We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of the Transfer Matrix Approach that consider contributions from abrupt interfaces and external fields when tunneling through central barrier exists. We have included the Landé g-factor dependence on the external applied field. Also, we have calculated electron density of states and photoluminescence excitation. Variations of the electron spin-splitting energy lead to marked peculiarities in the density of states. Because the density of states is directly related to photoluminescence excitation, these peculiarities are observable by this technique.
We present a self-consistent calculation, based on the global coherent tunnelling model, and show that structural asymmetry of double barrier resonant tunnelling structures significantly modifies the current-voltage characteristics compared to the symmetric structures. In particular, a suitably designed asymmetric structure can produce much larger peak current and absolute value of the negative differential conductivity than its commonly used symmetric counterpart.
We present an explicit solution of carrier and field distributions in abrupt PN junctions under equilibrium. An accurate logarithmic numerical method is implemented and results are compared to the analytical solutions. Analysis of results shows reasonable agreement with numerical solution as well as the depletion layer approximation. We discuss extensions to the asymmetric junctions. Approximate relations for differential capacitance and I-V characteristics are also found under non-zero external bias.
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection …
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can…
Based on the dielectric continuum model, we calculated the phonon assisted tunneling (PAT) current of general double barrier resonant tunneling structures (DBRTSs) including both symmetric and antisymmetric ones. The results indicate that the four higher frequency interface phonon modes (especially the one which peaks at either interface of the emitter barrier) dominate the PAT processes, which increase the valley current and decrease the PVR of the DBRTSs. We show that an asymmetric structure can lead to improved performance.
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the…
Using an approach to open quantum systems based on the effective non-Hermitian Hamiltonian, we fully describe transport properties for a paradigmatic model of a coherent quantum transmitter: a finite sequence of square potential barriers. We consider the general case of asymmetric external barriers and variable coupling strength to the environment. We demonstrate that transport properties are very sensitive to the degree of opening of the system and determine the parameters for maximum transmission at any given degree of asymmetry. Analyzing the complex eigenvalues of the non-Hermitian Hamilto…
We develop a theory for the current-voltage characteristics of diffusive superconductor-normal metal-superconductor Josephson junctions with resistive interfaces and the distance between the electrodes smaller than the superconducting coherence length. The theory allows for a quantitative analytical and numerical analysis in the whole range of the interface transparencies and asymmetry. We focus on the regime of large interface resistance compared to the resistance of the normal region, when the electron-hole dephasing in the normal region is significant and the finite length of the junction p…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence i…
Magnetic barriers in two-dimensional electron gases are shifted in B space by homogeneous, perpendicular magnetic fields. The magnetoresistance across the barrier shows a characteristic asymmetric dip in the regime where the polarity of the homogeneous magnetic field is opposite to that one of the magnetic barrier. The measurements are in quantitative agreement with semiclassical simulations, which reveal that the magnetoresistance originates from the interplay of snake orbits with E x B drift at the edges of the Hall bar and with elastic scattering.
We propose a spin cell based on photon-assisted tunneling through a conventional semiconductor barrier. The Dresselhaus spin-orbit interaction is included to break the spin rotation symmetry. Due to the in-plane electric field induced asymmetric momentum distribution in one lead, continuous flows of spin currents are driven through a barrier by a AC field. The net charge current remains zero. The spin current via photon-assisted tunneling can be readily adjusted via tuning the AC frequency or the in-plane electric field. This device may function as an ideal spin cell to supply spin currents in…
Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels at the depletion-induced edges of a gated two-dimensional electron system. For a sufficiently high barrier a typical current-voltage characteristic is found to be strongly asymmetric and include, apart from a positive tunneling branch, the negative branch that corresponds to the current overflowing the barrier. We establish the barrier height depends linearly…
Asymmetric i/V curves with respect to the polarity of the voltage bias were observed in the Hg-Au junctions containing bilayers of alkanethiols of different chain length. Larger current resulted when a negative bias was applied to the metal carrying a longer chain alkanethiol monolayer. This behavior is simulated using a single molecule junction model, within the frameworks of the extended Huckel (EH) model and the nonequilibrium Green's function formalism at the Hartree Fock level (NEGF-HF). Qualitative agreement with the experimental results with respect to the magnitude and sign of this asy…
We show that the presence of a side-attached state strongly modifies the transmission through a one-dimensional double-barrier system in the window of wavevectors around the Fano antiresonance. Specifically, the interplay between the Fano interference and the size quantization inside the structure gives rise to narrow resonant peaks in the transmission coefficient. The height of the peaks may become close to unity (perfect transmission) even for an asymmetric setup with strong barriers, where the transmission coefficient in the absence of the Fano state is strongly suppressed at all other wave…
We describe a new regime of magnetotransport in two dimensional electron systems in the presence of a narrow potential barrier imposed by external gates. In such systems, the Landau level states, confined to the barrier region in strong magnetic fields, undergo a deconfinement transition as the field is lowered. We present transport measurements showing Shubnikov-de Haas (SdH) oscillations which, in the unipolar regime, abruptly disappear when the strength of the magnetic field is reduced below a certain critical value. This behavior is explained by a semiclassical analysis of the transformati…
In the present work, we were able to identify and characterize a new source of in-plane optical anisotropies (IOAs) occurring in asymmetric DQWs; namely a reduction of the symmetry from $D_{2d}$ to $C_{2v}$ as imposed by asymmetry along the growth direction. We report on reflectance anisotropy spectroscopy (RAS) of double GaAs quantum wells (DQWs) structures coupled by a thin ($<2$ nm) tunneling barrier. Two groups of DQWs systems were studied: one where both QWs have the same thickness (symmetric DQW) and another one where they have different thicknesses (asymmetric DQW). RAS measures the IOA…
The kinetic transport of electrons through graphene magnetic barriers is studied theoretically in presence of an external time harmonic scalar potential. The transmission coefficients are calculated in the framework of the non-perturbative Floquet theory using transfer matrix method. The time dependent scalar potential is found to suppress the usual Fabry-Perot oscillations occurring in the transmission through a constant vector potential barrier (corresponding to two oppositely directed delta-function magnetic barriers). Two types of asymmetric Fano resonances (FR) are noted and are discussed…
We investigate theoretically the transmission of electrons through a pair of δ- function magnetic barriers in graphene in presence of external monochromatic, linearly polarised and CW laser field. The transmission coefficients are calculated in the framework of non-perturbative Floquet theory using the transfer matrix method. It is noted that the usual Fabry-Perot oscillations in transmission through the graphene magnetic barriers with larger inter barrier separation takes the shape of beating oscillations in presence of the external laser field. The laser assisted transmission spectra are als…
The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression…
We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced transition into a decoupled bilayer. In addition, the increasing field transfers electrons from the triangular to rectangular well and, at high enough field value, the triangular well is emptied. Consequ…
Klein tunneling and conductance for Dirac fermions in ABC-stacked trilayer graphene (ABC-TLG) through symmetric and asymmetric double potential barriers are investigated using the two and six-band continuum model. Numerical results for our system show that the transport is sensitive to the height, the width and the distance between the two barriers. Klein paradox at normal incidence and resonant features at non-normal incidence in the transmission result from resonant electron states in the wells or hole states in the barriers and strongly influence the ballistic conductance of the structures.
An analysis of electron transport in graphene is presented in the presence of various arrangement of delta-function like magnetic barriers. The motion through one such barrier gives an unusual non specular refraction leading to asymmetric transmission. The symmetry is restored by putting two such barriers in opposite direction side by side. Periodic arrangements of such barriers can be used as Bragg reflectors whose reflectivity has been calculated using a transfer matrix formalism. Such Bragg reflectors can be used to make resonant cavities. We also analyze the associated band structure for t…
We report an investigation of electron conduction in oligophenyl based double barrier molecular device. We have carried out analytical calculations and numerical simulations on isolated molecules, consisting of aromatic "pi" conjugated system made up of three phenyl rings separated by insulator groups -CH_{2}-, -SiH_{2}-, -GeH_{2}- and -SnH_{2}-. We show analytically as well as numerically that when the two insulator groups are different an asymmetric electron transport in the presence of external electric field is possible,thus resembling a diode which allows one way electron transport.
The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free electron model. We show that they modify the "conventional" bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add {\em antisymmetric} terms to the perpendicular torque ($\propto V$ and $\propto j_e|V|$), while the interf…
It is shown that potential barriers in bilayer graphene (BLG) and monolayer transition metal dichalcogenides (TMDs) can split a valley unpolarized incident current into reflected and transmitted currents with opposite valley polarization. Valley asymmetric transmission inevitably occurs because of the low symmetry of the total Hamiltonian and when total external reflection occurs the transmission is 100% valley polarized in BLG and 100% spin and valley polarized in TMDs, except for exponentially small corrections. By adjusting the potential, 100% polarization can be obtained regardless of the …
We demonstrate how robust entanglement of quantum dot molecular system in a voltage controlled junction can be generated. To improve the quantum information characteristics of this system, we propose an applicable protocol which contains the implementation of asymmetric quantum dots as well as engineering reservoirs. Quantum dots with tunable energy barriers can provide asymmetric coupling coefficients which can be tuned by gap voltages. Also by engineering reservoirs, superconductors can be used as leads in a biased-voltage junction. The high-controllability characteristics of system supplies…
Here we present a theoretical analysis of inelastic effects on thermoelectric properties of molecular-scale junction in both linear and nonlinear response regimes. Considered device is composed of molecular quantum dot (with discrete energy levels) asymmetrically connected to metallic electrodes (treated within the wide-band approximation) via potential barriers, where molecular vibrations are modeled as dispersionless phonon excitations. Nonperturbative computational scheme, used in this work, is based on Green's function theory within the framework of polaron transformation (GFT-PT) which ma…
We use the Hartree-Fock method to study an interacting one-dimensional electron system on a finite wire, partially depleted at the center by a smooth potential barrier. A uniform one-Tesla Zeeman field is applied throughout the system. We find that with the increase in the potential barrier, the low density electrons under it go from a non-magnetic state to an antiferromagnetic state, and then to a state with a well-localized spin-aligned region isolated by two antiferromagnetic regions from the high density leads. At this final stage, in response to a continuously increasing barrier potential…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other h…
The reversal of the magnetization of crystals of molecular magnets that have a large spin and high anisotropy barrier generally proceeds below the blocking temperature by quantum tunneling. This is manifested as a series of controlled steps in the hysteresis loops at resonant values of the magnetic field where energy levels on opposite sides of the barrier cross. An abrupt reversal of the magnetic moment of the entire crystal can occur instead by a process commonly referred to as a magnetic avalanche, where the molecular spins reverse along a deflagration front that travels through the sample …
By taking into account the full four band energy spectrum, we calculate the transmission probability and conductance of electrons across symmetric and asymmetric double potential barrier with a confined interlayer potential difference in bilayer graphene. For energies less than the interlayer coupling γ_{1}, E<γ_1, we have one channel for transmission which exhibits resonances, even for incident particles with energies less than the strength of barriers, E < U_j, depending on the double barrier geometry. In contrast, for higher energies E > γ_{1}, we obtain four possible ways for transmission …
The Dirac equation is used to describe oblique spin-conserving and spin-flip reflections of relativistic electrons from a one-dimensional potential barrier in a vacuum. When an electron hits the barrier from an oblique direction, its spin-up and spin-down states have different energies due to the spin-orbit interaction and the fact that the system has a structural inversion asymmetry. When the electron is reflected in an elastic spin-conserving process, incoming and outgoing angles are the same. If an elastic reflection is a spin-flip process, the outgoing angle is different from the incoming …
We demonstrate symmetric wave propagations in asymmetric nonlinear quantum systems. By solving the nonlinear Schördinger equation, we first analytically prove the existence of symmetric transmission in asymmetric systems with a single nonlinear delta-function interface. We then point out that a finite width of the nonlinear interface region is necessary to produce non-reciprocity in asymmetric systems. However, a geometrical resonant condition for breaking non-reciprocal propagation is then identified theoretically and verified numerically. With such a resonant condition, the nonlinear interfa…
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field.…
