An analysis of electron transport in graphene is presented in the presence of various arrangement of delta-function like magnetic barriers. The motion through one such barrier gives an unusual non specular refraction leading to asymmetric transmission. The symmetry is restored by putting two such barriers in opposite direction side by side. Periodic arrangements of such barriers can be used as Bragg reflectors whose reflectivity has been calculated using a transfer matrix formalism. Such Bragg reflectors can be used to make resonant cavities. We also analyze the associated band structure for the case of infinite periodic structures.
We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barri…
Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other h…
Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer graphene onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior …
In the case of the strongly deformed graphene, gapless graphene may turn to gapped graphene at the critical deformation. We find that, like semi-massless fermions, electrons in the deformed graphene, at the critical point, mimic the dispersions of the massless fermions in one direction and the massive fermions in the other. Our predicted dispersion formula is the generalization of the previously predicted formula. The behavior of the particle-like semi-massless fermions tunneling through a gate barrier is contrasted with that of the (pure) massless fermions tunneling through a gate barrier in …
Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based numerical approach, which is developed for calculating transmission and reflection coefficients with a dynamically-tunable (time-dependent bias field) barrier-potential profile, are compared with those of both an analytical model for a static square-potential barrier and a perturbation theory using Wentzel-Kramers-Brillouin (WKB) approximation. For a biased barrie…
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g. fringe fields, etc.), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between…
We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is…
The electronic properties of one-dimensional graphene superlattices strongly depend on the atomic size and orientation of the 1D external periodic potential. Using a tight-binding approach, we show that the armchair and zigzag directions in these superlattices have a different impact on the renormalization of the anisotropic velocity of the charge carriers. For symmetric potential barriers, the velocity perpendicular to the barrier is modified for the armchair direction while remaining unchanged in the zigzag case. For asymmetric barriers, the initial symmetry between the forward and backward …
We investigated the vacuum potential barriers of various graphene edges terminated with hydrogen, oxygen, hydroxyl group and ether group respectively. It is found that the exchange-correlation potential correction is significant to the edge structures with electronegativity higher than carbon. The correction leads to the local work function decreased by more than 1. eV for the O terminated edge, while the local work function of H and OH terminated edges remain unchanged.
Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a tunnel barrier, with Al2O3 and MgO used most widely as barrier materials. However, the requirement to make these barriers sufficiently thin often leads to pinholes and low contact resistances which in turn results in low spin injection efficiencies, typically 5% at room temperature, due to the so-called resistance mismatch problem. Here we demonstrate an altern…
Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. A…
We study the effect of uniaxial strain on the transmission and the conductivity across a strain-induced barrier in graphene. At variance with conventional studies, which consider sharp barriers, we consider a more realistic, smooth barrier, characterized by a nonuniform, continuous strain profile. Our results are instrumental towards a better understanding of the transport properties in corrugated graphene.
Tunnel-Barrier-Engineered Ultrafast Demagnetization and Spin Transport in Graphene-Based Heterostructures
S. N. Bose National Center for Basic Sciences（S.N. 玻色基础科学国家中心）；Indian Institute of Science Education and Research Kolkata（加尔各答印度科学与教育研究所）；Uppsala University（乌普萨拉大学）
We calculated row resolved density of states, charge distribution and work function of graphene's zigzag and armchair edge (either clean or terminated alternatively with H, O or OH group). The zigzag edge saturated via OH group has the lowest work function of 3.76 eV, while the zigzag edge terminated via O has the highest work function of 7.74 eV. The angle-dependent potential barrier on the edge is fitted to a multi-pole model and is explained by the charge distribution.
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphen…
The thermal stability of graphene/graphane nanoribbons (GGNRs) is investigated using density functional theory. It is found that the energy barriers for the diffusion of hydrogen atoms on the zigzag and armchair interfaces of GGNRs are 2.86 and 3.17 eV, respectively, while the diffusion barrier of an isolated H atom on pristine graphene was only ~0.3 eV. These results unambiguously demonstrate that the thermal stability of GGNRs can be enhanced significantly by increasing the hydrogen diffusion barriers through graphene/graphane interface engineering. This may provide new insights for viable a…
We derive the local density of states from itinerant and boundary states around transport barriers and edges in graphene and show that the itinerant states lead to mesoscale undulations that could be used to probe their scattering properties in equilibrium without the need for lateral transport measurements. This finding will facilitate vetting of extended structural defects such as grain boundaries or line defects as transport barriers for switchable graphene resonant tunneling transistors. We also show that barriers could exhibit double minima and that the charge density away from highly ref…
The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO$_2$ substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. T…
The perfect transmission in graphene monolayer and the perfect reflection in Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in twisted graphene bilayer shows adjustable probability of chiral tunnelling for normal incidence: they can be changed from perfect tunnelling to partial/perfect reflection, or vice versa, by controlling either the height of…
In order to use graphene for semiconductor applications, such as transistors with high on/off ratios, a band gap must be introduced into this otherwise semimetallic material. A promising method of achieving a band gap is by introducing nanoscale perforations (antidots) in a periodic pattern, known as a graphene antidot lattice (GAL). A graphene antidot barrier (GAB) can be made by introducing a 1D GAL strip in an otherwise pristine sheet of graphene. In this paper, we will use the Dirac equation (DE) with a spatially varying mass term to calculate the electronic transport through such structur…
We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potenti…
Inspired by recent studies of various two-dimensional (2D) metals such as Au, Fe and Ag, we study the growth of two-dimensional gold patches in graphene pores by density-functional theory. We find that at room temperature gold atoms diffuse readily on top of both graphene and two-dimensional gold with energy barriers less than $0.5$ eV. Furthermore, gold atoms move without barriers from the top of graphene to its edge and from the top of 2D gold to its edge. The energy barriers are absent even at the interface of 2D gold and graphene, so that the gold atoms move effortlessly across the interfa…
We study an adiabatic quantum pump effect in a two terminal graphene device with two oscillating square electric barriers and a stationary magnetic barrier using the scattering matrix approach. The model employs the low-energy Dirac approximation and incorporates the possible existence of a finite band gap in graphene spectrum. We show that in this case valley-polarized and pure valley currents can be pumped due to the valley symmetry breaking. For a δ-function magnetic barrier we present analytical expressions for bilinear total and valley pumping responses. These results are compared to nume…
We show that the angular range of the transmission through magnetic barrier structures can be efficiently controlled in single-layer and bilayer graphenes and this renders the structure's efficient wavevector filters. As the number of magnetic barriers increases, this range shrinks, the gaps in the transmission versus energy become wider, and the conductance oscillates with the Fermi energy.
The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics
已经沉积氧化石墨烯（GO）薄片以桥接两个外延石墨烯电极之间的间隙以产生全石墨烯装置。电学测量表明，由于GO中的带隙，在石墨烯/氧化石墨烯结处存在肖特基势垒（SB）。发现势垒高度约为0.7 eV，并且在180 $^\circ$ C退火后降低，这意味着可以通过改变氧化程度来调节间隙。发现GO迁移率的下限为850 cm $^2$ /Vs，与硅相当。已经实现了图案化外延石墨烯的{ \it In situ}局部氧化。
Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrodinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between t…
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature dependence of the conductance, the modulation of Schottky barrier height Δϕ has been directly determined. We observed significant MoS2 layer number dependence of Δϕ. Moreover, we demonstrate that the device …
We study the adiabatic quantum pumping characteristics in the graphene modulated by two oscillating gate potentials out of phase. The angular and energy dependence of the pumped current is presented. The direction of the pumped current can be reversed when a high barrier demonstrates stronger transparency than a low one, which results from the Klein paradox. The underlying physics of the pumping process is illuminated.
Transmission profiles in bilayer graphene have been studied theoretically in presence of a pair of delta function magnetic barriers. Two types of asymmetric Fano resonances are discussed in connection to the electronic cloaking effect in graphene nanostructures. One arises in a static (time independent) vector barrier due to the quantum interference between the discrete hole like state inside the barrier and the electron like continuum outside. In this case the computed results for normal incidence indirectly verify that the cloaking effect is a manifestation of the chirality conservation in c…
Periodic arrays of antidots, i.e. nanoscale perforations, in graphene enable tight confinement of carriers and efficient transport barriers. Such barriers evade the Klein tunneling mechanism by being of the mass rather than electrostatic type. While all graphene antidot lattices (GALs) may support directional barriers, we show, however, that a full transport gap exists only for certain orientations of the GAL. Moreover, we assess the applicability of gapped graphene and the Dirac continuum approach as simplified models of various antidot structures showing that, in particular, the former is an…
Photon-assisted charge transport through a double barrier structure under a time periodic field in graphene is studied. Within the framework of the Floquet formalism and using the transfer matrix method, the transmission probabilities for the central band and sidebands are calculated. A critical phase difference between the harmonic potentials at the barriers, which cancels transmission through the inelastic sidebands due to quantum interference is found. This phenomenon could be of help to design graphene based filters and high-frequency radiation detectors. Quenching of resonant tunneling by…
Quantum pumping processes are accompanied by considerable quantum noise. We investigated the pumped shot noise (PSN) properties in adiabatically modulated graphene-based double-barrier structures. General expressions for adiabatically PSN in phase-coherent mesoscopic conductors are derived based on the scattering approach. It is found that comparing with the Poisson processes, the PSN is dramatically enhanced where the dc pumped current changes flow direction, which demonstrates the effect of the Klein paradox.
The group delay time of Dirac fermions subjected to a tilting barrier potential along the $ x $-axis is investigated in graphene. We start by finding the eigenspinor solution of the Dirac equation and then relating it to incident, reflected, and transmitted beam waves. This relationship allows us to compute the group delay time in transmission and reflection by obtaining the corresponding phase shifts. We discovered that the barrier width, incident energy, and incident angle can all be used to modify the group delay time, and that the particles travel through the barrier at the Fermi velocity …
We evaluate the electronic transmission and conductance in bilayer graphene through a finite number of potential barriers. Further, we evaluate the dispersion relation in a bilayer graphene superlattice with a periodic potential applied to both layers. As a model we use the tight-binding Hamiltonian in the continuum approxi- mation. For zero bias the dispersion relation shows a finite gap for carriers with zero momentum in the direction parallel to the barriers. This is in contrast to single-layer graphene where no such gap was found. A gap also appears for a finite bias. Numerical results for…
We show that the transmission through single and double δ-function potential barriers of strength P in bilayer graphene is periodic in P with period π. For a certain range of P values we find states that are bound to the potential barrier and that run along the potential barrier. Similar periodic behaviour is found for the conductance. The spectrum of a periodic succession of δ-function barriers (Kronig-Penney model) in bilayer graphene is periodic in P with period 2π. For P smaller than a critical value, the spectrum exhibits two Dirac points while for P larger than this value an energy gap o…
Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier. The two valleys have been treated independently in the literature, where time reversal symmetry dictates that neither the normal incidence transmission nor the angle-averaged one can have any valley polarization. Here we show that, when intervalley scattering by barrier is accounted, graphene electrons normally incident at a superlattice barrier can experienc…
We study resonant tunneling through a superconducting double barrier structure in graphene as a function of the system parameters. At each barrier, due to the proximity effect, an incident electron can either reflect as an electron or a hole (specular as well as retro Andreev reflection in graphene). Similarly, transport across the barriers can occur via electrons as well as via the crossed (specular and/or retro) Andreev channel, where a hole is transmitted nonlocally to the other lead. In this geometry, in the subgap regime, we find resonant suppression of Andreev reflection at certain energ…
We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a square potential barrier. Transmission coefficient is calculated numerically for each case and applied to corresponding tunneling conductance. It is well known that Klein tunneling in graphene will be greatly reduced in a gapped graphene. Our results further demonstrate that such a decrease of transmission can be significantly enhanced for spatially-modulated pot…
We investigate the scattering of a wave packet describing low-energy electrons in graphene by a time-dependent finite step potential barrier. Our results demonstrate that, after Klein tunneling through the barrier, the electron acquires an extra energy which depends on the rate of change the barrier height in time. If such a rate is negative, the electron loses energy and ends up as a valence band state after leaving the barrier, which effectively behaves as a positively charged quasi-particle
We investigate theoretically the transmission of electrons through a pair of δ- function magnetic barriers in graphene in presence of external monochromatic, linearly polarised and CW laser field. The transmission coefficients are calculated in the framework of non-perturbative Floquet theory using the transfer matrix method. It is noted that the usual Fabry-Perot oscillations in transmission through the graphene magnetic barriers with larger inter barrier separation takes the shape of beating oscillations in presence of the external laser field. The laser assisted transmission spectra are als…
Although surface diffusion is critical for many physical and chemical processes, including the epitaxial growth of crystals and heterogeneous catalysis, it is particularly challenging to directly study. Here, we estimate the carbon adatom migration barrier on freestanding monolayer graphene by quantifying its temperature-dependent electron knock-on damage. Due to the fast healing of vacancies by diffusing adatoms, the damage rate decreases with increasing temperature. By analyzing the observed damage rates at 300-1073 K using a model describing our finite scanning probe, we find a barrier of (…
We have investigated theoretically the resonance splitting effect of Dirac electrons through graphene superlattices with periodic potentials of square barriers. It is found that each resonance peak in the transmission gap presents (N-1)-fold resonance splitting for N-barriers, which is the analogy of the case in semiconductor superlattices. The resonance splitting effect depends on the incidence angle rather than the height and width of potential. However, there is no explicit splitting rule for the conductance and shot noise, which is different from the magnetic case. These properties may lea…
The kinetic transport of electrons through graphene magnetic barriers is studied theoretically in presence of an external time harmonic scalar potential. The transmission coefficients are calculated in the framework of the non-perturbative Floquet theory using transfer matrix method. The time dependent scalar potential is found to suppress the usual Fabry-Perot oscillations occurring in the transmission through a constant vector potential barrier (corresponding to two oppositely directed delta-function magnetic barriers). Two types of asymmetric Fano resonances (FR) are noted and are discussed…
We investigate the Goos-Hänchen-like shifts for Dirac fermions in transmission through a monolayer graphene barrier. The lateral shifts, as the functions of the barrier's width and the incidence angle, can be negative and positive in Klein tunneling and classical motion, respectively. Due to their relations to the transmission gap, the lateral shifts can be enhanced by the transmission resonances when the incidence angle is less than the critical angle for total reflection, while their magnitudes become only the order of Fermi wavelength when the incidence angle is larger than the critical ang…
We study the dynamics of carriers in graphene subjected to an inhomogeneous magnetic field. For a magnetic field with an hyperbolic profile the corresponding Dirac equation can be analyzed within the formalism of supersymmetric quantum mechanics, and leads to an exactly solvable model. We study in detail the bound spectra. For a narrow barrier the spectra is characterized by a few bands, except for the zero energy level that remains degenerated. As, the width of the barrier increases we can track the bands evolution into the degenerated Landau levels. In the scattering regime a simple analytic…
We study the spin-resolved transport through magnetic nanostructures in monolayer and bilayer graphene. We take into account both the orbital effect of the inhomogeneous perpendicular magnetic field as well as the in-plane spin splitting due to the Zeeman interaction and to the exchange coupling possibly induced by the proximity of a ferromagnetic insulator. We find that a single barrier exhibits a wavevector-dependent spin filtering effect at energies close to the transmission threshold. This effect is significantly enhanced in a resonant double barrier configuration, where the spin polarizat…
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO$_2$ substrate based graphene devices, and obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behaviour of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due …
We investigate the strain effect on the Goos-Hänchen (GH) shifts and group delay time for transmitted Dirac fermions in gapped graphene through a single barrier potential. The solutions of energy spectrum are used to compute the transmission probabilities together with the GH shifts and group delay time. Our results show that the two last quantities are strongly depending to weather the strain is applied along armchair or zigzag directions. In particular it found that both of quantities can be enhanced with the applied strain.
