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arXiv 2005.07249cond-mat.mes-hall

Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature

C. K. Safeer, Josep Ingla-Aynés, Nerea Ontoso, Franz Herling, Wenjing Yan, Luis E. Hueso, Fèlix Casanova

英文摘要:

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate spin Hall effect up to room temperature in bilayer graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect raises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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