AI 中文总结
本文通过严谨建模与优化，系统评估多种增强方法对薄膜铌酸锂马赫-曾德尔调制器半波电压与带宽权衡的改善，实现0.84 V驱动电压和近220 GHz带宽的极限性能。
AI 中文摘要
在薄膜铌酸锂马赫-曾德尔调制器中，半波电压和带宽受相同的设计参数制约；因此，改善其中一个通常以牺牲另一个为代价。过去已探索多种方法来缓解这一权衡。具体而言，通过将光波导相对于电极非居中放置、采用慢波光学光栅以及高介电常数包层，可以降低偏置电压。通过实现周期性分段电极并利用低介电常数底部包层和衬底材料，可以提升带宽。本工作的目标是研究这些方法的增强效果。我们采用严谨的建模与优化方法来实现这一目标，评估每种增强措施的影响，并基于这些方法评估薄膜铌酸锂马赫-曾德尔调制器的极限性能。结果表明，整合所有增强措施的协同设计结构可实现0.84 V的驱动电压和接近220 GHz的调制带宽。
英文摘要
In thin-film lithium niobate Mach-Zehnder modulators, half-wave voltage and bandwidth are tied to the same design parameters; hence, improving one usually costs the other. Several methods have been pursued in the past to alleviate this tradeoff. Specifically, the bias voltage can be reduced through non-centered placement of optical waveguides with respect to electrodes, slow-wave optical gratings, and high-permittivity cladding layers. Bandwidth can be enhanced through implementing periodic segmented electrodes and exploiting low-permittivity bottom cladding and substrate materials. The objective of this work is to study the augmentative impact of these methods. We pursue a rigorous modeling and optimization approach to achieve this objective, estimate the impact of each augmentation, and evaluate the ultimate performance of TFLN MZMs based on these methods. It is shown that a co-designed structure that incorporates all these enhancing methods can attain a drive voltage of 0.84 V and a modulation bandwidth of almost 220 GHz.
