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arXiv 1402.4367cond-mat.mes-hallcond-mat.mtrl-sci
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Si(557)-Au表面的变温扫描隧道谱

Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface

M. Sauter, R. Hoffmann, C. Surgers, H. v. Lohneysen

摘要:

利用室温和低温(77 K)扫描隧道谱(STS)和电压依赖扫描隧道显微镜(STM)数据研究了实空间中准一维Si(557)-Au表面的局域电子性质.在表面的不同位置处观察到伽马点附近的带隙局部电子态密度,即,在由Si吸附原子和台阶边缘原子引起的突起处。在间隙区域内,观察到两个不同的峰上的链的局部突起归因于Si吸附原子。在从室温冷却到T = 77 K后,两种类型的突起上的能隙变宽。因此,局部电子性质的温度依赖性不能归因于Peierls转变只发生在台阶边缘。我们建议,应更多地关注有限尺寸效应的一维段。

英文摘要:

Room-temperature and low-temperature (77 K) scanning tunneling spectroscopy (STS) and voltage-dependent scanning tunneling microscopy (STM) data are used to study the local electronic properties of the quasi-one-dimensional Si(557)-Au surface in real space. A gapped local electron density of states near the Gamma-point is observed at different positions of the surface, i.e., at protrusions arising from Si adatoms and step-edge atoms. Within the gap region, two distinct peaks are observed on the chain of localized protrusions attributed to Si adatoms. The energy gap widens on both types of protrusions after cooling from room temperature to T = 77 K. The temperature dependence of the local electronic properties can therefore not be attributed to a Peierls transition occurring for the step edge only. We suggest that more attention should be paid to finite-size effects on the one-dimensional segments.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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