We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection efficiency at 600 nm is measured to be 73.8%, corresponding to an avalanche probability of 91.1% of the absorbed photons, with a dark count probability below 1.1x10^{-6} per gate. With this performance and operation close to room temperature, fast-gated silicon avalanche photodiodes are ideal for optical quantum information processing that requires single-shot photon number detection.
We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 uW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer.
We report operation and characterization of a lab-assembled single-photon detector based on commercial silicon avalanche photodiodes (PerkinElmer C30902SH, C30921SH). Dark count rate as low as 5 Hz was achieved by cooling the photodiodes down to -80 C. While afterpulsing increased as the photodiode temperature was decreased, total afterpulse probability did not become significant due to detector's relatively long deadtime in a passively-quenched scheme. We measured photon detection efficiency higher than 50% at 806 nm.
We report a 2 GHz operation of InGaAs avalanche photodiodes for efficient single photon detection at telecom wavelengths. Employing a self-differencing circuit that incorporates tuneability in both frequency and arm balancing, extremely weak avalanches can now be sensed so as to suppress afterpulsing. The afterpulse probability is characterized as 4.84% and 1.42% for a photon detection efficiency of 23.5% and 11.8%, respectively. The device will further increase the secure bit rate for fiber wavelength quantum key distribution.
Silicon avalanche photodiodes (APDs) are sensitive to operating temperature fluctuations and are also susceptible to radiation flux expected in satellite-based quantum experiments. We introduce a low power voltage adjusting mechanism to overcome the effects of in-orbit temperature fluctuations. We also present data on the performance of Si APDs after irradiation (gamma-ray and proton beam). Combined with an analysis of expected orbital irradiation, we propose that a Si APD in a 400 km equatorial orbit may operate beyond the lifetime of the satellite.
Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attac…
Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor, doping concentrations and temperature and presents an additional source of noise, along with dark counts. Unlike dark counts which appear randomly in time, aterpulses and are time-correlated with the previous detections. For measurements that rely on timing information afterpulsing can create fake signals and diminish the sensitivity. In this work we test a no…
Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval. However, such photon number resolving detectors are urgently needed for applications in quantum computing,2-4 communications5 and interferometry,6 as well as for extending the applicability of quantum detection generally. Here we show that, contrary to current belief,3,4 avalanche photodiodes are capable of detecting photon number, using a technique to measure very weak avalanc…
We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function $g^{(2)}$ of the emission from a diode laser with a single detector which works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quan…
A multichannel detector has been constructed using a single avalanche photodiode and a fiber-loop delay line. Detection probabilities of the channels can be set using a variable-ratio coupler. The performance of the detector is demonstrated on its capability to distinguish multi-photon states (containing two or more photons) from the one-photon state and the vacuum state.
In this work we investigate operation in the Geiger mode of the new single photon avalanche photo diode (SPAD) SAP500 manufactured by Laser Components. This SPAD is sensitive in the range 400-1000nm and has a conventional reach-through structure which ensures good quantum efficiency at the long end of the spectrum. By use of passive and active quenching schemes we investigate detection efficiency, timing jitter, dark counts, afterpulsing, gain and other important parameters and compare them to the "standard" low noise SPAD C30902SH from Perkin Elmer. We conclude that SAP500 offers better combi…
Afterpulsing noise in InGaAs/InP single photon avalanche photodiodes (APDs) is caused by carrier trapping and can be suppressed successfully through limiting the avalanche charge via sub-nanosecond gating. Detection of faint avalanches requires an electronic circuit that is able to effectively remove the gate-induced capacitive response while keeping photon signals intact. Here we demonstrate a novel ultra-narrowband interference circuit (UNIC) that can reject the capacitive response by up to 80 dB per stage with little distortion to avalanche signals. Cascading two UNIC's in a readout circuit…
A measurement system for determining the gain distributions of avalanche photodiodes (APDs) in a low gain range is presented. The system is based on an ultralow-noise charge--sensitive amplifier and detects the output carriers from an APD. The noise of the charge--sensitive amplifier is as low as 4.2 electrons at a sampling rate of 200 Hz. The gain distribution of a commercial Si APD with low average gains are presented, demonstrating the McIntyre theory in the low gain range.
We demonstrate the use of two high speed avalanche photodiodes in exploring higher order photon correlations. By employing the photon number resolving capability of the photodiodes the response to higher order photon coincidences can be measured. As an example we show experimentally the sensitivity to higher order correlations for three types of photon sources with distinct photon statistics. This higher order correlation technique could be used as a low cost and compact tool for quantifying the degree of correlation of photon sources employed in quantum information science.
Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and substantially restores low dark count rates. Of nine samples, the maximum dark count rate reduction factor varies between 5.3 and 758 when operating at minus 80 deg…
We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using CMOS (complementary metal oxide semiconductor) technology guaranteeing long-term stability, reliability and compactness. In the free-running mode we find a single photon detection efficiency of 10% with <2kHz of noise.
We investigate the feasibility and performance of photon-number-resolved photodetection employing single-photon avalanche photodiodes (SPADs) with low dark counts. While the main idea, to split $n$ photons into $m$ detection modes with no more than one photon per mode, is not new, we investigate here a important variant of this situation where SPADs are side-coupled to the same waveguide rather than terminally coupled to a propagation tree. This prevents the nonideal SPAD quantum efficiency from contributing to photon loss. We propose a concrete SPAD segmented waveguide detector based on verti…
We present a method designed to efficiently extract optical signals from InGaAs avalanche photodiodes (APDs) operated in gated mode. In particular, our method permits an estimation of the fraction of counts which actually results from the signal being measured, as opposed to being produced by noise mechanisms, specifically by afterpulsing. Our method in principle allows the use of InGaAs APDs at high detection efficiencies, with the full operation bandwidth, either with or without resorting to the application of a dead time. As we show below, our method can be used in configurations where afte…
We report a demonstration of quantum key distribution (QKD) at GHz clock rates with InGaAs avalanche photodiodes (APDs) operating in a self-differencing mode. Such a mode of operation allows detection of extremely weak avalanches so that the detector afterpulse noise is sufficiently suppressed. The system is characterized by a secure bit rate of 2.37 Mbps at 5.6 km and 27.9 kbps at 65.5 km when the fiber dispersion is not compensated. After compensating the fiber dispersion, the QKD distance is extended to 101 km, resulting in a secure key rate of 2.88 kbps. Our results suggest that InGaAs APD…
In this paper we present a novel construction of an active quenching circuit intended for single photon detection. For purpose of evaluation, we have combined this circuit with a standard avalanche photodiode C30902S to form a single photon detector. A series of measurements, presented here, show that this single photon detector has a dead time of less than 40ns, maximum random counting frequency of over 14MHz, low after pulsing, detection efficiency of over 20% and a good noise performance. This simple and robust active quenching circuit can be built from of-the-shelf electronic components an…
A graphical presentation of the timing of avalanche photodiode events in the datasets from the experiment of Weihs et al. [Phys. Rev. Lett. 81, 5039 (1998)] makes manifest the existence of two types of signal delay: (1) The introduction of rapid switching of the input to a pair of transverse electro-optical modulators causes a delay of approximately 20 nanoseconds for a proportion of coincident avalanche photodiode events; this effect has been previously noted, but a different cause is suggested by the data as considered here. (2) There are delays that depend on in which avalanche photodiode a…
We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can s…
A highly sensitive photodetection system with a detection limit of 1 photon/s was developed. This system uses a commercially available 200-mm-diameter silicon avalanche photodiode (APD) and an in-house-developed ultralow-noise readout circuit, which are both cooled to 77 K. When the APD operates at a low gain of about 10, it has a high-linearity response to the number of incident photons and a low excess noise factor. The APD also has high quantum efficiency and a dark current of less than 1 e/s at 77 K. This photodetection system will shorten the measurement time and enable higher spatial and…
In this paper we present a general method for estimating rates of accidental coincidence between a pair of single photon detectors operated within their saturation regimes. By folding the effects of recovery time of both detectors and the detection circuit into an "effective duty cycle" we are able to accomodate complex recovery behaviour at high event rates. As an example, we provide a detailed high-level model for the behaviour of passively quenched avalanche photodiodes, and demonstrate effective background subtraction at rates commonly associated with detector saturation. We show that by p…
Fast gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high bit rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system or even an entire QKD network. Here, we investigate the behavior of a gigahertz-gated, self-differencing InGaAs APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modelling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche prob…
Quantum key distribution (QKD) at telecom wavelengths (1260-1625nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, indium gallium arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize…
We propose and demonstrate a scheme to realize a high-efficiency truly quantum random number generator (RNG) at room temperature (RT). Using an effective extractor with simple time bin encoding method, the avalanche pulses of avalanche photodiode (APD) are converted into high-quality random numbers (RNs) that are robust to slow varying noise such as fluctuations of pulse intensity and temperature. A light source is compatible but not necessary in this scheme. Therefor the robustness of the system is effective enhanced. The random bits generation rate of this proof-of-principle system is 0.69 M…
Multilayer graded-bandgap avalanche photodiodes (APDs) are the future deterministic photomultipliers, owing to their deterministic amplification with twofold stepwise gain via impact ionization when operated in the staircase regime. Yet, the stepwise impact ionization irregularities worsen as the number of steps increases. These irregularities in impact ionization are the major source of noise in these APDs. These solid-state devices could replace conventional silicon photomultiplier tubes if they are carefully studied and designed. A noise model for multistep staircase APDs, considering equal…
Implementation of high-speed quantum key distribution~(QKD) has become one of the major focus in the field, which produces high key-generation rate for applications. To achieve high-speed QKD, tailored techniques are developed and employed to quickly generate and detect quantum states. However, these techniques may introduce unique loopholes to compromise the security of QKD systems. In this paper, we investigate the loopholes of self-differencing~(SD) avalanche photodiode~(APD) detector, typically used for high-speed detection in a QKD system, and demonstrate experimental testing of SD APD de…
InGaAs single-photon avalanche photodiodes (APDs) are key enablers for high-bit rate quantum key distribution. However, the deviation of such detectors from ideal models can open side-channels for an eavesdropper, Eve, to exploit. The phenomenon of backflashes, whereby APDs reemit photons after detecting a photon, gives Eve the opportunity to passively learn the information carried by the detected photon without the need to actively interact with the legitimate receiver, Bob. Whilst this has been observed in slow-gated detectors, it has not been investigated in fast-gated APDs where it has bee…
We show that semiconductor avalanche photodiodes can exhibit diminutive amplification noise during the early evolution of avalanches. The noise is so low that the number of locally excited charges that seed each avalanche can be resolved. These findings constitute an important first step towards realization of a solid-state noiseless amplifier. Moreover, we believe that the experimental setup used, \textit{i.e.}, time-resolving locally excited avalanches, will become a useful tool for optimizing the number resolution.
Avalanche photodiodes (APDs) are well-suited for single-photon detection on quantum communication satellites as they are a mature technology with high detection efficiency without requiring cryogenic cooling. They are, however, prone to significantly increased thermal noise caused by in-orbit radiation damage. Previous work demonstrated that a one-time application of thermal annealing reduces radiation-damage-induced APD thermal noise. Here we examine the effect of cyclical proton irradiation and thermal annealing. We use an accelerated testing environment which emulates a realistic two-year o…
We present an active quenching application specific integrated circuit (ASIC), for use in conjunction with InGaAs/InP avalanche photodiodes (APDs), for 1550 nm single-photon detection. To evaluate its performance, we first compare its operation with that of standard quenching electronics. We then test 4 InGaAs/InP APDs using the ASIC, operating both in the free-running and gated modes, to study more general behavior. We investigate not only the standard parameters under different working conditions but also parameters such as charge persistence and quenching time. We also use the multiple trap…
Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near infrared region. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown used to detect a photoelectron. This fluorescence light might have serious impacts on experimental applications like quantum cryptography or single-particle spectroscopy. We characterized the fluorescence behaviour of silicon avalanche photodiodes in the experimentally simple passive quenching configuration and discuss implications for their use in quantum cr…
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion tra…
Single photon detectors have dark count rates that depend strongly on the bias level for detector operation. In the case of weak light sources such as novel lasers or single-photon emitters, the rate of counts due to the light source can be comparable to that of the detector dark counts. In such cases, a characterization of the statistical properties of the dark counts is necessary. The dark counts are often assumed to follow a Poisson process that is statistically independent of the incident photon counts. This assumption must be validated for specific types of photodetectors. In this work, w…
We experimentally demonstrate optical control of negative-feedback avalanche diode (NFAD) detectors using bright light. We deterministically generate fake single-photon detections with a better timing precision than normal operation. This could potentially open a security loophole in quantum cryptography systems. We then show how monitoring the photocurrent through the avalanche photodiode can be used to reveal the detector is being blinded.
Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhanceme…
Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art integrated quantum photonics demonstrations still require the coupling of light to external photodetectors. On-chip silicon single-photon avalanche diodes (SPADs) provide a viable solution as they can be seamlessly integrated with photonic components, and operated with high efficiencies and low dark counts at temperatures achievable with thermoelectric cooling. …
A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $μ$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $μ$m x 15 $μ$m x 18 $μ$m. Electrons generated in the absorption region are efficiently transported by drift to a central active avalanche region with a diameter of 2 $μ$m. At the operating voltage, the active region contains a spherically uniform field peak, enabling the multiplication of electrons originating from all corners of the device. The advantages of the SPAD architecture include hig…
Avalanche photodiode based single photon detectors, as crucial and practical components, are widely used in quantum key distribution (QKD) systems. For effective detection, most of these SPDs are operated in the gated mode, in which the gate is added to obtain high avalanche gain, and is removed to quench the avalanche. The avalanche transition region (ATR) is a certain existence in the process of adding and removing the gate. We first experimentally investigate the characteristic of the ATR, including in the commercial SPD and high-speed SPD, and then propose an ATR attack to control the dete…
We report on the first demonstration of fluorescence detection using single-photon avalanche photodiodes (SPADs) monolithically integrated with a microfabricated surface ion trap. The SPADs are positioned below the trapping positions of the ions, and designed to detect 370 nm photons emitted from single $^{174}$Yb$^+$ and $^{171}$Yb$^+$ ions. We achieve an ion/no-ion detection fidelity for $^{174}$Yb$^+$ of 0.99 with an average detection window of 7.7(1) ms. We report a dark count rate as low as 1.2 kHz at room temperature operation. The fidelity is limited by laser scatter, dark counts, and h…
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Re…
InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near-infrared (NIR) including the fibre communication bands (1.31/1.55 $μ$m). However, to suppress afterpulse noise due to trapped avalanche charge, they must be gated with MHz repetition frequencies, thereby severely limiting the count rate in NIR applications. Here we show gating frequencies for InGaAs-APDs well beyond 1 GHz. Using a self-differencing technique to sense much weaker avalanches, we reduce drastically afterpulse noise. At 1.25 GHz, we obtain a detection efficiency of 10.8% with an afterpulse p…
We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and -30°C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the "charge persistence" effect, wh…
We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g. 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for sho…
We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes; hybrid detection systems based on sum-frequency generation and Si APDs; and SSPDs (superconducting single photon detectors), for telecom wavelengths; as well as SiPM (Silicon photomultiplier) detectors operating in the visible regime.
We characterize a near-infrared single-photon detector based on an InGaAs/InP avalanche photodiode and the self-differencing post-processing technique. It operates at gate rates of 200 MHz and higher. The compact, integrated design employs printed circuit boards and features a semiconductor-based self-differencing subtraction implemented with a fully differential amplifier. At a single-photon detection efficiency of 6.4%, the detector has a dark count probability of 9x10^-7 per gate, an afterpulse probability of 6.3% per detection event, a detection time jitter of 150 ps, and a dead time of 5 …
