Simulation of Optimum values of device parameters to attain Peak to Valley current Ratio (PVCR) in Resonant tunneling diodes (RTD)
英文摘要：
Relations for the optimum well width, barrier width and width of the spacer layer to achieve highest PVCR on the basis of effective mass and barrier height in RTDs is proposed. The optimum spacer layer is found to be half of the de-Broglie wavelength associated with the bound state of the corresponding finite quantum well. The proposed relations for the optimum parameters can be used to design RTD based on any two appropriate materials to attain highest PVCR. The effect of doping concentrations on PVCR and peak current was studied. As case study, we have considered the GaAs/Ga0.7Al0.3As and GaN/Ga0.7Al0.3N RTDs. The current density obtained using the tunneling coefficient based on transfer matrix approach takes in to account the variation in the electric field in the well and barrier region on account of variation in the dielectric constant in the material.
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