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arXiv 1307.7801nlin.PS
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饱和非线性电晶格中的本征局域模

Intrinsic Localized Modes in a Nonlinear Electrical Lattice with Saturable Nonlinearity

W. Shi, S. Shige, Y. Soga, M. Sato, A. J. Sievers

摘要:

在Hadzievski及其同事的理论工作基础上,对具有饱和非线性的电子电路晶格中的驱动本征局域模进行了实验研究。他们提出,饱和非线性可以引入过渡点,在不可积晶格中的局部激发将自由移动。在我们的实验中,MOS电容器提供了电晶格中的饱和非线性。由于软非线性驱动器锁定,在晶格的线性频带的底部以下观察到自谐振固定ILM。随着驱动器频率的降低,ILM的宽度以步进的方式变化,就像以位点为中心和以键为中心的ILM位置之间的屏障的软化一样,与理论预期一致。然而,这些步骤显示了在上频率扫描和下频率扫描之间的滞后,并且这种滞后抑制了ILM的自由运动。

英文摘要:

This experimental study of driven intrinsic localized modes (ILMs) in an electronic circuit lattice with saturable nonlinearity follows the theoretical work of Hadzievski and coworkers. They proposed that a saturable nonlinearity could introduce transition points where localized excitations in nonintegrable lattices would move freely. In our experiments MOS capacitors provide the saturable nonlinearity in an electric lattice. Because of the soft nonlinearity driver locked, auto-resonance stationary ILMs are observed below the bottom of a linear frequency band of the lattice. With decreasing driver frequency the width of the ILM changes in a step-wise manner as does the softening of the barrier between site-centered and bond-centered ILM locations in agreement with theoretical expectations. However, the steps show hysteresis between up and down frequency scans and such hysteresis inhibits the free motion of ILMs.

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