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arXiv 1302.4848physics.atom-phcond-mat.mtrl-sci
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飞秒强X射线脉冲诱导晶体X射线衍射强度的时间依赖性

Time dependence of X-ray diffraction intensity of a crystal induced by an intense femtosecond X-ray pulse

A. Leonov, D. Ksenzov, A. Benediktovitch, I. Feranchuk, U. Pietsch

摘要:

基于束缚电子速率方程和非束缚电子气动力学的Boltzmann方程,从理论上研究了强流飞秒脉冲辐照下晶体中电子密度随时间的演化以及由此产生的X射线衍射峰强度随时间的变化规律。光电离、俄歇过程、电子碰撞电离、电子-电子散射和三体复合都在速率方程组中实现。在有效电荷模型的框架内,通过引入离子中所有电子组态的截面的解析表达式,简化了速率方程数值解的算法。使用这种方法,我们评估了在光子能量为3和12 keV之间,脉冲宽度为40 fs,考虑通量为10^12 ph/脉冲的XFEL脉冲通过晶体传播期间内壳层布居和电子动能的时间依赖性(聚焦于约1 mum^2的光斑大小,该通量对应于0.6 ~ 1.6 mJ/mum^2的能量密度)。考虑到在脉冲传输过程中束缚电子密度的减小,数值分析了硅晶体中原子散射因子及其涨落随时间的演化。如果XFEL脉冲的能量密度超过1.6 mJ/mum ^2,时间积分强度会急剧下降。

英文摘要:

The time evolution of the electron density and the resulting time dependence of X-ray diffraction peak intensity in a crystal irradiated by highly intense femtosecond pulses of an XFEL is investigated theoretically on the basis of rate equations for bound electrons and the Boltzmann equation for the kinetics of the unbound electron gas that plays an essential role in the time evolution of the electron density of a crystal. The photoionization, Auger process, electron-impact ionization, electron--electron scattering, and three-body recombination have been implemented in the system of rate equations. An algorithm for the numerical solution of the rate equations was simplified by incorporating analytical expressions for the cross sections of all the electron configurations in ions within the framework of the effective charge model. Using this approach we evaluate the time dependence of the inner shell population and electronic kinetic energy during the time of XFEL pulse propagation through the crystal for photon energies between 3 and 12 keV and a pulse width of 40 fs considering a flux of 10^12 ph/pulse (focusing on a spot size of ~ 1 mum^2, this flux corresponds to a fluence ranging between 0.6 and 1.6 mJ/mum^2). The time evolution of the atomic scattering factor and its fluctuation is numerically analyzed for the case of a Silicon crystal taking into account the decrease of the bound electron density during the pulse propagation. The time integrated intensity drops dramatically if the fluence of the XFEL pulse exceeds 1.6 mJ/mum^2.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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