We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong Γ to L scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is in good agreement with the electron spin polarization expected for optical orientation at the direct gap of Ge.
The Weyl semimetal is characterized by three-dimensional linear band touching points called Weyl nodes. These nodes come in pairs with opposite chiralities. We show that the coupling of circularly polarized photons with these chiral electrons generates a Hall conductivity without any applied magnetic field in the plane orthogonal to the light propagation. This phenomenon comes about because with all three Pauli matrices exhausted to form the three-dimensional linear dispersion, the Weyl nodes cannot be gapped. Rather, the net influence of chiral photons is to shift the positions of the Weyl no…
We study the band structure modulation and spin-Hall effect of a two-dimensional heavy-hole system with $k^3$-Rashba spin-orbit coupling (RSOC), irradiated by linearly polarized light. We find that the band structure becomes anisotropic under the illumination by the light. Most remarkably, a pair of additional spin-degeneracy points (apart from $Γ$ point) emerge in the energy dispersion, the locations of which are solely determined by the strength of the amplitude of the incident light. If this degeneracy occurs around the Fermi level, the spin-Hall conductivity (SHC) exhibits a resonance. Awa…
We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin-polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, toget…
A recent scientific debate has arisen: Which processes underlie the actual ground of the valley Hall effect (VHE) in two-dimensional materials? The original VHE emerges in samples with ballistic transport of electrons due to the anomalous velocity terms resulting from the Berry phase effect. In disordered samples though, alternative mechanisms associated with electron scattering off impurities have been suggested: (i) asymmetric electron scattering, called skew scattering, and (ii) a shift of the electron wave packet in real space, called a side jump. It has been claimed that the side jump not…
The realization of the quantum anomalous Hall (QAH) effect without magnetic doping attracts intensive interest since magnetically doped topological insulators usually possess inhomogeneity of ferromagnetic order. Here, we propose a different strategy to realize intriguing QAH states arising from the interplay of light and non-magnetic disorder in two-dimensional topologically trivial systems. By combining the Born approximation and Floquet theory, we show that a time-reversal invariant disorder-induced topological insulator, known as the topological Anderson insulator (TAI), would evolve into …
We investigate the chiral electronic modes at the interface between two regions of a threefold topological semimetal, which is illuminated by left and right handed elliptically polarized waves. The radiation effects on the band structure of semimetal is analyzed by using Floquet theory. Two distinct solutions of the interface modes are found with the chirality depending on the phase of the irradiation. We also consider the anomalous Hall response which is attributed to the transition between dispersionless flat band and conic bands.
Spin currents offer a way to control static and dynamic magnetic properties, and therefore they are crucial for next-generation MRAM devices or spin-torque oscillators. Manipulating the dynamics is especially interesting within the context of photo-magnonics. In typical $3d$ transition metal ferromagnets like CoFeB, the lifetime of light-induced magnetization dynamics is restricted to about 1 ns, which e.g. strongly limits the opportunities to exploit the wave nature in a magnonic crystal filtering device. Here, we investigate the potential of spin-currents to increase the spin wave lifetime i…
Helical metals realized at the surfaces of topological insulators have recently attracted wide attention due to their potential applications in spintronics. In this paper we propose to realize helical metals through the application of THz light on common two-dimensional semiconductors and discuss their observable properties. We show that the application of circularly polarized light enables coherent manipulation of magnetization. Moreover, for a range of chemical potentials the system behaves as a helical metal, exhibiting a large anomalous Hall conductivity and associated magnetoelectric effe…
At interfaces with inversion symmetry breaking, Rashba effect couples the motion of electrons to their spin; as a result, spin-charge interconversion mechanism can occur. These interconversion mechanisms commonly exploit Rashba spin splitting at the Fermi level by spin pumping or spin torque ferromagnetic resonance. Here, we report evidence of significant photoinduced spin to charge conversion via Rashba spin splitting in an unoccupied state above the Fermi level at the Cu(111)/$α$-Bi$_{2}$O$_{3}$ interface. We predict an average Rashba coefficient of $1.72\times 10^{-10}eV.m$ at 1.98 eV above…
For monolayer transition metal chalcogenides (TMDs), electrons and excitons in different valleys can be driven to opposite directions by the Berry curvature, serving as a valley-dependent effective magnetic field. In addition to monolayer TMDs, Van der Waals heterostructures provide an attractive platform for emerging valley physics and devices with superior physics properties. Interlayer excitons in TMD heterostructures have a long valley lifetime as compared to monolayer intralayer excitons. Here we report an interlayer exciton valley polarization and valley Hall effect in MoS2/WSe2 in room …
We study theoretically and experimentally the spin pumping signals induced by the resonance of canted antiferromagnets with Dzyaloshinskii-Moriya interaction and demonstrate that they can generate easily observable inverse spin-Hall voltages. Using a bilayer of hematite/heavy metal as a model system, we measure at room temperature the antiferromagnetic resonance and an associated inverse spin-Hall voltage, as large as in collinear antiferromagnets. As expected for coherent spin-pumping, we observe that the sign of the inverse spin-Hall voltage provides direct information about the mode handedn…
Magnetic skyrmions are stable nanosized spin structures that can be displaced at low electrical current densities. Because of these properties, they have been proposed as building blocks of future electronic devices with unprecedentedly high information density and low energy consumption. The electrical detection of skyrmions via the Topological Hall Effect (THE), has so far been demonstrated only at cryogenic temperatures. Here, we report the observation of a skyrmion Topological Hall Effect near room temperature (276 K) in a mesoscopic lamella of FeGe. This region unambiguously coincides wit…
The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T'-phase of few-layer MoS2 patterned onto the 2H semiconducting p…
Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate spin Hall effect up to room temperature in bilayer graphene combined with a nonmagnetic in…
We propose an experimental realization of the Spin Hall effect in graphene by illuminating a graphene sheet on top of a substrate with circularly polarized monochromatic light. The substrate induces a controllable Rashba type spin-orbit coupling which breaks the spin-degeneracy of the Dirac cones but it is gapless. The circularly polarized light induces a gap in the spectrum and turns graphene into a Floquet topological insulator with spin dependent edge states. By analyzing the high and intermediate frequency regimes, we find that in both parameter limits, the spin-Chern number can be tuned b…
We have demonstrated the electrical generation and detection of spin polarization by the spin Hall effect (SHE) in platinum. The experiment was performed in a non-local geometry without the use of ferromagnetic materials or magnetic field. We designed a circuit that uses the SHE to convert a charge current to a spin current, and the inverse SHE to convert the spin current back into a charge signal. The experiments were carried out for temperatures from 10 K up to 290 K. We extracted the spin Hall conductivity and spin diffusion length from the data with the aid of a spin diffusion model, and f…
Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally spin Hall effect in graphene induced by MoS$_2$ proximity and for varying temperature up to room temperature. The fact that spin transport and spin …
Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi2Te2Se pla…
Symplectic connection third-order Hall effect in a room-temperature ferromagnet
Tsung-Dao Lee Institute, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University（上海交大李政道研究所，教育部人工结构与量子控制重点实验室，物理与天文学院，上海交通大学）；Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University（复旦大学理论物理与信息科学交叉中心）；School of Physics, Beihang University（北京航空航天大学物理学院）；Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, School of Information Science and Technology, ShanghaiTech University（上海科技大学信息科学与技术学院，能效与定制AI集成电路上海市工程研究中心）；Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University（同济大学物理科学与工程学院，特种人工微结构材料与技术上海市重点实验室）；Research Laboratory for Quantum Materials, Department of Applied Physics, The Hong Kong Polytechnic University（香港理工大学应用物理系，量子材料研究实验室）
A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which m…
The spin Hall angle (SHA) is a measure of the efficiency with which a transverse spin current is generated from a charge current by the spin-orbit coupling and disorder in the spin Hall effect (SHE). In a study of the SHE for a Pt$|$Py (Py=Ni$_{80}$Fe$_{20}$) bilayer using a first-principles scattering approach, we find a SHA that increases monotonically with temperature and is proportional to the resistivity for bulk Pt. By decomposing the room temperature SHE and inverse SHE currents into bulk and interface terms, we discover a giant interface SHA that dominates the total inverse SHE current…
The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realize…
In this note we summarize our recent results for the temperature dependence of transport coefficients of metallic films in the presence of spin-orbit coupling. Our focus is on (i) the spin Nernst and the thermal Edelstein effects, and (ii) the phonon skew scattering contribution to the spin Hall conductivity, which is relevant for the temperature dependence of the spin Hall angle. Depending on the parameters, the latter is expected to show a non-monotonous behavior.
We observe the signature of zero-field ground-state skyrmions in BiSb topological insulator / MnGa bi-layers by using the topological Hall effect (THE). We observe a large critical interfacial Dzyaloshinskii-Moriya-Interaction energy (5.0 pJ/m) at the BiSb/MnGa interface that can be tailored by controlling the annealing temperature of the MnGa template. The THE was observed at room temperature even under absence of an external magnetic field, which gives the strong evidence for the existence of thermodynamically stable skyrmions in MnGa/BiSb bi-layers. Our results will give insight into the ro…
Thickness-Driven Control of Room Temperature Ferrimagnetic Skyrmions and their Topological Hall signature in GdFe Single Layers
Indian Institute of Technology Hyderabad（印度理工学院海德拉巴分校）；National Institute for Materials Science（国立材料研究所）；Tata Institute of Fundamental Research（塔塔基础研究所）
National University of Science and Technology “MISIS”（国立科技大学 MISIS）；Institute for Physics of Microstructures, Russian Academy of Sciences（俄罗斯科学院微观物理研究所）；Moscow Institute of Physics and Technology（莫斯科物理技术学院）；National Research Lobachevsky State University of Nizhny Novgorod（下诺夫哥罗德国立研究罗巴切夫斯基大学）
Antiferromagnetic Weyl semimetal Mn$_3$Sn has shown to generate strong intrinsic anomalous Hall effect (AHE) at room temperature, due to large momentum-space Berry curvature from the time-reversal symmetry breaking electronic bands of the Kagome planes. This prompts us to investigate intrinsic spin Hall effect, a transverse phenomenon with identical origin as the intrinsic AHE. We report inverse spin Hall effect experiments in nanocrystalline Mn$_3$Sn nanowires at room temperature using spin absorption method which enables us to quantitatively derive both the spin diffusion length and the spin…
Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin-Hall magnetoresistance in both p-Si and n-Si at room temperature and it is an order of magnitu…
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exce…
Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession ex…
Considering metallic films at room temperature, we present the first theoretical study of the spin Nernst and thermal Edelstein effects which takes into account dynamical spin-orbit coupling, i.e., direct spin-orbit coupling with the vibrating lattice (phonons) and impurities. This gives rise to two novel processes, namely a dynamical Elliott-Yafet spin relaxation and a dynamical side-jump mechanism. Both are the high-temperature counterparts of the well-known $T = 0$ Elliott-Yafet and side-jump, central to the current understanding of the spin Hall, spin Nernst and Edelstein effects at low $T…
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with th…
Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimetals with strong spin-orbit coupling, broken inversion symmetry and novel spin texture are predicted to exhibit a large spin Hall effect that can efficiently convert the charge current to a spin current. Here we report the direct experimental observation of a large spin Hall and inverse spin Hall effects in Weyl semimetal WTe2 at room temperature obeying Onsager reciprocity relation. We demonstrate the detection of th…
Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall effect (AHE), anisotropic magnetoresistance (AMR), and other spin-dependent transport phenomena. However, SOI in FM has been ignored in ISHE studies in spintronic devices, and the possibility of "self-induced ISHE" in FM has never been explored until now. In this paper, we demonstrate the experimental verification of ISHE in FM. We found that the spin-pumpin…
A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si1-xMnx (X = 0.35) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localiz…
