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arXiv 1208.0522cond-mat.mes-hall
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石墨烯中$g$ -因子的相互作用诱导增强

Interaction-induced enhancement of $g$-factor in graphene

A. V. Volkov, A. A. Shylau, I. V. Zozoulenko

摘要:

本文采用Hartree近似和Hubbard近似,在Fermi模型下研究了垂直磁场中电子相互作用对石墨烯自旋分裂和$g$因子的影响.我们发现,$g$ -因子是增强相比,其自由电子值$g=2$和振荡的填充因子$ν$的范围内$2\leq g^{\ast}\lesssim 4$达到最大值,甚至$ν$和最小值在奇数$ν$的函数。我们概述了带电杂质在基板中的作用,这被证明是抑制振荡的$g^{\ast}$ -因子。当有效的$g$因子变得与填充因子无关,达到$g^{\ast}\approx 2.3$的值时,这种效应随着杂质浓度的增加而变得特别明显。与最近的实验进行了讨论。

英文摘要:

We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is enhanced in comparison to its free electron value $g=2$ and oscillates as a function of the filling factor $ν$ in the range $2\leq g^{\ast}\lesssim 4$ reaching maxima at even $ν$ and minima at odd $ν$. We outline the role of charged impurities in the substrate, which are shown to suppress the oscillations of the $g^{\ast}$-factor. This effect becomes especially pronounced with the increase of the impurity concentration, when the effective $g$-factor becomes independent of the filling factor reaching a value of $g^{\ast}\approx 2.3$. A relation to the recent experiment is discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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