InGaAs/InP单光子探测器，在1550 nm处的探测效率为60%
InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm
摘要：
InGaAs/InP单光子探测器（SPD）在近红外光子计数中有着广泛的应用。光子探测效率（PDE）是SPD表征的最重要参数之一，因此提高PDE在工业发展和学术研究中始终发挥着核心作用。在这里，我们提出了高频门控InGaAs/InP SPD的PDE高达60%，在1550 nm的实现。一方面，我们优化了InGaAs/InP单光子雪崩二极管的结构设计和器件制作，增加了介质金属反射层，使入射光子的吸收效率相对提高了约20%。另一方面，我们开发了一个单片读出电路的弱雪崩提取，以尽量减少寄生电容的抑制后脉冲效应。采用1.25 GHz正弦波选通，优化了选通幅度和工作温度，SPD的PDE达到60%，暗计数率（DCR）为340 kcps。对于实际应用，给定3 kcps DCR作为参考，PDE达到约40% PDE，后脉冲概率为5.5%，这可以显著提高基于近红外SPD的应用的性能。
英文摘要：
InGaAs/InP single-photon detectors (SPDs) are widely used for near-infrared photon counting in practical applications. Photon detection efficiency (PDE) is one of the most important parameters for SPD characterization, and therefore increasing PDE consistently plays a central role in both industrial development and academic research. Here we present the implementation of high-frequency gating InGaAs/InP SPD with a PDE as high as 60% at 1550 nm. On one hand, we optimize the structure design and device fabrication of InGaAs/InP single-photon avalanche diode with an additional dielectric-metal reflection layer to relatively increase the absorption efficiency of incident photons by ~ 20%. On the other hand, we develop a monolithic readout circuit of weak avalanche extraction to minimize the parasitic capacitance for the suppression of the afterpulsing effect. With 1.25 GHz sine wave gating and optimized gate amplitude and operation temperature, the SPD is characterized to reach a PDE of 60% with a dark count rate (DCR) of 340 kcps. For practical use, given 3 kcps DCR as a reference the PDE reaches ~ 40% PDE with an afterpulse probability of 5.5%, which can significantly improve the performance for the near-infrared SPD based applications.
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