We describe the results of a theoretical study of transport through gated metallic graphene nanoribbons using a non-equilibrium Green function method. Although analogies with quantum field theory predict perfect transmission of chiral fermions through gated regions in one dimension, we find \emph{perfect reflection} of chiral fermions in armchair ribbons for specific configurations of the gate. This effect should be measurable in narrow graphene constrictions gated by a charged carbon nanotube.
We study locally gated silicene nanoribbons as spin active devices. We find that the gated segments of nanoribbons with zigzag edge can be used to perform a spin inversion for the electron spins injected with an in-plane orientation. The strong intrinsic spin-orbit coupling for low Fermi energy in presence of an external vertical electric field provides a fast spin precession around the axis perpendicular to the silicene plane. The spin inversion length can be as small as 10 nm. On the other hand in the armchair nanoribbons the spin inversion occurs via the Rashba effect which is weak and the …
Zigzag nanoribbons of monolayer graphene-like two-dimensional materials host spontaneous edge magnetism at the zigzag terminations, whose configuration controls the band gap. In this article, the edge magnetism of zigzag nanoribbons of bilayer hexagonal crystals are studied. The specific models of bilayer graphene and bilayer silicene are both studied. As the gated voltage increases, the total energy level, magnetic structure and band structures of the ground state and the first quasi-stable excited state are tuned. For certain region of the gated voltage, the band gaps of spin up and down are…
Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be increased by almost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage range. In this case, the additional noise contribution from the contact regions is minimized, and an accuracy of 0.5% of a pH shift in one Hz bandwidth can be reached.
By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.
We investigate the effects of a perpendicular electric field applied to multilayer phosphorene nanoribbons with zigzag and armchair edges. Within the context of the tight-binding model, we explore the electronic properties of these systems giving emphasis to the appearance of Dirac-like spectra, a transition that occurs when the gate density associated with the applied displacement field is greater than the critical value $n_c$. We show that the confinement properties and the screening effects in such systems play an important role on the determination of $n_c$, suggesting a scheme to determin…
The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated self-consistently within the Hartree approximation. A comparison to their single-particle counterparts reveals the effects of interactions and screening. Due to the finite width of the nanoribbon in combination with electronic repulsion, the gate-induced electrons tend to accumulate along the BGN edges where the potential assumes a sharp triangular shape. This has…
Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results show that, for antiparallel configuration, a band gap is opened giving rise a semiconducting behavior, while for parallel configuration, the band structure has no band gap. As a result, a giant magne…
Spin-dependent electronic transport properties of Fe-terminated zig-zag graphene nanoribbons (zGNR) have been studied using first-principles transport simulations. The spin configuration of proposed zGNR junction can be controlled with external magnetic field, and the tunneling junction show MR>1000 at small bias and is a perfect spin-filter by applying uniform external magnetic filed at small bias.
We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure, and finally becomes completely suppressed at larger strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudo-magnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which either …
Numerical calculations based on the recursive Green's functions method in the tight-binding approximation are performed to calculate the dimensionless conductance $g$ in disordered graphene nanoribbons with Gaussian scatterers. The influence of the transition from short- to long-ranged disorder on $g$ is studied as well as its effects on the formation of a perfectly conducting channel. We also investigate the dependence of electronic energy on the perfectly conducting channel. We propose and calculate a backscattering estimative in order to establish the connection between the perfectly conduc…
Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurement…
The low-energy spectrum of graphene nanoribbons with armchair edges (armchair nanoribbons) is described as the superposition of two non-equivalent Dirac points of graphene. In spite of the lack of well-separated two valley structures, the single-channel transport subjected to long-ranged impurities is nearly perfectly conducting, where the backward scattering matrix elements in the lowest order vanish as a manifestation of internal phase structures of the wavefunction. For multi-channel energy regime, however, the conventional exponential decay of the averaged conductance occurs. Since the int…
The recent fabrication of graphene nanoribbon (GNR) field-effect transistors poses a challenge for first-principles modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport algorithms, based on the nonequilibrium Green function formalism combined with the density functional theory (NEGF-DFT), were originally developed to calculate self-consistent electron density in equilibrium and at finite bias voltage (as a prerequisite to obtain conductance or current-voltage characteristics, respectively) for small molecules attached to me…
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.
We will present brief overview on the electronic and transport properties of graphene nanoribbons focusing on the effect of edge shapes and impurity scattering. The low-energy electronic states of graphene have two non-equivalent massless Dirac spectrum. The relative distance between these two Dirac points in the momentum space and edge states due to the existence of the zigzag type graphene edges are decisive to the electronic and transport properties of graphene nanoribbons. In graphene nanoribbons with zigzag edges, two valleys related to each Dirac spectrum are well separated in momentum s…
Electron transport in a disordered graphene nanoribbon with zigzag edges is crucially affected by a perfectly conducting channel (PCC), which is stabilized if intervalley scattering is ignorable. In the presence of such a PCC, the dimensionless conductance g of the system decreases to the quantized value of g = 1 with increasing system length L. In the realistic case where intervalley scattering is weak but not ignorable, the PCC is gradually destabilized with increasing L, and g eventually decays to zero owing to the onset of Anderson localization. Here, we show that such destabilization of t…
Using the tight-binding approach we study the electronic transport in a $\mathrm{MoS}_2$ zigzag ribbon with a spatially varying potential profile. Considering a ribbon with a smooth potential step in the Fermi energy regime where the transport is dominated by the edge modes, we find that the conductance exhibits sharp resonances due to the resonant transport through a n-p-n junction effectively created in the structure. We show that in a gated wire the current carried on the wire edges can be blocked despite the metallic band structure of the ribbon. For the Fermi energies corresponding to $\m…
Graphene nanoribbons with perfect edges are predicted to exhibit interesting electronic and spintronic properties, notably quantum-confined bandgaps and magnetic edge states. However, graphene nanoribbons produced by lithography have, to date, exhibited rough edges and low-temperature transport characteristics dominated by defects, mainly variable range hopping between localized states in a transport gap near the Dirac point. Here, we report that one- and two-layer nanoribbons quantum dots made by unzipping carbon nanotubes10 exhibit well-defined quantum transport phenomena, including Coulomb …
By using non-equilibrium Green's function (NEGF) method and tight-binding (TB) approximation, we investigated a perfect control on spin transport in a zigzag $α^{\prime}$-boron nanoribbon ($α^{\prime}$-BNR) as the must semi-conducting structure of borophene. It has been found that when an $α^{\prime}$-BNR is exposed to an out-of-plane exchange magnetic field, spin splitting occurs for both spin-up and spin-down states in specific ranges of energy. Therefore, the spin polarization of current could be controlled by adjusting the energy of incoming electrons by means of an external back-gate volt…
We consider gated graphene nanoribbons subject to Berry-Mondragon boundary conditions in the presence of weak impurities. Using field--theoretical methods, we calculate the density of charge carriers (and, thus, the quantum capacitance) as well as the optical and DC conductivities at zero temperature. We discuss in detail their dependence on the gate (chemical) potential, and reveal a non-linear behaviour induced by the quantization of the transversal momentum.
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percol…
Using density functional theory and non-equilibrium Greens function technique, we performed theoretical investigations on the structural and transport properties of zigzag silicene nanoribbons with Stone-Wales defect. The calculated formation energy is significantly lower than that of graphene and silicene, which implies the high stability of such defect in SiNRs. Negative differential resistance can be observed within certain bias voltage range in both perfect and SW defected SiNRs. In order to elucidate the mechanism the NDR behavior,the transmission spectra and molecular projected self-cons…
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces ON-state currents and increases OFF-state currents, and introduces wide variability across devices. These effects decrease as ribbon widths increase and as edges become smoother. However the bandgap decreases with increasing width, thereby increasing the band-to-band tunneling mediated subthreshold leakage current even with perfect nanoribbons. These results …
Non-equilibrium spin-polarized transport properties of antiferromagnetic stanene nanoribbons are theoretically studied under the combining effect of a normal electric field and linearly polarized irradiation based on the tight-binding model at room temperature. Due to the existence of spin-orbit coupling in stanene lattice, applying normal electric field leads to splitting of band degeneracy of spin-resolved energy levels in conduction and valence bands. Furthermore, unequivalent absorption of the polarized photons at two valleys which is attributed to an antiferromagnetic exchange field resul…
We study in this paper the edge polarizations and their consequences for a biased Bernal stacked bilayer graphene nanoribbon with zigzag termination. The magnetic states are classified according to the interlayer and intralayer couplings between the edge polarizations, and the magnetic phase diagram of doping versus bias voltage is given. Coplanar magnetic phase is found and the variation of its magnetic structure with the bias voltage is investigated. For all the magnetic states, we also discuss the possibility of the half-metallicity, and for a ribbon with perfect zigzag edges we predict sev…
The buckling of graphene nano-ribbons containing a grain boundary is studied using atomistic simulations where free and supported boundary conditions are invoked. We found that when graphene contains a small angle grain boundary the buckling strains are larger when the ribbons with free (supported) boundary condition are subjected to compressive tension parallel (perpendicular) to the grain boundary. The shape of the deformations of the buckled graphene nanoribbons depends on the boundary conditions and the presence of the grain boundary and the direction of applied in-plane compressive tensio…
We study analytically, based on the tight-binding model, the electronic band structure of armchair AA-stacked bilayer graphene nanoribbons (BLGNRs) in several regimes. We apply hard-wall boundary conditions to determine the discretion dominating on the Bloch wavefunctions in the confined direction. First we consider an ideal case, perfect nanoribbons without any edge deformation, and show that their electronic properties are strongly size-dependent. We find that the narrow armchair AA-stacked BLGNRs (similar to single-layer graphene nanoribbons) may be metallic or semiconducting depending on t…
We present a first-principles study of the migration and recombination of edge defects (carbon adatom and/or vacancy) and their influence on electrical conductance in zigzag graphene nanoribbons (ZGNRs). It is found that at room temperature, the adatom is quite mobile while the vacancy is almost immobile along the edge of ZGNRs. The recombination of an adatom-vacancy pair leads to a pentagon-heptagon ring defect structure having a lower energy than the perfect edge, implying that such an edge-defect can be formed spontaneously. This edge defect can suppresses the conductance of ZGNRs drastical…
We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage V_{g}. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends non-monotonously on the on-site potential V.
Graphene on a substrate will suffer an inversion-symmetry-breaking (ISB) lattice potential. Taking electron-electron interaction into account, we study in this paper the possibility of half-metallicity and noncollinear (NC) magnetic phase for graphene zigzag nanoribbons without inversion symmetry. At half-filling it is found that half-metallic(HM) state can be achieved at an intermediate value of the ISB potential due to its competition with the electron-electron interaction. Away from half-filling, the phase diagrams of doping versus ISB potential for different ribbon width are given, where t…
We study the conductivity of disordered zigzag graphene nanoribbons in the incoherent regime by using the Boltzmann equation approach. The band structure of zigzag nanoribbons contains two energy valleys, and each valley has an excess one-way channel. The crucial point is that the numbers of conducting channels for two propagating directions are imbalanced in each valley due to the presence of an excess one-way channel. It was pointed out that as a consequence of this imbalance, a perfectly conducting channel is stabilized in the coherent regime if intervalley scattering is absent. We show tha…
We exploited graphene nanoribbons based meta-surface to realize coherent perfect absorption (CPA) in the mid-infrared regime. It was shown that quasi-CPA frequencies, at which CPA can be demonstrated with proper phase modulations, exist for the graphene meta-surface with strong resonant behaviors. The CPA can be tuned substantially by merging the geometric design of the meta-surface and the electrical tunability of graphene. Furthermore, we found that the graphene nanoribbon meta-surface based CPA is realizable with experimental graphene data. The findings of CPA with graphene meta-surface can…
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostat…
We theoretically study graphene nanoribbons in the presence of spatially varying magnetic fields produced e.g. by nanomagnets. We show both analytically and numerically that an exceptionally large Rashba spin orbit interaction (SOI) of the order of 10 meV can be produced by the non-uniform magnetic field. As a consequence, helical modes exist in armchair nanoribbons that exhibit nearly perfect spin polarization and are robust against boundary defects. This paves the way to realizing spin filter devices in graphene nanoribbons in the temperature regime of a few Kelvins. If a nanoribbon in the h…
Numerical calculations have been performed to elucidate unconventional electronic transport properties in disordered nanographene ribbons with zigzag edges (zigzag ribbons). The energy band structure of zigzag ribbons has two valleys that are well separated in momentum space, related to the two Dirac points of the graphene spectrum. The partial flat bands due to edge states make the imbalance between left- and right-going modes in each valley, {\it i.e.} appearance of a single chiral mode. This feature gives rise to a perfectly conducting channel in the disordered system, i.e. the average of c…
Graphene is promising as a host material for electron spin qubits because of its predicted potential for long coherence times. In armchair graphene nanoribbons (aGNRs) a small bandgap is opened, allowing for electrically gated quantum dots, and furthermore the valley degeneracy is lifted. The spin lifetime T_1 is limited by spin relaxation, where the Zeeman energy is absorbed by lattice vibrations, mediated by spin-orbit and electron-phonon coupling. We have calculated T_1 by treating all couplings analytically and find that T_1 can be in the range of seconds for several reasons: (i) low phono…
Graphene nanoribbons can be folded into a double layer system keeping the two layers decoupled. In the Quantum Hall regime folds behave as a new type of Hall bar edge. We show that the symmetry properties of the zero Landau level in metallic nanoribbons dictate that the zero energy edge states traversing a fold are perfectly transmitted onto the opposite layer. This result is valid irrespective of fold geometry, magnetic field strength and crystallographic orientation of the nanoribbon. Backscattering suppression on the N=0 Hall plateau is ultimately due to the orthogonality of forward and bac…
We report on the transport properties of novel carbon nanostructures made of partially unzipped carbon nanotubes, which can be regarded as a seamless junction of a tube and a nanoribbon. We find that graphene nanoribbons act at certain energy ranges as a perfect valley filters for carbon nanotubes, with the maximum possible conductance. Our results show that a partially unzipped carbon nanotube is a magnetoresistive device, with a very large value of the magnetoresistance. We explore the properties of several structures combining nanotubes and graphene nanoribbons, demonstrating that they beha…
A graphene sheet gated with a ridged ground plane, creating a soft-boundary (SB) graphene nanoribbon, is considered. By adjusting the ridge parameters and bias voltage a channel can be created on the graphene which can guide TM surface plasmon polaritons (SPP). Two types of modes are found; fundemental and higher-order modes with no apparent cutoff frequency and with energy distributed over the created channel, and edge modes with energy concen-trated at the soft-boundary edge. Dispersion curves, electric near-field patterns, and current distributions of these modes are determined. Since the l…
We study the effect of electron-electron interaction and spin on electronic and transport properties of gated graphene nanoribbons (GNRs) in a perpendicular magnetic field in the regime of the lowest Landau level (LL). The electron-electron interaction is taken into account using the Hartree and Hubbard approximations, and the conductance of GNRs is calculated on the basis of the recursive Greens function technique within the Landauer formalism. We demonstrate that, in comparison to the one-electron picture, electron-electron interaction leads to the drastic changes in the dispersion relation …
Using first principles pseudopotential density functional theory calculations, we find that terminating zigzag graphene nanoribbons (ZGNR) with monovalent alkali atoms at a reduced concentration has a dramatic impact on their properties. In particular, using sodium atoms for the saturation of ZGNR edges at half the concentration of edge-carbon atoms make it a one dimensional, perfect semimetal, where the valance and conduction bands meet at only a single, Dirac-like point. Unlike pristine graphene, the Dirac-"cones" of Na-ZGNR is not symmetric with respect to wave vector, but rather it is tilt…
The graphene and phosphorene nanostructures have a big potential application in a large area of actuals research in physics. However, their methods of synthesis still do not allow the production of perfect materials with an intact molecular structure. In this paper, the occurrence of atomic vacancies was considered in the edge structure of the zigzag phosphorene and graphene nanoribbons. For different concentrations of these edge vacancies, their influence on the metallic properties was investigated. The calculations were performed for different sizes of the unit cell. Furthermore, for a small…
We study Andreev reflection in graphene nanoribbon/superconductor hybrid junctions. By using a tight-binding approach and the scattering formalism we show that finite-size effects lead to notable differences with respect to the bulk graphene case. At subgap voltages, conservation of pseudoparity, a quantum number characterizing the ribbon states, yields either a suppression of Andreev reflection when the ribbon has an even number of sites in the transverse direction or perfect Andreev reflection when the ribbon has an odd number of sites. In the former case the suppression of Andreev reflectio…
We study perfect valley polarization in a molybdenum disulfide MoS2 nanoribbon monolayer using two bands Hamiltonian model and non-equilibrium Green's function method. The device consists of a one-dimensional quantum wire of MoS2 monolayer sandwiched between two zigzag MoS2 nanoribbons such that the sites A and B of the honeycomb lattice are constructed by the molecular orbital of Mo atoms, only. Spin-valley coupling is seen in energy dispersion curve due to the inversion asymmetry and time-reversal symmetry. Although, the time reversal symmetry is broken by applying an external magnetic field…
We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F=10 kV/cm. Deposition on HfO2 strongly degrades the drift velocity by up to a factor of 10 with respect to suspended GNRs in the low-field regime, whereas at high fields drift velocity approaches the intrinsic value expected in suspended GNRs. Even in the assumption of perfect edges, the obtained mobility is far behind what expect…
We report a numerical study on Aharonov-Bohm (AB) effect and giant magnetoresistance in rectangular rings made of graphene nanoribbons (GNRs). We show that in low energy regime where only the first subband of contact GNRs contributes to the transport, the transmission probability can be strongly modulated, i.e., almost fully suppressed, when tuning a perpendicular magnetic field. On this basis, strong AB oscillations with giant negative magnetoresistance can be achieved at room temperature. The magnetoresistance reaches thousands % in perfect GNR rings and a few hundred % with edge disordered …
We study the conductance of graphene nanoribbons with long-range disorder. Due to the absence of intervalley scattering from the disorder potential, time-reversal symmetry (TRS) can be effectively broken even without a magnetic field, depending on the type of ribbon edge. Even though armchair edges generally mix valleys, we show that metallic armchair nanoribbons possess a hidden pseudovalley structure and effectively broken TRS. In contrast, semiconducting armchair nanoribbons inevitably mix valleys and restore TRS. As a result, in strong disorder metallic armchair ribbons exhibit a perfectly…
Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for …
Junctions composed of two crossed graphene nanoribbons (GNRs) have been theoretically proposed as electron beam splitters where incoming electron waves in one GNR can be split coherently into propagating waves in \emph{two} outgoing terminals with nearly equal amplitude and zero back-scattering. Here we scrutinize this effect for devices composed of narrow zigzag GNRs taking explicitly into account the role of Coulomb repulsion that leads to spin-polarized edge states within mean-field theory. We show that the beam-splitting effect survives the opening of the well-known correlation gap and, mo…
We numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and morphology of the BN islands embedded in the graphene matrix, a wide transport tunability is obtained from perfect insulating interfaces to asymmetric electron-hole transmission profiles, providing the possibility to engineer mobility gaps to improve device performances. Even in the low-density limit of embedded BN islands, transport properties are found to b…
Based on the investigation of the multi-terminal conductance of a system composed of two graphene nanoribbons, in which one is on top of the other and rotated by 60 degrees, we propose a setup for a 50/50 electronic beam splitter that neither requires large magnetic fields nor ultra low temperatures. Our findings are based on an atomistic tight-binding description of the system and on the Green's function method to compute the Landauer conductance. We demonstrate that this system acts as a perfect 50/50 electronic beam splitter, in which its operation can be switched on and off by varying the …
Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP) wavelength. In this paper, we design active plasmonic waveguide devices based on electrical-modulation of doped graphene nanoribbons (GNRs) on a voltage-gated inhomogeneous dielectric layer. We first develop figure-of-merit (FoM) formulae to characterize the performance of passive and active graphene nanoribbon waveguides. Based on the FoMs, we choose optimal GN…
Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ~ 0.2 V and the valley current almost vanishes.…
We employ the formalism of bond currents, expressed in terms of the nonequilibrium Green functions, to image the charge flow between two sites of the honeycomb lattice of graphene ribbons of few nanometers width. In sharp contrast to nonrelativistic electrons, current density profiles of quantum transport at energies close to the Dirac point in clean zigzag graphene nanoribbons (ZGNR) differs markedly from the profiles of charge density peaked at the edges due to zero-energy localized edge states. For transport through the lowest propagating mode induced by these edge states, edge vacancies do…
We study the size effects on the transport properties in topological Anderson insulators by means of the Landauer-Büttiker formalism combined with the nonequilibrium Green function method. Conductances calculated for serval different widths of the nanoribbons reveal that there is no longer quantized plateaus for narrow nanoribbons. The local spin-resolved current distribution demonstrates that the edge states on the two sides can be coupled, leading to enhancement of backscattering as the width of the nanoribbon decreases, thus destroying the perfect quantization phenomena in the topological A…
A thermoelectric voltage is induced in a junction, constituted of two dissimilar materials under a temperature gradient. Similarly, a thermosize voltage is expected to be induced in a junction made by the same material but having different sizes, so-called thermosize junction. This is a consequence of dissimilarity in Seebeck coefficients due to differences in classical and/or quantum size effects in the same materials with different sizes. The studies on thermosize effects in literature are mainly based on semi-classical models under relaxation time approximation or even simpler local equilib…
