arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0908.2230quant-ph
收藏

实用快门速率InGaAs/InP单光子雪崩光电二极管

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

Jun Zhang, Rob Thew, Claudio Barreiro, Hugo Zbinden

摘要:

提出了一种基于InGaAs/InP单光子雪崩光电二极管(SPADs),结合正弦选通和自差分技术的高速近红外单光子探测方法。在921 MHz的选通频率和-30 ℃的温度下,我们实现了:探测效率为9.3%,暗计数概率为2.8 $\times10^{-6}$ ns $^{-1}$,而后脉冲概率为1.6 $\times10^{-4}$ ns $^{-1}$,具有10 ns的“计数关闭时间”设置。原则上,SPAD的最大计数率可以接近100 MHz,这可以显著提高各种应用的性能。

英文摘要:

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑