at 780 nm shows that the insertion loss is ${\leq}$ 8.5 dB, the extinction ratio is > 25 dB, and crosstalk for all ports is > 24 dB. A design optimization approach and its dependence on geometrical parameters are discussed.
A general RF-photonic circuit design for implementing frequency multiplication is proposed. The circuit consists of N cascaded differentially-driven Mach-Zehnder modulators biased at the minimum transmission point with a progressive RF phase shift of 180/N applied to each stage. The frequency multiplication factor obtained is 2N. The novelty of the design is the reduced input RF energy required in comparison to the functionally equivalent parallel MZM configuration. Using transfer matrix method, a N=3 architecture is modeled to obtain frequency sextupling. An industry standard simulation tool …
Electro-optic modulators within Mach--Zehnder interferometers are a common construction for optical switches in integrated photonics. A challenge faced when operating at high switching speeds is that noise from the electronic drive signals will effect switching performance. Inspired by the Mach--Zehnder lattice switching devices of Van Campenhout et al. [Opt. Express, 17, 23793 (2009)] and techniques from the field of Nuclear Magnetic Resonance known as composite pulses, we present switches which offer protection against drive-noise in both the on and off state of the switch for both the phase…
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fu…
Engineering cm-scale true push-pull electro-optic modulators in a suspended GaAs photonic integrated circuit platform by exploiting the orientation induced asymmetry of the Pockels $r_{41}$ coefficient
High efficiency and compact lithium niobate non-resonant recirculating phase modulator and its applications
School of Physical Science and Technology, Lanzhou University（兰州大学物理科学与技术学院）；Integrated Photonics and Applications Centre (InPAC), School of Engineering, RMIT University（皇家墨尔本理工大学工程学院集成光子学与研究中心）；School of Mathematics and Physics, North China Electric Power University（华北电力大学数理学院）
Electro-optic (EO) modulators rely on interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced by using dielectric slot-waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usually applied through conductive regions in the direct vicinity of the optical waveguide. To avoid excessive optical loss, the conductivity of these regions is maintained at a moderate level, thus leadi…
