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arXiv 1302.0733cond-mat.mtrl-scicond-mat.str-el
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密度泛函理论对过渡金属氧化物和硫属化合物带隙的有效估算

Efficient Estimation of Band Gaps in Transition-Metal Oxides and Chalcogenides using Density Functional Theory

Wenqing Li, Christian F. J. Walther, Agnieszka Kuc, Thomas Heine

摘要:

从带隙、能带结构和投影态密度三个方面研究了两种现代密度泛函HSE 06和TB-mBJ在预测金属氧化物、硫属化物和氮化物电子结构方面的性能。与GGA相反,混合泛函和GGA+U,这两个新的泛函都能够预测带隙,具有25%的可观的准确度,从而允许以适度的计算成本筛选各种类别的(混合)金属氧化物。计算的电子结构在很大程度上不受基函数和软件实现的选择。

英文摘要:

The performance of two modern density-functionals, HSE06 and TB-mBJ, on predicting electronic structures of metal oxides, chalcogenides and nitrides, is studied in terms of band gaps, band structure and projected density-of-states. Contrary to GGA, hybrid functionals and GGA+U, both new functionals are able to predict band gaps with an appreciable accuracy of 25% and thus allow the screening of various classes of (mixed) metal oxides at modest computational cost. The calculated electronic structures are largely unaffected by the choice of basis functions and software implementation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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