具有高介电常数的材料对于电子器件的小型化有很大的需求。更具体地，高介电常数聚合物-陶瓷复合材料可用于嵌入式电容器应用。采用熔融共混热压法制备了CaCu 3 Ti4 O 12（CCTO）/PMMA复合材料。由此制造的复合材料已被表征的结构，形态和介电性能。复合材料的介电常数随着CCTO在PMMA基体中含量的增加而增加。PMMA的介电常数约为4.9@100 Hz，当陶瓷含量增加到40 μ g/g时，其增加到15.7@100 Hz。在低频下，空间电荷极化占主导地位。该复合材料在高频下也表现出显著的低介电损耗，这使得该复合材料成为高频应用中电容器的合适候选者。
英文摘要：
Materials with high dielectric constant are in great demand for the miniaturization of electronic devices. More specifically, high dielectric constant polymer-ceramic composites are useful for embedded capacitor applications. A composite consisting of giant dielectric CaCu3Ti4O12 (CCTO) incorporated into the Poly(methyl methacrylate) (PMMA) polymer matrix has been fabricated by melt mixing followed by hot pressing. The composites thus fabricated has been characterised for structural, morphological and dielectric properties. The composites dielectric constants had increased when the CCTO content increased in the PMMA matrix. The dielectric constant of PMMA is around 4.9 @ 100Hz which has increased to 15.7 @ 100Hz when the ceramic content has increased to 40 Vol %. At low frequencies, space charge polarisation is dominant. This composite also exhibited remarkably low dielectric loss at high frequency, which makes this composite a suitable candidate for the capacitors in high frequency application.
Poly(methyl methacrylate) - Palladium clusters nanocomposite formation by supersonic cluster beam deposition: a method for microstructured metallization of polymer surfaces
High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
我们在二氧化硅和聚甲基丙烯酸甲酯（PMMA）衬底上制作了二硫化钼场效应晶体管，并在四探针配置中测量了载流子迁移率。对于SiO2上的多层MoS 2，迁移率为30-60 cm 2/Vs，与厚度（15-90 nm）相对无关，并且大多数器件表现出单极n型行为。相比之下，PMMA上的多层MoS 2显示出随厚度增加的迁移率，在厚度约50 nm处高达470 cm 2/Vs（电子）和480 cm 2/Vs（空穴）。迁移率对厚度的依赖性指向在增加迁移率中的块状MoS 2的长程介电效应。
Method for Transferring High-Mobility CVD-Grown Graphene with Perfluoropolymers
使用无定形聚合物通过化学气相沉积（CVD）生长的石墨烯的转移代表了用于石墨烯基电子器件制造的广泛实施的方法。然而，最常用的聚合物聚甲基丙烯酸甲酯（PMMA）会在石墨烯上留下残留物，从而限制了移动性。在这里，我们报告了一种石墨烯转移和图案化的方法，该方法采用全氟聚合物-Hyronium-作为转移手柄，并保护石墨烯免受光刻胶或其他聚合物的污染。以这种方式转移到LaAlO $_3$ /SrTiO $_3$异质结构上的CVD生长的石墨烯在原子上是干净的，在2 K下在狄拉克点附近具有高迁移率（~ 30，000 cm $^2$ V $^{-1}$ s $^{-1}$）和清晰的量化霍尔和磁阻。局部控制的LaAlO $_3$ /SrTiO $_3$界面金属-绝缘体过渡-通过石墨烯-保留与此转移方法。全氟聚合物（诸如Hyplane）与CVD生长的石墨烯和其他2D材料的使用可以容易地与其他聚合物或光致抗蚀剂一起实施。
