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arXiv 1302.1280cond-mat.mes-hallcond-mat.mtrl-sci
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单层MoS2中的大型可调光致thermoelectric effect

Large and tunable photo-thermoelectric effect in single-layer MoS2

Michele Buscema, Maria Barkelid, Val Zwiller, Herre S. J. van der Zant, Gary A. Steele, Andres Castellanos-Gomez

摘要:

利用扫描光电流显微镜研究了单层二硫化钼场效应晶体管的光响应特性。我们发现,与许多其他半导体不同,在单层MoS 2中的光电流产生主要是由光热电效应,而不是由光激发的电子-空穴对在MoS 2/电极界面处的肖特基势垒的分离。我们观察到单层MoS 2的塞贝克系数的大值,通过外部电场,可以在-4x10^2 uV/K和-1x10^5 uV/K之间调节。这种单层MoS 2的大且可调的Seebeck系数为这种材料的新应用铺平了道路,例如片上热发电和废物热能收集。

英文摘要:

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the photo-thermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS2/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS2 that, by an external electric field, can be tuned between -4x10^2 uV/K and -1x10^5 uV/K. This large and tunable Seebeck coefficient of the single-layer MoS2 paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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