通过蚀刻硅纳米锥作为抗反射层改善光电二极管性能的免光刻低成本方法
Lithography-Free, Low-Cost Method for Improving Photodiode Performance by Etching Silicon Nanocones as Antireflection Layer
摘要：
通过在光电二极管表面形成纳米锥森林作为阻挡层，提出了一种改进光电二极管性能的三步工艺。这种高产量、低成本的工艺已被证明可以将反射率降低66.1%，将量子效率提高27%，并将响应度提高25.7%。这种低成本的制造工艺可以应用于增加硅基光子器件的响应度。
英文摘要：
A three-step process has been demonstrated to improve the performance of photodiode by creating nanocone forest on the surface of photodiode as an antireflection layer. This high-throughput, low-cost process has been shown to decrease the reflectivity by 66.1%, enhance the quantum efficiency by 27%, and increase the responsivity by 25.7%. This low-cost manufacture process can be applied to increase the responsivity of silicon based photonic devices.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
