Silicon avalanche photodiodes (APDs) are sensitive to operating temperature fluctuations and are also susceptible to radiation flux expected in satellite-based quantum experiments. We introduce a low power voltage adjusting mechanism to overcome the effects of in-orbit temperature fluctuations. We also present data on the performance of Si APDs after irradiation (gamma-ray and proton beam). Combined with an analysis of expected orbital irradiation, we propose that a Si APD in a 400 km equatorial orbit may operate beyond the lifetime of the satellite.
We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 uW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer.
We report operation and characterization of a lab-assembled single-photon detector based on commercial silicon avalanche photodiodes (PerkinElmer C30902SH, C30921SH). Dark count rate as low as 5 Hz was achieved by cooling the photodiodes down to -80 C. While afterpulsing increased as the photodiode temperature was decreased, total afterpulse probability did not become significant due to detector's relatively long deadtime in a passively-quenched scheme. We measured photon detection efficiency higher than 50% at 806 nm.
We report a 2 GHz operation of InGaAs avalanche photodiodes for efficient single photon detection at telecom wavelengths. Employing a self-differencing circuit that incorporates tuneability in both frequency and arm balancing, extremely weak avalanches can now be sensed so as to suppress afterpulsing. The afterpulse probability is characterized as 4.84% and 1.42% for a photon detection efficiency of 23.5% and 11.8%, respectively. The device will further increase the secure bit rate for fiber wavelength quantum key distribution.
Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attac…
Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor, doping concentrations and temperature and presents an additional source of noise, along with dark counts. Unlike dark counts which appear randomly in time, aterpulses and are time-correlated with the previous detections. For measurements that rely on timing information afterpulsing can create fake signals and diminish the sensitivity. In this work we test a no…
We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection efficiency at 600 nm is measured to be 73.8%, corresponding to an avalanche probability of 91.1% of the absorbed photons, with a dark count probability below 1.1x10^{-6} per gate. With this performance and operation close to room temperature, fast-gated silicon avalanche photodiodes are ideal for optical quantum information processing that requires single-shot pho…
We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function $g^{(2)}$ of the emission from a diode laser with a single detector which works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quan…
Miller formula modified to take into account voltage drop on serial resistor of an avalanche photodiode is considered. It is proven by experimental data that modified Miller formula can describe operation of both regular and micropixel avalanche photodiodes with good enough precision. It is shown that operation parameters of the devices can be determined using a linear extrapolation of the voltage-current curve for both regular avalanche photodiode and the one operating in Geiger mode.
In this work we investigate operation in the Geiger mode of the new single photon avalanche photo diode (SPAD) SAP500 manufactured by Laser Components. This SPAD is sensitive in the range 400-1000nm and has a conventional reach-through structure which ensures good quantum efficiency at the long end of the spectrum. By use of passive and active quenching schemes we investigate detection efficiency, timing jitter, dark counts, afterpulsing, gain and other important parameters and compare them to the "standard" low noise SPAD C30902SH from Perkin Elmer. We conclude that SAP500 offers better combi…
Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and substantially restores low dark count rates. Of nine samples, the maximum dark count rate reduction factor varies between 5.3 and 758 when operating at minus 80 deg…
Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval. However, such photon number resolving detectors are urgently needed for applications in quantum computing,2-4 communications5 and interferometry,6 as well as for extending the applicability of quantum detection generally. Here we show that, contrary to current belief,3,4 avalanche photodiodes are capable of detecting photon number, using a technique to measure very weak avalanc…
In this work we attempt to establish the best time resolution attainable with a scintillation counter consisting of a plastic scintillator read out by a Geiger-mode Avalanche Photodiode. The measured time resolution is inversely proportional to the square root of the energy deposited in the scintillator, and scales to 18ps (sigma) at 1MeV. This result competes with the best ones reported for photomultiplier tubes.
We present a method designed to efficiently extract optical signals from InGaAs avalanche photodiodes (APDs) operated in gated mode. In particular, our method permits an estimation of the fraction of counts which actually results from the signal being measured, as opposed to being produced by noise mechanisms, specifically by afterpulsing. Our method in principle allows the use of InGaAs APDs at high detection efficiencies, with the full operation bandwidth, either with or without resorting to the application of a dead time. As we show below, our method can be used in configurations where afte…
Afterpulsing noise in InGaAs/InP single photon avalanche photodiodes (APDs) is caused by carrier trapping and can be suppressed successfully through limiting the avalanche charge via sub-nanosecond gating. Detection of faint avalanches requires an electronic circuit that is able to effectively remove the gate-induced capacitive response while keeping photon signals intact. Here we demonstrate a novel ultra-narrowband interference circuit (UNIC) that can reject the capacitive response by up to 80 dB per stage with little distortion to avalanche signals. Cascading two UNIC's in a readout circuit…
Modern avalanche photodiodes (APDs) with high gain are good device candidates for light readout from detectors applied in relativistic heavy ion collisions experiments. The results of the investigations of the APDs properties from Zecotek, Ketek and Hamamatsu manufacturers after irradiation using secondary neutrons from cyclotron facility U120M at NPI of ASCR in Řež are presented. The results of the investigations can be used for the design of the detectors for the experiments at NICA and FAIR.
A graphical presentation of the timing of avalanche photodiode events in the datasets from the experiment of Weihs et al. [Phys. Rev. Lett. 81, 5039 (1998)] makes manifest the existence of two types of signal delay: (1) The introduction of rapid switching of the input to a pair of transverse electro-optical modulators causes a delay of approximately 20 nanoseconds for a proportion of coincident avalanche photodiode events; this effect has been previously noted, but a different cause is suggested by the data as considered here. (2) There are delays that depend on in which avalanche photodiode a…
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.
A Large Area Avalanche Photodiode (LAAPD) was studied, aiming to access its performance as light detector at low temperatures, down to -80 C. The excess noise factor, F, was measured and found to be approximately independent of the temperature. A linear dependence of F on the APD gain with a slope of 0.00239 +/- 0.00008 was observed for gains above 100. The detection of low intensity light pulses, producing only a few primary electron-hole pairs in the photodiode, is reported.
A successful operation of a new optical readout system (THGEM + WLS + MGPDs (multichannel array of multipixel avalanche Geiger photodiodes) in a two-phase liquid xenon detector was demonstrated.
We investigate the feasibility and performance of photon-number-resolved photodetection employing single-photon avalanche photodiodes (SPADs) with low dark counts. While the main idea, to split $n$ photons into $m$ detection modes with no more than one photon per mode, is not new, we investigate here a important variant of this situation where SPADs are side-coupled to the same waveguide rather than terminally coupled to a propagation tree. This prevents the nonideal SPAD quantum efficiency from contributing to photon loss. We propose a concrete SPAD segmented waveguide detector based on verti…
We present the first operation of the Avalanche Photodiode (APD) from Hamamatsu to xenon scintillation light and to direct X-rays of 22.1 keV and 5.9 keV. A large non-linear response was observed for the direct X-ray detection. At 415 V APD bias voltage it was of about 30 % for 22.1 keV and about 45 % for 5.9 keV. The quantum efficiency for 172 nm photons has been measured to be 69 +/- 15 %.
It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite sensitivity and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection remains still unexplored. In this contribution, we are going to expose the different steps that we have taken in order to prove the efficiency of Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present an array of pixels of 1mmx1mm fabricated with a standard CMOS technology for charact…
We demonstrate high count rate single photon detection at telecom wavelengths using a thermoelectrically-cooled semiconductor diode. Our device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and coupled to a tuneable self-differencing circuit for enhanced detection sensitivity. We find the count rate is linear with the photon flux in the single photon detection regime over approximately four orders of magnitude, and saturates at 1 gigacount/s at high photon fluxes. This result highlights promising potential for APDs in high bit rate quantum informati…
Large Area Avalanche Photodiodes (LAAPDs) were used for a series of systematic measurements of the scintillation light in Ar, Kr, and Xe gas. Absolute quantum efficiencies are derived. Values for Xe and Kr are consistent with those given by the manufacturer. For the first time we show that argon scintillation (128 nm) can be detected at a quantum efficiency above 40%. Low-pressure argon gas is shown to emit significant amounts of non-UV radiation. The average energy expenditure for the creation of non-UV photons in argon gas at this pressure is measured to be below 378 eV.
The dead space model of non-local impact ionization has been developed independently by three different research groups in order to include a 'soft' dead space. This paper seeks to compare these models for the first time. The models are fitted to Monte Carlo simulation data and it is found that there are no significant differences between the models except that the Liverpool model cannot be used to fit one data set which has a very soft dead space. Likewise the models give very similar results when used to calculate the excess noise factor for low noise avalanche photodiodes.
The photon detection efficiencies of multi-pixel Geiger-mode avalanche photodiodes manufactured by different produ cers are estimated. A new fit method of the response spectra to low-intensity light, taking into ac count after-pulse and cross-talk effects is proposed to yield the initial number of photons. The value of photon detection efficiency is calculated using a calibrated photodetector as a reference.
The results of a development of a scintillator counter with wavelength shifting (WLS) fibre and a multi-pixel Geiger-mode avalanche photodiode readout are presented. The photodiode has a metal-resistor-semiconductor layered structure and operates in the limited Geiger mode. The scintillator counter has been developed for the EMMA underground cosmic ray experiment.
In this paper we present a general method for estimating rates of accidental coincidence between a pair of single photon detectors operated within their saturation regimes. By folding the effects of recovery time of both detectors and the detection circuit into an "effective duty cycle" we are able to accomodate complex recovery behaviour at high event rates. As an example, we provide a detailed high-level model for the behaviour of passively quenched avalanche photodiodes, and demonstrate effective background subtraction at rates commonly associated with detector saturation. We show that by p…
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circui…
We describe a detector for measuring the time of flight of forward protons at the Large Hadron Collider (LHC) up to and beyond the full instantaneous design luminosity of 1034 cm-2 s-1. Our design is based on deep diffused, high gain avalanche photodiodes (APDs) which give a signal of ~6000 e when traversed by 7 Teravolt protons. We observe pulse risetimes of 650 psec and a pulse width of 5 nsec and calculate a time resolution of ~10 psec and a maximum count rate of >100 Mhz.
An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change of electric field within the depleted region caused by internal discharge and external recharge currents. Conclusions obtained as a result of modelling are compared with experimental data. Simulations show that typical durations of the front and rear edges of the discharge current have the same magnitude of less than 50 ps. The front of the external recharg…
A Cherenkov detector based on an array of five lead fluoride ($β$-PbF$_2$) crystals of size 30 mm$\times$30 mm$\times$160 mm read out by reverse-type avalanche photodiodes (APD's) of active area 10 mm$\times$10 mm was used to measure the flux of secondary particles emerging from the annihilation of pulsed beams of antiprotons at the Antiproton Decelerator of CERN. We compared the relative photon yields of radiators made of $β$-PbF$_2$, fused silica, UV-transparent acrylic, lead glass, and a lead-free, high-refractive-index glass. Some {\it p-i-n} photodiodes were also used for the readout, but…
The Tokai-to-Kamioka (T2K) experiment is a second generation long baseline neutrino oscillation experiment which aims at a sensitive search for the nu_e appearance. The main design features of the T2K near detectors located at 280 m from the target are presented. Scintillator counters developed for the T2K near detectors are described. Readout of the counters is provided via WLS fibers embedded into S-shape grooves in a scintillator and viewed from both ends by multi-pixel avalanche photodiodes operating in a limited Geiger mode. A desription, operational principles and the results of tests of…
Multilayer graded-bandgap avalanche photodiodes (APDs) are the future deterministic photomultipliers, owing to their deterministic amplification with twofold stepwise gain via impact ionization when operated in the staircase regime. Yet, the stepwise impact ionization irregularities worsen as the number of steps increases. These irregularities in impact ionization are the major source of noise in these APDs. These solid-state devices could replace conventional silicon photomultiplier tubes if they are carefully studied and designed. A noise model for multistep staircase APDs, considering equal…
InGaAs single-photon avalanche photodiodes (APDs) are key enablers for high-bit rate quantum key distribution. However, the deviation of such detectors from ideal models can open side-channels for an eavesdropper, Eve, to exploit. The phenomenon of backflashes, whereby APDs reemit photons after detecting a photon, gives Eve the opportunity to passively learn the information carried by the detected photon without the need to actively interact with the legitimate receiver, Bob. Whilst this has been observed in slow-gated detectors, it has not been investigated in fast-gated APDs where it has bee…
We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 $^\circ$C and 25 $^\circ$C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each sensor are: the internal gain as a function of the bias voltage and temperature, the gain variation with respect to the bias voltage, and the dark current as a function of the gain. The systematic uncertainties have been evaluated during the commiss…
The application of reach-through avalanche photodiodes (R'APD) as a photodetector for scintillator tiles has been investigated. The light collected by WLS fibers (0.84mm and 1mm diameter) embedded in the scintillator has been transmited to the 0.5mm2 active surface of APD by clear optical fibers and optical connectors. A low noise charge sensitive preamplifier (approximately 400 electrons equivalent noise charge) has been used to gain the photodiode signal. Various configurations of tile-fibre systems, suitable for CMS and LHCb experiments at LHC have been studied using cosmic muons and muon b…
Avalanche photodiodes (APDs) are well-suited for single-photon detection on quantum communication satellites as they are a mature technology with high detection efficiency without requiring cryogenic cooling. They are, however, prone to significantly increased thermal noise caused by in-orbit radiation damage. Previous work demonstrated that a one-time application of thermal annealing reduces radiation-damage-induced APD thermal noise. Here we examine the effect of cyclical proton irradiation and thermal annealing. We use an accelerated testing environment which emulates a realistic two-year o…
Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work we report on a fitting technique used to account for different detector responses resulting from photo absorption in the various APD layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2, and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g. to distinguish between x-rays and MeV electrons in our experiment.
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geige…
Scintillation light produced in liquid xenon (LXe) by alpha particles, electrons and gamma-rays was detected with a large area avalanche photodiode (LAAPD) immersed in the liquid. The alpha scintillation yield was measured as a function of applied electric field. We estimate the quantum efficiency of the LAAPD to be 45%. The best energy resolution from the light measurement at zero electric field is 7.5%(sigma) for 976 keV internal conversion electrons from Bi-207 and 2.6%(sigma) for 5.5 MeV alpha particles from Am-241. The detector used for these measurements was also operated as a gridded io…
The Silicon Photomultiplier (SiPM) is a mature photodetector concept that is applied in a variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements of the sensor performance are gradually approaching to a saturation. In this work we present our new concept to overcome the intrinsic limitations of planar configurations of electrodes. Our non-planar technology is based on focusing and enhancing the electric fields by tip-like electrodes. The shape of the electric field and the lack of typical micro-cell edges, allows us to exclude cel…
Recent years getting progress in the area of micropixel avalanche photodiode makes them attractive as sensors for scintillation detectors. The performance of the scintillation detectors is strongly tied to the physical properties of MAPD. For this point of wives, we will investigate three types MAPD-3NK, MAPD-3NM and MAPD-3NM-II for possible use in a scintillation detector. Investigated avalanche photodiodes have the following parameters e.g low operation voltage (90V$<$U$<$50V), high pixel density (4000 pixel/mm^2), high photodetection efficiency (40%) and high gain (6*10^4). Gamma-ray detect…
A three-step process has been demonstrated to improve the performance of photodiode by creating nanocone forest on the surface of photodiode as an antireflection layer. This high-throughput, low-cost process has been shown to decrease the reflectivity by 66.1%, enhance the quantum efficiency by 27%, and increase the responsivity by 25.7%. This low-cost manufacture process can be applied to increase the responsivity of silicon based photonic devices.
Single photon detectors have dark count rates that depend strongly on the bias level for detector operation. In the case of weak light sources such as novel lasers or single-photon emitters, the rate of counts due to the light source can be comparable to that of the detector dark counts. In such cases, a characterization of the statistical properties of the dark counts is necessary. The dark counts are often assumed to follow a Poisson process that is statistically independent of the incident photon counts. This assumption must be validated for specific types of photodetectors. In this work, w…
For a remote sensing optical payload to achieve a Ground Sampling Distance of ~ 10-30 m, a critical problem is platform-induced motion blur. While forward motion compensation can reduce this transit speed, it comes at the expense of a more challenging satellite attitude control system and induces a variable observation/illumination angle. This relative motion can be frozen out by simply reading the sensor system at a frame rate that matches the ground resolution element's pixel crossing time. To achieve high resolution using this Time-Delay Integration (TDI)-like approach requires high speed a…
The upgrades of ATLAS and CMS for the High Luminosity LHC (HL-LHC) highlighted physics objects timing as a tool to resolve primary interactions within a bunch crossing. Since the expected pile-up is around 200, with an r.m.s. time spread of 180 ps, a time resolution of about 30 ps is needed. The timing detectors will experience a 1-MeV neutron equivalent fluence of about $Φ_{eq}=10^{14}$ and $10^{15}$ cm$^{-2}$ for the barrel and end-cap regions, respectively. In this contribution, deep diffused Avalanche Photo Diodes (APDs) produced by Radiation Monitoring Devices are examined as candidate ti…
We show that semiconductor avalanche photodiodes can exhibit diminutive amplification noise during the early evolution of avalanches. The noise is so low that the number of locally excited charges that seed each avalanche can be resolved. These findings constitute an important first step towards realization of a solid-state noiseless amplifier. Moreover, we believe that the experimental setup used, \textit{i.e.}, time-resolving locally excited avalanches, will become a useful tool for optimizing the number resolution.
Spectroscopy of Earth-like exoplanets and ultra-faint galaxies are priority science cases for the coming decades. Here, broadband source flux rates are measured in photons per square meter per hour, imposing extreme demands on detector performance, including dark currents lower than 1 e-/pixel/kilosecond, read noise less than 1 e-/pixel/frame, and large formats. There are currently no infrared detectors that meet these requirements. The University of Hawaii and industrial partners are developing one promising technology, linear mode avalanche photodiodes (LmAPDs), using fine control over the H…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in different applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from int…
The single-photon avalanche photodiode(SPAD) has been widely used in research on quantum optics. The afterpulsing effect, which is an intrinsic character of SPAD, affects the system performance in most experiments and needs to be carefully handled. For a long time, afterpulsing has been presumed to be determined by the pre-ignition avalanche. We studied the afterpulsing effect of a commercial InGaAs/InP SPAD (The avalanche photodiode model is: Princeton Lightwave PGA-300) and demonstrated that its afterpulsing is non-Markovian, with a memory effect in the avalanching history. Theoretical analy…
The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (Si PM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the Si PM semiconductor structure is performed using short-wave or long-wave light.…
4H-Silicon Carbide, when considered as a material for the fabrication of Low Gain Avalanche Detectors for particle timing and position measurement, offers potential advantages over Silicon. We discuss an ongoing study of this material aimed at the fabrication and test of prototype fast timing sensors. This work is well aligned with technical directions identified in the recent Department of Energy study, Basic Research Needs for High Energy Physics Detector Research and Development.
The present manuscript summarizes novel studies on the application of large area avalanche photodiodes (LAAPDs) to the detection of X-rays and vacuum ultraviolet (VUV) light. The operational characteristics of four different LAAPDs manufactured by Advanced Photonix Inc., with active areas of 80 and 200 mm^2 were investigated for X-ray detection at room temperature. The best energy resolution was found to be in the 10-18% range for 5.9 keV X-rays. The LAAPD, being compact, simple to operate and with high counting rate capability (up to about 10^5/s), proved to be useful in several applications,…
We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147 \pm 0.027$ (for $E_e = 90$ eV) to $385.8 \pm 3.3$ (for $E_e = 900$ eV), when operating the diode at a bias of $V_{apd} = 350$ V.} T…
We describe the power distribution systems and grounding schemes built for the near and far detectors of the NOvA long-baseline neutrino experiment. They are used to power the avalanche photodiodes and their thermoelectric coolers, the front-end boards that read out, digitize and time stamp the signals from the avalanche photodiodes, and the data concentrator modules used to receive and format the data from the front-end boards before sending them to a farm of computers used to build the events. The system powers 344,064 readout channels in the far detector and 20,192 channels in the near dete…
At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is surprisingly poor. Here, we break the theoretical one photon - one electron barrier and demonstrate a device with a certified external quantum efficiency (EQE) above 130% in UV range without external amplification. The record high performance is obtained using a nanostructured silicon photodiode with self-induced junction. We show that the high efficiency is based on e…
Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhanceme…
