We have designed a system to study microwave assisted domain wall nucleation in permalloy nanowires. We find a substantial decrease in the nucleation field when microwave fields are applied, in comparison to pulse fields. A clear resonance peak is observed in the frequency dependence of the nucleation field, which coincides with the uniform mode ferromagnetic resonance frequency. Owing to the well-defined nucleation process, the switching field distribution is small in contrast to previous reports. Our results show that localized microwave field provides an efficient tool for injecting domain walls into magnetic nanowires.
We study domain wall (DW) dynamics in permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that DW oscillations at a pinning site in the nanowire can be excited with velocities as high as 800 m/s at current densities below 10$^7$ A/cm$^2$.
The domain wall nucleation and motion processes in Permalloy nanowires with a thickness gradient along the nanowire axis have been studied. Nanowires with widths, w = 250 nm to 3 um and a base thickness of t = 10 nm were fabricated by electron-beam lithography. The magnetization hysteresis loops measured on individual nanowires are compared to corresponding nanowires without a thickness gradient. The Hc vs. t/w curves of wires with and without a thickness gradient are discussed and compared to micromagnetic simulations. We find a metastability regime at values of w, where a transformation from…
We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but by careful choice of ann…
The magnetostatic interaction between two oppositely charged transverse domain walls (DWs)in adjacent Permalloy nanowires is experimentally demonstrated. The dependence of the pinning strength on wire separation is investigated for distances between 13 and 125 nm, and depinning fields up to 93 Oe are measured. The results can be described fully by considering the interaction between the full complex distribution of magnetic charge within rigid, isolated DWs. This suggests the DW internal structure is not appreciably disturbed by the pinning potential, and that they remain rigid although the pi…
Using Lorentz transmission electron microscopy we investigate the behavior of domain walls pinned at non-topographic defects in Cr(3 nm)/Permalloy(10 nm)/Cr(5 nm) nanowires of width 500 nm. The pinning sites consist of linear defects where magnetic properties are modified by a Ga ion probe with diameter ~ 10 nm using a focused ion beam microscope. We study the detailed change of the modified region (which is on the scale of the focused ion spot) using electron energy loss spectroscopy and differential phase contrast imaging on an aberration (Cs) corrected scanning transmission electron microsc…
In the developing field of magnonics,it is very important to achieve tailoring of spin wave propagation by both a proper combination of materials with different magnetic properties and their nanostructuring on the submicrometric scale. We have exploited deep ultra-violet lithography, in combination with tilted shadow deposition technique, to fabricate arrays of closely spaced bi-layer nanowires (NWs), with separation d=100 nm and periodicity a=440 nm, having bottom and top layers made of Permalloy and Iron, respectively. The NWs have either rectangular cross section (bottom and upper layers of…
We study thermally assisted domain wall generation in perpendicular magnetic anisotropy CoFeB trilayer nanowires by the effect of Joule heating. The anomalous Hall effect is utilized to detect magnetization reversal in order to study the domain wall generation. We observe a statistical distribution in the switching process which is consistent with the thermal activation process. Our results show that the proposed method provides an efficient way for generating domain walls in perpendicular magnetic nanowires at predefined locations.
We study field-induced domain wall motion in permalloy nanowires with vertically etched nanotrench pinning site. Micromagnetic simulations and electrical measurements are employed to characterize the pinning potential at the nanotrench. It is found that the potential profile for a transverse wall significantly differs from that of a vortex wall, and there is a correlation between the pinning strength and the potential profile. Reliable domain wall pinning and depinning is experimentally observed from a nanotrench in permalloy nanowires. This demonstrates the suitability of the proposed nanotre…
We investigate theoretically the effects of elastic and plastic deformations on heterogeneous nucleation and nanowire formation. In the first case, the influence of the confinement of the critical nucleus between two parallel misfitting substrates is investigated using scaling arguments. We present phase diagrams giving the nature of the nucleation regime as a function of the driving force and the degree of confinement. We complement this analytical study by amplitude equations simulations. In the second case, the influence of a screw dislocation inside a nanowire on the development of the mor…
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensembl…
We use spin torque ferromagnetic resonance to measure the spectral properties of dipole-exchange spin waves in permalloy nanowires. Our measurements reveal that geometric confinement has a profound effect on the damping of spin waves in the nanowire geometry. The damping parameter of the lowest-energy quantized spin wave mode depends on applied magnetic field in a resonant way and exhibits a maximum at a field that increases with decreasing nanowire width. This enhancement of damping originates from a nonlinear resonant three-magnon confluence process allowed at a particular bias field value d…
Molecular dynamics simulations have been performed to understand the influence of temperature on the tensile deformation and fracture behavior of $<$111$>$ BCC Fe nanowires. The simulations have been carried out at different temperatures in the range 10-1000 K employing a constant strain rate of $1\times$ $10^8$ $s^{-1}$. The results indicate that at low temperatures (10-375 K), the nanowires yield through the nucleation of a sharp crack and fails in brittle manner. On the other hand, nucleation of multiple 1/2$<$111$>$ dislocations at yielding followed by significant plastic deformation leadi…
We report several procedures for the robust nucleation of magnetic domain walls in cylindrical permalloy nanowires. Specific features of the magnetic force microscopy contrast of such soft wires are discussed, with a view to avoid the misinterpretation of the magnetization states. The domain walls could be moved under quasistatic magnetic fields in the range 0.1--10 mT.
Due to the large free surface and strong anisotropy, the mechanical property of nanowire differs from its bulk counterpart. In this paper, the strong dependence of NW's strength on its surface orientation is revealed, and two modes of dislocation nucleation have been identified: the corner nucleation and the surface nucleation. The activation energy and activation volume of surface nucleation are much larger than those of the corner nucleation. The intersection line between lateral surface and {111}-type slip plane causes the discrepancy of the nucleation modes for the first dislocation.
We studied the temperature dependence of the magnetization reversal in individual submicron permalloy disks with micro-Hall and bend-resistance magnetometry. The nucleation field exhibits a nonmonotonic dependence with positive and negative slopes at low and high temperatures, respectively, while the annihilation field monotonically decreases with increasing temperature, but with distinctly different slopes at low and high temperatures. Our analysis suggests that at low temperatures vortex nucleation and annihilation proceeds via thermal activation over an energy barrier, while at high tempera…
We investigate the current-driven magnetization dynamics in narrow Permalloy wires by means of Lorentz microscopy and electron holography. Current pulses are found to transform the magnetic structure in the uniformly magnetized state below the Curie temperature. A variety of magnetic states including reversed magnetic domains are randomly obtained in low probability. The dynamics of vortices found in most of observed magnetic states seems to play a key role in triggering the magnetization reversal.
We report the results of micromagnetic simulations of domain wall (DW) nucleation and pinning/depinning processes in ferromagnetic planar structure consisting of nanowire (NW) with perpendicular anisotropy and special V-shaped nanoparticle (NP) with in-plane anisotropy located on top of NW. The magnetization reversal features of this system in an external magnetic field are investigated depending on the direction of particle magnetic moment. Possible variants of magnetic logic cells (LCs) based on such system are discussed.
The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistical properties of nanostructure ensembles such as size homogeneity. Using in situ reflection high-energy electron diffraction, we accurately deduce the incubation times for Ga-assisted GaAs nanowires grown on unpatterned Si(111) substrates by molecular beam epitaxy under different conditions. We develop a nucleation model that explains and fits very well the data. We find that, for a given temperature and Ga flux, the…
We develop a nucleation-based model to explain the formation of the wurtzite (WZ) crystalline phase during the vapor-liquid-solid growth of free-standing nanowires of zinc-blende (ZB) semiconductors. We first show that, in nanowires, nucleation generally occurs at the outer edge of the solid/liquid interface (the triple phase line) rather than elsewhere at the solid/liquid interface. In the present case, this entails major differences between ZB and WZ nuclei. Depending on the pertinent interface energies, WZ nucleation is favored at high liquid supersaturation. This explains our systematic ob…
We propose a mechanism for nucleation and high-density packing of 360° domain walls (DWs) on planar ferromagnetic nanowires, of 100 nm width, by using circular magnetic fields. The extent of the stray field from a 360° DW is limited in comparison to 180° DWs, which allows them to be packed more densely than 180° DWs in a potential data storage device. We use micromagnetic simulations to demonstrate high-density packing of 360° DWs, using a series of rectangular 16 x 16 nm2 notches to act as local pinning sites on the nanowires. For these notches, the minimum spacing between the DWs is 240 nm, …
Controlling the growth of zinc oxide nanowires is necessary to optimize the performances of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. In this view, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion do…
The synthesis of silver nanowires in solution phase is of great interest because of their applicability for fabrication of plasmonic devices. Silver nanowires with diameters of 6.5 nm and length exceeding microns are synthesized in aqueous solution by reduction of silver ions within the nanotubular J-aggregates of an amphiphilic cyanine dye. The time scale of the growth of the nanowires is of the order of hours and days which provides the unique possibility to investigate the nucleation, growth, and dissolution of the nanowires by direct imaging using transmission electron microscopy. It is fo…
Cylindrical nanowires made of soft magnetic materials, in contrast to thin strips, may host domain walls of two distinct topologies. Unexpectedly, we evidence experimentally the dynamic transformation of topology upon wall motion above a field threshold. Micromagnetic simulations highlight the underlying precessional dynamics for one way of the transformation, involving the nucleation of a Bloch-point singularity, however, fail to reproduce the reverse process. This rare discrepancy between micromagnetic simulations and experiments raises fascinating questions in material and computer science.
The potential experienced by transverse domain walls (TDWs) in the vicinity of asymmetric constrictions or protrusions in thin Permalloy nanowires is probed using spatially resolved magneto-optical Kerr effect measurements. Both types of traps are found to act as pinning centers for DWs. The strength of pinning is found to depend on the trap type as well as on the chirality of the incoming DW; both types of traps are seen to act either as potential wells or potential barriers, also depending on the chirality of the DW. Micromagnetic simulations have been performed that are in good qualitative …
We study the magnetic properties of cylindrical ferromagnetic core - antiferromagnetic shell nanowires using Monte Carlo simulations and a classical Heisenberg Hamiltonian in order to elucidate the impact of the oxidized shell on the magnetic properties and the magnetization reversal mechanism. We find that the coupling to the antiferromagnetic shell leads to suppression of the coercivity and emergence of a weak exchange bias effect. Comparison of the magnetization reversal mechanism in the bare and the surface-oxidized nanowire reveals that the domain wall propagation and annihilation remains…
We present a surface stacking fault (SSF) energy approach to predicting defect nucleation from the surfaces of surface-dominated nanostructure such as FCC metal nanowires. The approach leads to a criteria that predicts the initial yield mechanism via either slip or twinning depending on whether the unstable twinning energy or unstable slip energy is smaller as determined from the resulting SSF energy curve. The approach is validated through a comparison between the SSF energy calculation and low-temperature classical molecular dynamics simulations of copper nanowires with different axial and t…
We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from coalescence, which is in contrast to the growth on Si and other substrates. Only beyond a certain nanowire length that depends on the nanowire number density and exceeds here 1.5 μm, coalescence takes place by bundling, i.e. the same process as on Si. By analyzing the nearest neighbor distance distribution, we identify diffusion-induced repulsion …
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with…
We investigate diffusive transport through a number of domain wall (DW) profiles of the important magnetic alloy Permalloy taking into account simultaneously noncollinearity, alloy disorder, and spin-orbit coupling fully quantum mechanically, from first principles. In addition to observing the known effects of magnetization mistracking and anisotropic magnetoresistance, we discover a not-previously identified contribution to the resistance of a DW that comes from spin-orbit-coupling-mediated spin-flip scattering in a textured diffusive ferromagnet. This adiabatic DW resistance, which should ex…
The microwave assisted magnetisation reversal is modelled in a permalloy micron-sized magnetic ellipsoid. Our simulations confirm that this process requires less field than magnetisation reversal under a static field. This is due to a different reversal mode which in case of the microwave-assisted process is always a ripple structure. During the magnetisation reversal two stages: nucleation and relaxation are distinguished. The nucleation process is governed by spinwave instabilities. The relaxation process is related to the domain expansion through domain wall propagation determined by the pr…
A systematic micromagnetic study of the morphological characteristic effects over the magnetic static properties of Co-based complex shaped nanowires is presented. The relevance of each characteristic size (i.e. length L, diameter d, and size of the nanowires head T) and their critical values are discussed in the coercive field optimization goal. Our results strongly confirms that once the aspect ratio (L/d) of the nanowire is bigger than around 10, the length is no more the pertinent parameter and instead the internal diameter and the shape of the nanowires play a key role. We attribute this …
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared either in a single-domain state or a two-domain state. The presence or absence of the domain wall acts to shift the switching fields of the nanowire. In addition, a comparison of the magnetoresistance of the nanowire with and without a domain wall shows a shift in the resistance correlated with the presence of a wall. The resistance is decreased by 20-30 milli-…
The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports exist in cylindrical geometry, where Bloch point domain walls are expected to have intriguing properties. Here we report this investigation in cylindrical magnetic Ni nanowires with geometrical notches. Experimental work based on synchrotron X-ray magnetic circular dichroism (XMCD) combined with photoemission electron microscopy (PEEM) indicates that large cu…
We study the role of gold droplets in the initial stage of nanowire growth via the vapor liquid solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes the nanowire emergence, that is, they assist the nucleation of nanocraters with strongly faceted 111B side walls. Only once these facets become sufficiently large and regular, the gold droplets start nucleating and guiding the growth of nanowires. We show that this dual role of the gold droplets can be detected and monitored by high energy electron…
Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Neel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ~75% of the Co/Pd wires after ac-demagnetization but was …
We study the key domain wall properties in segmented nanowires loop-based structures used in domain wall based sensors. The two reasons for device failure, namely the distribution of domain wall propagation field (depinning) and the nucleation field are determined with Magneto-Optical Kerr Effect (MOKE) and Giant Magnetoresistance (GMR) measurements for thousands of elements to obtain significant statistics. Single layers of Ni$_{81}$Fe$_{19}$, a complete GMR stack with Co$_{90}$Fe$_{10}$/Ni$_{81}$Fe$_{19}$ as a free layer and a single layer of Co$_{90}$Fe$_{10}$ are deposited and industrially…
Microscopic pathways of structural phase transitions are difficult to probe because they occur over multiple, disparate time and length scales. Using $in$ $situ$ nanoscale cathodoluminescence microscopy, we visualize the thermally-driven transition to the perovskite phase in hundreds of non-perovskite phase nanowires, resolving the initial nanoscale nucleation and subsequent mesoscale growth and quantifying the activation energy for phase propagation. In combination with molecular dynamics computer simulations, we reveal that the transformation does not follow a simple martensitic mechanism, a…
Controlling domain wall motion is important due to the impact on the viability of proposed nanowire devices. One hurdle is slow domain wall speed when driven by fields greater than the Walker field, due to nucleation of vortices in the wall. We present simulation results detailing the dynamics of these vortices; including the nucleation and subsequent fast ejection of the vortex core leading to fast domain wall speeds. The ejection is due to the reversal of the core moments by an out-of-plane field. The technique can be used to produce domain walls of known orientation independent of the initi…
Taking into account the coupling between the position of the wall and an internal degree of freedom, namely its phase $ϕ$, we examine, in the rigid wall approximation, the dynamics of a magnetic domain wall subject to a weak pinning potential. We determine the corresponding force-velocity characteristics, which display several unusual features when compared to standard depinning laws. At zero temperature, there exists a bistable regime for low forces, with a logarithmic behavior close to the transition. For weak pinning, there occurs a succession of bistable transitions corresponding to differ…
The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed …
The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed …
