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arXiv 1406.2471cond-mat.supr-concond-mat.mes-hall
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双层少层石墨烯中电子-空穴超流性的增强

Enhancement of electron-hole superfluidity in double few-layer graphene

M. Zarenia, A. Perali, D. Neilson, F. M. Peeters

摘要:

我们提出了两个耦合的电子-空穴片的少层石墨烯作为一种新的纳米结构,以观察在增强的密度和增强的转变温度的超流性。对于ABC堆叠的几层石墨烯,我们表明,强关联电子-空穴配对制度是很容易获得的实验使用当前的技术。我们发现,双三层和四层石墨烯片空间上分开的纳米厚的六方氮化硼绝缘屏障,电子空穴超流性的转变温度可以接近40 K的温度。

英文摘要:

We propose two coupled electron-hole sheets of few-layer graphene as a new nanostructure to observe superfluidity at enhanced densities and enhanced transition temperatures. For ABC stacked few-layer graphene we show that the strongly correlated electron-hole pairing regime is readily accessible experimentally using current technologies. We find for double trilayer and quadlayer graphene sheets spatially separated by a nano-thick hexagonal boron-nitride insulating barrier, that the transition temperature for electron-hole superfluidity can approach temperatures of 40 K.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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