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arXiv 1209.4263cond-mat.mes-hallcond-mat.mtrl-sci
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Cs覆盖拓扑绝缘体表面Sb2Te3(0001)上的单Dirac-锥

Single Dirac-cone on the Cs-covered topological insulator surface Sb2Te3(0001)

Christoph Seibel, Henriette Maaß, Minoru Ohtaka, Sebastian Fiedler, Christian Jünger, Chul-Hee Min, Hendrik Bentmann, Kazuyuki Sakamoto, Friedrich Reinert

摘要:

利用角分辨光电子能谱学研究了三维拓扑绝缘体(TI)Sb_2 Te_3(0001)的表面电子结构。我们的数据表明,在体能隙中存在一个拓扑表面态,其Dirac点位于费米能级之上。Cs原子在Sb_2 Te_3(0001)上的吸附引起电子价带态的向下能量移动,其饱和值为~200 meV。对于饱和覆盖度,线性色散表面态的Dirac点位于费米能级附近。因此,电子结构的Cs/Sb 2 Te 3接口相当大地偏离先前研究的金属TI接口的基础上的同构化合物Bi 2Se 3的原子组成的重要性,在这些异质系统。

英文摘要:

Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valence band states which saturates at a value of ~200 meV. For the saturation coverage the Dirac-point of the linearly dispersive surface state resides in close proximity to the Fermi level. The electronic structure of the Cs/Sb2Te3 interface therefore considerably deviates from previously studied metal-TI interfaces based on the isostructural compound Bi2Se3 which points to the importance of atomic composition in these hetero systems.

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