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arXiv 1209.5280cond-mat.mes-hallcond-mat.mtrl-sci
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栅电场作用下石墨烯纳米带的电子性质

Electronic properties of graphene nanoribbons under gate electric fields

Tobias Burnus, Gustav Bihlmayer, Daniel Wortmann, Yuriy Mokrousov, Stefan Blügel, Klaus Michael Indlekofer

摘要:

采用密度泛函理论,考虑栅电极电场的影响,计算了石墨烯纳米带(GNR)中的量子点态.场平行于GNR平面,并且由放置在带顶上的不均匀电荷片产生。改变电场可以观察到GNR态的发展和带隙中局部量子点状态的形成。计算已进行扶手椅GNR和扶手椅带锯齿形截面。对于扶手椅GNR,静态介电常数ε约为。四是可以确定。

英文摘要:

Quantum-dot states in graphene nanoribbons (GNR) were calculated using density-functional theory, considering the effect of the electric field of gate electrodes. The field is parallel to the GNR plane and was generated by an inhomogeneous charge sheet placed atop the ribbon. Varying the electric field allowed to observe the development of the GNR states and the formation of localized, quantum-dot-like states in the band gap. The calculation has been performed for armchair GNRs and for armchair ribbons with a zigzag section. For the armchair GNR a static dielectric constant of ε approx. 4 could be determined.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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