We investigate thermoelectric effects in quantum well systems. Using the scattering approach for coherent conductors, we calculate the thermocurrent and thermopower both in the spin-degenerate case and in the presence of giant Zeeman splitting due to magnetic interactions in the quantum well. We find that the thermoelectric current at linear response is maximal when the well level is aligned with the Fermi energy and is robust against thermal variations. Furthermore, our results show a spin voltage generation in response to the applied thermal bias, giving rise to large spin Seebeck effects tunable with external magnetic fields, quantum well tailoring and background temperature.
We have studied the temperature dependent thermopower of gate-defined, lateral quantum dots in the Coulomb blockade regime using an electron heating technique. The line shape of the thermopower oscillations depends strongly on the contributing tunneling processes. Between 1.5 K and 40 mK a crossover from a pure sawtooth- to an intermitted sawtooth-like line shape is observed. The latter is attributed to the increasing dominance of cotunneling processes in the Coulomb blockade regime at low temperatures.
Thermally induced spin-dependent transport across magnetic tunnel junctions is theoretically investigated. We analyze the thermal analog of Slonczewski's model (as well as its limiting case---Julliere's model) of tunneling magnetoresistance and obtain analytical expressions for the junction thermopower and the tunneling magneto-thermopower (TMT). The analytical model is tested numerically for the special case of an Al$_2$O$_3$-based MTJ, for which we analyze the dependence of the thermopower and TMT on the relative magnetization orientations, as well as on the barrier height and thickness. We …
We study the electrical conductance $G$ and the thermopower $S$ of single-molecule junctions, and reveal signatures of different transport mechanisms: off-resonant tunneling, on-resonant coherent (ballistic) motion, and multi-step hopping. These mechanisms are identified by studying the behavior of $G$ and $S$ while varying molecular length and temperature. Based on a simple one-dimensional model for molecular junctions, we derive approximate expressions for the thermopower in these different regimes. Analytical results are compared to numerical simulations, performed using a variant of Büttik…
The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal metal. We develop a theoretical model for describing the dependence of a thermally induced tunneling current across the MTJ on the in-plane orientation of the magnetization in the ferromagnetic layer. The model accounts for the specific Bychkov-Rashba and Dresselhaus spin-orbit interactions present in these systems, which are responsible for the $C_{2v}$ sym…
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the thermocurrent drops by 45%. These observations can be well explained by the Onsager relations taking into account the tunneling magneto resistance of the MTJ. These findings contrast previous studies on Al…
We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in terms of a set of coupled equations for the electron envelope functions. Its connection with other models present in literature is discussed. As an application we consider the case of a Resonant Interband Tunneling Diode, demonstrating the ability of the model to reproduce the expected behaviour of the current as a function of the applied voltage
The coherent tunneling spin current in the bilayer system with spin-orbit coupling is investigated. Based on the continuity-like equations, we discuss the definition of the tunneling current and show that the overlaps between wavefunctions for different layers contribute to the tunneling current. We study the linear response of the tunneling spin current to an in-plane electric field in the presence of nonmagnetic impurities. The tunneling spin conductivity we obtained presents a feature asymmetrical with respect to the gate voltage when the strengthes of impurity potentials are different in e…
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.
Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new…
We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of th…
We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman s…
We study the thermoelectric effect between a conducting lead and a Majorana edge state. In the tunneling limit, we first use the Landuaer-Buttiker formalism to derive the Mott formula relating the thermopower and the differential conductance between a conducting lead and a superconductor. When the tunneling takes place between a conducting lead and a Majorana edge state, we show that a non-vanishing thermopower can exist. Combining measurements of the differential conductance and the voltage difference induced by the temperature difference between the conducting lead and the edge state, the Mo…
Electron transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum mechanical Green's functions formalism. We compare the performance and the results of these methods in the case of magnetic resonant-tunneling diodes. We have implemented the two methods within the self-consistent spin-density-functional theory. Our numerical implementation of the Wigner formalism is based on the finite-difference scheme whereas for the Green's function formalism the finite-element method is used. As a specific application, we consider the dev…
We theoretically investigate the spin--wave spin current induced by the spin Seebeck effect in magnonic spin tunneling junctions (MSTJs) for arbitrary magnetization directions. We show that the MSTJ functions as a \textit{tunable} spin Seebeck diode in which the tunneling spin current can be turned on and off with high efficiency by controlling the magnetization direction.
A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured r…
We study the nonequilibrium transport for the asymmetric and negative differential magnon tunneling driven by temperature bias. We demonstrate that the many-body magnon interaction that makes the magnonic spectrum temperature-dependent is the crucial factor for the emergence of rectification and negative differential spin Seebeck effects in magnon tunneling junctions. When magnonic junctions have temperature-dependent density of states, reversing the temperature bias is able to give asymmetric spin currents and increasing temperature bias could give an anomalously decreasing magnonic spin curr…
We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to the difference in the thickness of the nonmagnetic layers. It is found that the structural asymmetry can…
A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer embedded between two insulating barriers. A simple procedure, based on a detailed analysis of the differential conductance, allows to accurately determine the polarization of the ferromagnet. The spin-filtering character of such a system is furthermore addressed. We show that a 100% spin selectivity can be achieved under appropriate conditions. This approac…
By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the…
We investigate the thermopower due to the orbital Kondo effect in a single quantum dot system by means of the noncrossing approximation. It is elucidated how the asymmetry of tunneling resonance due to the orbital Kondo effect affects the thermopower under gate-voltage and magnetic-field control.
We study I-V characteristics of an all-II-VI semiconductor resonant tunneling diode with dilute magnetic impurities in the quantum well layer. Bound magnetic polaron states form in the vicinity of potential fluctuations at the well interface while tunneling electrons traverse these interface quantum dots. The resulting microscopic magnetic order lifts the degeneracy of the resonant tunneling states. Although there is no macroscopic magnetization, the resulting resonant tunneling current is highly spin polarized at zero magnetic field due to the zero field splitting. Detailed modeling demonstra…
In this paper, we report on the controllable negative differential resistance (NDR) in a proposed planar graphene superlattice structure. High value of peak to valley ratio (PVR) is predicted. This is significant because of appearance of NDR with high PVR at low biases. Our finding is important since beside the other potential applications of the graphene, proposes implementation of the graphene based superlattice in electronic devices such as resonant tunneling diode and filters.
We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz…
Quantum dots are an important model system for thermoelectric phenomena, and may be used to enhance the thermal-to-electric energy conversion efficiency in functional materials. It is therefore important to obtain a detailed understanding of a quantum-dot's thermopower as a function of the Fermi energy. However, so far it has proven difficult to take effects of co-tunnelling into account in the interpretation of experimental data. Here we show that a single-electron tunnelling model, using knowledge of the dot's electrical conductance which in fact includes all-order co-tunneling effects, pred…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.
The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28 dB optical modulation in a 200 um active length device. The advantage of th…
We investigate the transport of holes through $AlAs/In_{.10}Ga_{.90}As$ resonant tunneling diodes which utilize $In_xGa_{1-x}As$ prewells in the emitter with $x=0,.10,$ and $.20$. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localiz- ation) of charges in the prewell and the formation of direct heavy(light) hole to heavy(light) hole conduction channels as a consequence.
The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an asymmetric bias-dependence of the anisotropic tunneling magneto-resistance is also observed: a reverse bias highlights the full (Ga,Mn)As valence band states contribution, whereas a forward bias only pro…
We examine the robustness of single-molecule tunneling diodes to thermal-environmental effects. The diode comprises three fragments: two different conjugated chemical groups at the boundaries, and a saturated moiety in between, breaking conjugation. In this setup, molecular electronic levels localized on the conjugated groups independently shift with applied bias. While in the forward polarity a resonance condition is met, enhancing conductance, in the reversed direction molecular electronic states shift away from each other, resulting in small tunneling currents. In the absence of interaction…
We propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent transport model we show that the current-voltage characteristic of the ferromagnetic diode can be strongly modulated by changing the relative orientation of the magnetizations in the emitter and quantum well, respectively. By a continuous change of the relative magnetization angle the total resistance exhibits a discrete jump realizing digital magneto resista…
A mesoscopic ring subject to the Rashba spin-orbit interaction and sequentially coupled to an interacting quantum dot, in the presence of Aharonov-Bohm flux, is proposed as a flux tunable tunneling diode. The analysis of the conductance by means of the nonequilibrium Green's function technique, shows an intrinsic bistability at varying the Aharonov-Bohm flux when 2U > πΓ, U being the charging energy on the dot and Γthe effective resonance width. The bistability properties are discussed in connection with spin-switch effects and logical storage device applications.
We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.
We report on the realization of a double barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We use a non-resonant beam can be used as an optical gate and control the device transmission. Finally we evidence distortion of the transmission profile when going to the high density regime, signature of polariton-polariton interactions.
We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI when the differential conductance is negative. This behavior, although qualitatively similar to that found in double-barrier diodes, differs from it in important details. In TBRTDs the noise reduction is considerably larger than predicted by a semi-classical model, and the enhancement does not correlate with the strength of the negative differential conduct…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak to valley current ratio of ~1.3. Reverse bias operation presents a characteristic turn-on threshold voltage intimately linked to the polarization fields present in the heterostructure. An analytic elec…
We study the thermopower of a quantum dot weakly coupled to two reservoirs by tunnel junctions. At low temperatures the transport through the dot is suppressed by charging effects (Coulomb blockade). As a result the thermopower shows an oscillatory dependence on the gate voltage. We study this dependence in the limit of low temperatures where the transport through the dot is dominated by the processes of inelastic cotunneling. We also obtain a crossover formula for intermediate temperatures which connects our cotunneling results to the known sawtooth behavior in the sequential tunneling regime…
Ultrafast photon-assisted tunneling is shown to lead to large nonlinear dynamic currents that can be used to generate dc rectified current as well as higher order harmonic response from a metasurface-coupled tunnel diode. This artificial nonlinear media can have tailored resonances in the infrared around the longitudinal optical phonon modes of various compatible restrahlen oxides leading to enhanced electric field confinement in a metal-oxide-semiconductor tunnel diode. This provides a new avenue for the examination and design of nonlinear phenomena extending the concept of nonlinear suscepti…
We have investigated the spin current polarization without the external magnetic field in the resonant tunneling diode with the emitter and quantum well layers made from the ferromagnetic GaMnN. For this purpose we have applied the self-consistent Wigner-Poisson method and studied the spin-polarizing effect of the parallel and antiparallel alignment of the magnetization in the ferromagnetic layers. The results of our calculations show that the antiparallel magnetization is much more advantageous for the spin filter operation and leads to the full spin current polarization at low temperatures a…
We study thermoelectric properties of the system composed of a monoatomic chain on a surface and additional electrode coupled to the chain, which can be an STM tip. In particular, we are interested in thermopower, electric and thermal conductance, Wiedemann-Franz relation and thermoelectric figure of merit, which is a direct measure of the usefulness of the system for applications. We discuss the modifications of the STM wire topography due to temperature gradient between the electrodes. Finally, we also make connection to STM experiment, in which the thermopower has been directly measured, sh…
We study the thermopower and some related transport quantities due to the orbital Kondo effect in a single quantum dot system with a finite value of Coulomb repulsion by means of the noncrossing approximation applied to the multiorbital impurity Anderson model. It is elucidated how the asymmetry of the renormalized tunneling resonance due to the two-orbital Kondo effect causes characteristic behavior of the thermopower at finite temperatures under gate-voltage and magnetic-field control, which is compared with that of the ordinary spin Kondo effect.
We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that, the NDR feature only presents with appropriate structural parameters for the massless case and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which…
The thermopower of a Kondo-correlated gate-defined quantum dot is studied using a current heating technique. In the presence of spin correlations the thermopower shows a clear deviation from the semiclassical Mott relation between thermopower and conductivity. The strong thermopower signal indicates a significant asymmetry in the spectral density of states of the Kondo resonance with respect to the Fermi energies of the reservoirs. The observed behavior can be explained within the framework of an Anderson-impurity model. Keywords: Thermoelectric and thermomagnetic effects, Coulomb blockade, si…
In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN and C phases within a hexagonal lattice. The device operation and performance are investigated by means of a self- consistent model within the non-equilibrium Green's function formalism on a tight-binding Hamiltonian. This RTD exhibits a negative differential conductance effect which involves the resonant tunneling through both the electron and hole bound st…
We demonstrate Resonant Tunneling Diodes, embedded in double metal cavities, strongly coupled to the cavity field, while maintaining their electronic properties. We measure the polariton dispersion and find a relative vacuum Rabi splitting of 16%, which explicitly qualifies for the strong-coupling regime. Additionally we show that electronic transport has a significant influence on the polaritons by modulating the coupling strength. The merge between electronic transport and polaritonic physics in our devices opens up a new aspect of cavity quantum electro-dynamics and integrated photonics.
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga,Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with +-6.5% remanence is observed in …
The fully self-consistent non-equilibrium Green functions (NEGFs) approach to the quantum transport is developed for the investigation of one-dimensional nano-scale devices. Numerical calculations performed for resonant tunneling diodes (RTDs) of different designs and at different temperatures show reasonable results for the potential and electron density profiles, as well as for the transmission coeffcient and the current-voltage characteristics. The resonant behavior is discussed in detail with respect to the quantum-well width, the barrier thickness, and the temperature. It is also shown th…
The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare PtS2 pyramids Si p-n junctions for an investigation of the tunneling and breakdown diodes. the demonstrated p-n diode exhibited a high rectifying performance reaching a rectification ration (If/Ir) to 7.2 *10^4 at zero gate bias with an ideality factor of 1.5. The zener tunneling was observed at a low reverse bias region of breakdown voltage (from -6 to -1V) at…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias …
We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the charges of propagating electrons and holes. Using the developed model, we calculate the dc current-voltage characteristics and the small-signal ac fre…
We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.
Low-dimensional systems with sharp features in the density of states have been proposed as a means to improving the efficiency of thermoelectric devices. Quantum dot systems, which offer the sharpest density of states achievable, however, suffer from low power outputs while bulk (3-D) thermoelectrics, while displaying high power outputs, offer very low efficiencies. Here, we analyze the use of a resonant tunneling diode structure that combines the best of both aspects, that is, density of states distortion with a finite bandwidth due to confinement that aids the efficiency and a large number o…
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electr…
A spin- and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated current-voltage characteristics in an external magnetic field we have demonstrated that under a constant bias both the spin-up and spin-down current components exhibit the THz oscillations in two different bias voltage regimes. We have shown that the oscillations of the spin-up (down) polarized current result from the coupling between the two resonance states: one localized in the triangular quantum well created in th…
We present a theoretical description of the thermopower due to magnon-assisted tunneling in a mesoscopic tunnel junction between two ferromagnetic metals. The thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. For a junction between two ferromagnets with antiparallel polarizations, the ability of magnon-assisted tunneling to create thermopower $S_{AP}$ depends on the difference between the size $Π_{\uparrow, \downarrow}$ of the majority and minority band Fermi surfaces and it is proportional to a temperature dependent factor $(k…
Relations for the optimum well width, barrier width and width of the spacer layer to achieve highest PVCR on the basis of effective mass and barrier height in RTDs is proposed. The optimum spacer layer is found to be half of the de-Broglie wavelength associated with the bound state of the corresponding finite quantum well. The proposed relations for the optimum parameters can be used to design RTD based on any two appropriate materials to attain highest PVCR. The effect of doping concentrations on PVCR and peak current was studied. As case study, we have considered the GaAs/Ga0.7Al0.3As and Ga…
We use a many-body rate-equation approach to calculate the thermopower of a quantum dot in the presence of an exchange interaction. At temperatures much smaller than the single-particle level spacing, the known quantum jumps (discontinuities) in the thermopower are split by the exchange interaction. The origin and nature of the splitting are elucidated with a simple physical argument based on the nature of the intermediate excited state in the sequential tunneling approach. We show that this splitting is sensitive to the number parity of electrons in the dot and the dot's ground-state spin. Th…
