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arXiv 0902.0939cond-mat.mtrl-scicond-mat.other
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Diffusion-free ultrafast carrier dynamics in silicon nano-pillars

D. Chekulaev, A. Kaplan

英文摘要:

We have investigated ultrafast carriers dynamics in crystalline silicon nano-pillars structure using a pump-probe reflectivity method with 800 nm, 150 fs laser pulses and fluence in the range of {17 - 170} mJ/cm^2. Dimensions of the structure allow us to eliminate contribution from the diffusion process to the relaxation dynamics of the excited carriers. Strong intensity-dependent time-resolved reflectivity change, ΔR(τ_d), was monitored in the submelting regime. At strong pumping ΔR(τ_d) can reach up to 8%, a several times higher than for a bulk silicon. From the measurements we deduced recombination time of up to 10 ns at carriers density of ~1 x 10^20 cm^-3, while electron-phonon interaction occurs during 350-400 fs and it is independent of the concentration.

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