偏置电流对绝缘Al $_{0.3}$ Ga $_{0.7}$ As自旋寿命的影响
Bias current dependence of the spin lifetime in insulating Al$_{0.3}$Ga$_{0.7}$As
摘要：
利用三端Hanle效应几何结构研究了绝缘Al $_{0.3}$ Ga $_{0.7}$ As：Si中自旋寿命和Hanle信号幅度对偏置电流的依赖关系。Hanle信号的幅度在正向偏压下比反向偏压下大得多，尽管发现的自旋寿命在统计学上是相等的。自旋电阻面积的产品显示出强烈的增加与偏置电流反向偏置和小正向偏压，直到150 $μ$ A，超过此弱的依赖性被观察到。自旋寿命随着偏置电流的增加而显著减小。在5 ~ 30 K温度范围内，自旋积累和寿命的依赖性只随温度的升高而减弱。
英文摘要：
The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al$_{0.3}$Ga$_{0.7}$As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistance-area product shows a strong increase with bias current for reverse bias and small forward bias until 150 $μ$A, beyond which a weak dependence is observed. The spin lifetimes diminish substantially with increasing bias current. The dependence of the spin accumulation and lifetime diminish only moderately with temperature from 5 K to 30 K.
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