InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization. The parameters of photon detection efficiency and dark count rate highly depend on the variables of absorption layer thickness, multiplication layer thickness, excess bias voltage and temperature. By evaluating the decoy-state QKD performance, the variables for SPAD design and operation can be globally optimized. Such optimization from the perspective of specific applications can provide an effective approach to design high-performance InGaAs/InP SPADs.
We report a 2 GHz operation of InGaAs avalanche photodiodes for efficient single photon detection at telecom wavelengths. Employing a self-differencing circuit that incorporates tuneability in both frequency and arm balancing, extremely weak avalanches can now be sensed so as to suppress afterpulsing. The afterpulse probability is characterized as 4.84% and 1.42% for a photon detection efficiency of 23.5% and 11.8%, respectively. The device will further increase the secure bit rate for fiber wavelength quantum key distribution.
We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function $g^{(2)}$ of the emission from a diode laser with a single detector which works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quan…
Afterpulsing noise in InGaAs/InP single photon avalanche photodiodes (APDs) is caused by carrier trapping and can be suppressed successfully through limiting the avalanche charge via sub-nanosecond gating. Detection of faint avalanches requires an electronic circuit that is able to effectively remove the gate-induced capacitive response while keeping photon signals intact. Here we demonstrate a novel ultra-narrowband interference circuit (UNIC) that can reject the capacitive response by up to 80 dB per stage with little distortion to avalanche signals. Cascading two UNIC's in a readout circuit…
We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using CMOS (complementary metal oxide semiconductor) technology guaranteeing long-term stability, reliability and compactness. In the free-running mode we find a single photon detection efficiency of 10% with <2kHz of noise.
We report a demonstration of quantum key distribution (QKD) at GHz clock rates with InGaAs avalanche photodiodes (APDs) operating in a self-differencing mode. Such a mode of operation allows detection of extremely weak avalanches so that the detector afterpulse noise is sufficiently suppressed. The system is characterized by a secure bit rate of 2.37 Mbps at 5.6 km and 27.9 kbps at 65.5 km when the fiber dispersion is not compensated. After compensating the fiber dispersion, the QKD distance is extended to 101 km, resulting in a secure key rate of 2.88 kbps. Our results suggest that InGaAs APD…
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Re…
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can s…
Quantum key distribution (QKD) at telecom wavelengths (1260-1625nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, indium gallium arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize…
We present an active quenching application specific integrated circuit (ASIC), for use in conjunction with InGaAs/InP avalanche photodiodes (APDs), for 1550 nm single-photon detection. To evaluate its performance, we first compare its operation with that of standard quenching electronics. We then test 4 InGaAs/InP APDs using the ASIC, operating both in the free-running and gated modes, to study more general behavior. We investigate not only the standard parameters under different working conditions but also parameters such as charge persistence and quenching time. We also use the multiple trap…
We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating and active reset. We have shown when such solutions are beneficial from the key distribution point of view and enough to use a simple scheme with a snatching comparator. We have also proposed a precise method for measuring the afterpulse and presented a model describing the non-markovian dynamic of this effect. We have demonstrated that our afterpulsing mea…
We implement an InGaAs/InP single-photon avalanche diode (SPAD) for single-photon detection with the fastest gating frequency reported so far, of 2.23 GHz, which approaches the limit given by the bandwidth of the SPAD - 2.5 GHz. We propose a useful way to characterize the afterpulsing distribution for rapid gating that allows for easy comparison with conventional gating regimes. We compare the performance of this rapid gating scheme with free-running detector and superconducting single-photon detector (SSPD) for the coherent one-way quantum key distribution (QKD) protocol. The rapid gating sys…
InGaAs/InP-based semiconductor avalanche photodiode are usually employed for single-photon counting at telecom wavelength. However they are affected by afterpulsing which limits the diode performance. Recently, Princeton Lightwave has commercialised a diode integrating monolithically a feedback resistor. This solution effectively quenches the avalanche and drastically reduces afterpulsing. Here, we report the development and characterization of a detector module based on this diode, implementing an active hold-off circuit which further reduces the afterpulsing and notably improves the detector…
We present a method designed to efficiently extract optical signals from InGaAs avalanche photodiodes (APDs) operated in gated mode. In particular, our method permits an estimation of the fraction of counts which actually results from the signal being measured, as opposed to being produced by noise mechanisms, specifically by afterpulsing. Our method in principle allows the use of InGaAs APDs at high detection efficiencies, with the full operation bandwidth, either with or without resorting to the application of a dead time. As we show below, our method can be used in configurations where afte…
Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attac…
InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable and user-friendly tabletop InGaAs/InP single-photon detector system operating at a 1.25 GHz gate rate that fully integrates functions for controlling and optimizing SPAD performance. We characterize the key parameters of the detector system and test the long-term stability of the system for continuous operation of 75 hours. The detector system can substantially enhance QKD perf…
InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In…
InGaAs/InP single-photon detectors (SPDs) are widely used for near-infrared photon counting in practical applications. Photon detection efficiency (PDE) is one of the most important parameters for SPD characterization, and therefore increasing PDE consistently plays a central role in both industrial development and academic research. Here we present the implementation of high-frequency gating InGaAs/InP SPD with a PDE as high as 60% at 1550 nm. On one hand, we optimize the structure design and device fabrication of InGaAs/InP single-photon avalanche diode with an additional dielectric-metal re…
InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near-infrared (NIR) including the fibre communication bands (1.31/1.55 $μ$m). However, to suppress afterpulse noise due to trapped avalanche charge, they must be gated with MHz repetition frequencies, thereby severely limiting the count rate in NIR applications. Here we show gating frequencies for InGaAs-APDs well beyond 1 GHz. Using a self-differencing technique to sense much weaker avalanches, we reduce drastically afterpulse noise. At 1.25 GHz, we obtain a detection efficiency of 10.8% with an afterpulse p…
We report on the first realization of time-dependent quantum detector tomography for commercially available InGaAs avalanche photo detectors. For the construction of appropriate time-dependent POVMs from experimentally measured data, we introduce a novel scheme to calculate the weight of the regularization term based on the amount of measured data. We compare our POVM-based results with the theoretical predictions of the previously developed model by Gouzien et al. In contrast to our measurement-based construction of a time-dependent POVM for photon detectors, this previous investigation exten…
The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling. The best one yields a dark count probability of $% 2.8\cdot 10^{-5}$ per gate (2.4 ns) at a detection efficiency of 10% and a temperature of -60C. The afterpulse probability and the timing jitter are also studied. The results obtained are compared with those of other papers and applied to the simulation of a quantum key distribution system. An error rate of 10% would be obtained after 54 kilometers.
We present a free-running single photon detector for telecom wavelengths based on a negative feedback avalanche photodiode (NFAD). A dark count rate as low as 1 cps was obtained at a detection efficiency of 10%, with an afterpulse probability of 2.2% for 20 μs of deadtime. This was achieved by using an active hold-off circuit and cooling the NFAD with a free-piston stirling cooler down to temperatures of -110${^o}$C. We integrated two detectors into a practical, 625 MHz clocked quantum key distribution system. Stable, real-time key distribution in presence of 30 dB channel loss was possible, y…
We characterize a near-infrared single-photon detector based on an InGaAs/InP avalanche photodiode and the self-differencing post-processing technique. It operates at gate rates of 200 MHz and higher. The compact, integrated design employs printed circuit boards and features a semiconductor-based self-differencing subtraction implemented with a fully differential amplifier. At a single-photon detection efficiency of 6.4%, the detector has a dark count probability of 9x10^-7 per gate, an afterpulse probability of 6.3% per detection event, a detection time jitter of 150 ps, and a dead time of 5 …
In this work we investigate the probabilities of detecting single- and multi-photon coherent states on InGaAs/InP sine-gated and free-run single-photon avalanche diodes. As a result, we conclude that multi-photon state detection cannot be regarded as independent events of absorption of individual single-photon states. However, if a greater number of states are one- and two-photon, then an Independent model is permissible. We conclude that physical processes must occur in the diode structure, determining the correlation when several photons are absorbed simultaneously. We present two models tha…
We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate wid…
Fast gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high bit rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system or even an entire QKD network. Here, we investigate the behavior of a gigahertz-gated, self-differencing InGaAs APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modelling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche prob…
We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a large temperature range, and an active hold-off circuit implemented in a field programmable gate array is applied to further suppress the afterpulsing contribution. The key parameters of the free-running SPD including photon detection efficiency (PDE), dark count rate (DCR), afterpulse probability, and maximum count rate (MCR) are dedicatedly optimized for li…
High-frequency gating InGaAs/InP single-photon detectors (SPDs) are widely used for applications requiring single-photon detection in the near-infrared region such as quantum key distribution. Reducing SPD size is highly desired for practical use, which is favorable to the implementation of further system integration. Here we present, to the best of our knowledge, the most compact high-frequency sine wave gating (SWG) InGaAs/InP SPD. We design and fabricate an InGaAs/InP single-photon avalanche diode (SPAD) with optimized semiconductor structure, and then encapsulate the SPAD chip and a mini-t…
We present a compact and lightweight 1.5 μm lidar using a free-running single-photon detector (SPD) based on a multi-mode fiber (MMF) coupling InGaAs/InP negative feedback avalanche diode. The ultimate light detection sensitivity of SPD highly reduces the power requirement of laser, whilst the enhanced collection efficiency due to MMF coupling significantly reduces the volume and weight of telescopes. We develop a specific algorithm for the corrections of errors caused by the SPD and erbium-doped fiber amplifier to extract accurate backscattering signals. We also perform a comparison between s…
InGaAs single-photon avalanche photodiodes (APDs) are key enablers for high-bit rate quantum key distribution. However, the deviation of such detectors from ideal models can open side-channels for an eavesdropper, Eve, to exploit. The phenomenon of backflashes, whereby APDs reemit photons after detecting a photon, gives Eve the opportunity to passively learn the information carried by the detected photon without the need to actively interact with the legitimate receiver, Bob. Whilst this has been observed in slow-gated detectors, it has not been investigated in fast-gated APDs where it has bee…
Single photon avalanche diodes (SPADs) are the most commercially diffused solution for single-photon counting in quantum key distribution (QKD) applications. However, the secondary photon emission, arising from the avalanche of charge carriers during a photon detection, may be exploited by an eavesdropper to gain information without forcing errors in the transmission key. In this paper, we characterise such backflash light in gated InGaAs/InP SPADs, and its spectral and temporal characterization for different detector models and different operating parameters. We qualitatively bound the maximu…
It is challenging to implement genuine free running single photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for the signals from a negative feedback avalanche diode (NFAD) which allows useful operation of these devices at a temperature of 193 K and results in very low dark counts (~100 CPS), good time jitter (~30 ps), and good DE (~10%). We characterized two NFADs with a time correlation method using photons generated from weak coherent pulses (WCP) and photon pairs …
In this paper, we proposed an experimental implementation of quantum random number generator(QRNG) with inherent randomness of quantum tunneling effect of electrons. We exploited InGaAs/InP diodes, whose valance band and conduction band shared a quasi-constant energy barrier. We applied a bias voltage on the InGaAs/InP avalanche diode, which made the diode works under Geiger mode, and triggered the tunneling events with a periodic pulse. Finally, after data collection and post-processing, our quantum random number generation rate reached 8Mb/s, and final data was verified by NIST test and Dieh…
Previously, we built up a set of photon-free quantum random number generator(QRNG) with InGaAs single photon avalanche diodes. We exploited the stochastic property of quantum tunneling effect. Here, we utilized tunneling signals in Si diodes to implement quantum random number generator. In our experiment, instead of applying periodic pulses between the diode as we did in the InGaAs QRNG, we applied fixed voltage and detect time intervals between adjacent tunneling signals, as random source. This Si QRNG has a high performance in the randomness of its raw data and almost post-processing-free. F…
We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g. 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for sho…
We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes; hybrid detection systems based on sum-frequency generation and Si APDs; and SSPDs (superconducting single photon detectors), for telecom wavelengths; as well as SiPM (Silicon photomultiplier) detectors operating in the visible regime.
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0, 0.2, 0.4 and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of ~4.25 meV found from a 15nm quantum well. The width of the emission from the 15nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown an…
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pumping conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pumping scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, c…
We demonstrate efficient generation of collinearly propagating, highly nondegenerate photon pairs in a periodically-poled lithium niobate cw parametric downconverter with an inferred pair generation rate of 1.4*10^7/s/mW of pump power. Detection of an 800-nm signal photon triggers a thermoelectrically-cooled 20%-efficient InGaAs avalanche photodiode for the detection of the 1600-nm conjugate idler photon. Using single-mode fibers as spatial mode filters, we obtain a signal-conditioned idler-detection probability of about 3.1%.
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously re…
Single photon detectors have dark count rates that depend strongly on the bias level for detector operation. In the case of weak light sources such as novel lasers or single-photon emitters, the rate of counts due to the light source can be comparable to that of the detector dark counts. In such cases, a characterization of the statistical properties of the dark counts is necessary. The dark counts are often assumed to follow a Poisson process that is statistically independent of the incident photon counts. This assumption must be validated for specific types of photodetectors. In this work, w…
Single photon detectors are important for a wide range of applications each with their own specific requirements, which makes necessary the precise characterization of detectors. Here, we present a simple and accurate methodology of characterizing dark count rate, detection efficiency, and after-pulsing in single photon detectors purely based on their counting statistics. We demonstrate our new method on a custom-made, free-running single photon detector based on an InGaAs based avalanche photo diode (APD), though the methodology presented here is applicable for any type of single photon detec…
We report the first gigahertz clocked decoy-protocol quantum key distribution (QKD). Record key rates have been achieved thanks to the use of self-differencing InGaAs avalanche photodiodes designed specifically for high speed single photon detection. The system is characterized with a secure key rate of 1.02 Mbit/s for a fiber distance of 20 km and 10.1 kbit/s for 100 km. As the present advance relies upon compact non-cryogenic detectors, it opens the door towards practical and low cost QKD systems to secure broadband communication in future.
The detection sensitivity (DS) of the commercial single-photon-receiver based on InGaAs gate-mode avalanche photodiode is estimated. Instalment of a digital-blanking-system (DBS) to reduce dark current makes the difference between DS, which is an efficiency of the detector during its open-gate/active state, and the total/overall detection efficiency (DE). By numerical simulations, it is found that the average number of light-pulses, blanked by DBS, following a registered pulse is 0.333. DS is estimated at 0.216, which can be used for estimating DE for an arbitrary photon arriving rate and a ga…
Using the correlated signal and idler photon pairs generated in a dispersion shifted fiber by a pulsed pump, we measure the quantum efficiency of a InGaAs/InP avalanche photodiode-based single photon detector. Since the collection efficiency of photon pairs is a key parameter to correctly deduce the quantum efficiency, we carefully characterize the collection efficiency by studying correlation dependence of photon pairs upon the spectra of pump, signal and idler photons. This study allows us to obtain quantum efficiency of the single photon detector by using photon pairs with various kinds of …
We compare the performance of various quantum key distribution (QKD) systems using a novel single-photon detector, which combines frequency up-conversion in a periodically poled lithium niobate (PPLN) waveguide and a silicon avalanche photodiode (APD). The comparison is based on the secure communication rate as a function of distance for three QKD protocols: the Bennett-Brassard 1984 (BB84), the Bennett, Brassard, and Mermin 1992 (BBM92), and the coherent differential phase shift keying (DPSK). We show that the up-conversion detector allows for higher communication rates and longer communicati…
We demonstrate generation of high-purity photon pairs at 1560 nm in a single spatial mode from a periodically-poled KTiOPO_4 (PPKTP) waveguide. With nearly lossless spectral filtering, the PPKTP waveguide source shows approximately 80 % single-mode fiber coupling efficiency and is well suited for high-dimensional time-energy entanglement-based quantum key distribution. Using high-count-rate self-differencing InGaAs single-photon avalanche photodiodes configured with either square or sinusoidal gating, we achieve > 1 Mbit/s raw key generation with 3 bits-per-photon encoding, and, to the best of…
Reconfigurable quantum photonic processors are an essential technology for photonic quantum computing. Although most large-scale reconfigurable quantum photonic processors were demonstrated at the telecommunications C band around 1550 nm, high-performance single photon light sources utilizing quantum dots that are well-suited for photonic quantum computing operate at a variety of wavelengths. Thus, a demand exists for the compatibility of quantum photonic processors with a larger wavelength range. Silicon nitride (SiN) has a high confinement and wide transparency window, enabling compact, low-…
