Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting filaments parallel to the current flow, has been an active research topic. Here we present the discovery of an opposite, metal-to-insulator switching that proceeds via nucleation and growth of an insulating barrier perpendicular to the driving current. The barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. Electrically inducing a transverse barrier enables a novel approach to voltage-controlled magnetism. By triggering a metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism can be achieved by a global voltage bias applied to the whole device.
High-Throughput Computational Discovery of Inverted Resistive Switching in Two-Dimensional Materials
Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design（新加坡科技设计大学）；Institute of Advanced Intelligence and Computing (IAIC), Agency for Science, Technology and Research (A*STAR)（科学技术研究局）；School of Information Science and Technology, Northwest University（西北大学）；School of Physics and Optoelectronics, Xiangtan University（湘潭大学）；Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Physical Science Research Center, Nanjing University（南京大学）；Quantum Innovation Centre (Q. InC), Agency for Science Technology and Research (A*STAR)（科学技术研究局）；Department of Mechanical Engineering, National University of Singapore（新加坡国立大学）；Department of Materials Science and Engineering, National University of Singapore（新加坡国立大学）；Department of Electrical and Computer Engineering, National University of Singapore（新加坡国立大学）
Electric field induced resistive switching in M$^{3+}_x$V$_{1-x}$O$_2$ (M$^{3+}$= Ga$^{3+}$, Al$^{3+}$) single crystals at temperatures below the T $\to$ M2 phase transition
Terahertz harmonic generation across the Mott insulator-metal transition
Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿-罗森多夫亥姆霍兹中心）；University of Fribourg（弗里堡大学）；Indian Institute of Science Education and Research Bhopal（博帕尔印度科学教育研究所）
