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arXiv 1206.4561cond-mat.mtrl-scicond-mat.mes-hall
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拓扑绝缘体Bi2Te3中的超快表面载流子动力学

Ultrafast surface carrier dynamics in the topological insulator Bi2Te3

M. Hajlaoui, E. Papalazarou, J. Mauchain, G. Lantz, N. Moisan, D. Boschetto, Z. Jiang, I. Miotkowski, Y. P. Chen, A. Taleb-Ibrahimi, L. Perfetti, M. Marsi

摘要:

讨论了飞秒激光激发下拓扑绝缘体Bi $_2$ Te $_3$表面电子结构的超快演化.使用时间和角度分辨的光电子能谱学,我们提供了一个直接的实时可视化的瞬态载流子人口的表面状态和体导带。我们发现,表面态的热化最初是由带间散射从体导带,持续约0.5 ps;随后,几个ps是必要的狄拉克锥非平衡电子恢复费米-狄拉克分布,而他们的弛豫超过10 ps。我们的测量的表面灵敏度使得它可以估计的散装表面带间散射通道的范围,表明该过程是有效的超过5 nm或less. This的距离建立了散装电荷水库的纳米级厚度和超快载流子动力学的演变之间的相关性在表面狄拉克锥。

英文摘要:

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few ps are necessary for the Dirac cone non-equilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.

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