相邻坡莫合金纳米线中畴壁间的近场相互作用
Near-field interaction between domain walls in adjacent Permalloy nanowires
摘要：
实验证明了相邻坡莫合金纳米线中两个带相反电荷的横畴壁之间的静磁相互作用。钉扎强度对导线间距的依赖关系进行了研究，为13和125 nm之间的距离，和脱钉场高达93 Oe的测量。结果可以充分描述，通过考虑之间的相互作用的完整的复杂分布的磁荷刚性，孤立的DW。这表明DW的内部结构没有受到钉扎电位的明显干扰，尽管钉扎强度很大，但它们仍然保持刚性。这项工作证明了无DW扰动的非接触DW捕获的可能性和钉扎电位类型和强度的完全连续的灵活性。基于DW的数据存储方案的相互作用的后果进行评估。
英文摘要：
The magnetostatic interaction between two oppositely charged transverse domain walls (DWs)in adjacent Permalloy nanowires is experimentally demonstrated. The dependence of the pinning strength on wire separation is investigated for distances between 13 and 125 nm, and depinning fields up to 93 Oe are measured. The results can be described fully by considering the interaction between the full complex distribution of magnetic charge within rigid, isolated DWs. This suggests the DW internal structure is not appreciably disturbed by the pinning potential, and that they remain rigid although the pinning strength is significant. This work demonstrates the possibility of non-contact DW trapping without DW perturbation and full continuous flexibility of the pinning potential type and strength. The consequence of the interaction on DW based data storage schemes is evaluated.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
