arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2203.04669cond-mat.supr-con
收藏

邻近化石墨烯中载流子密度降低对超导电性的增强

Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene

Gopi Nath Daptary, Udit Khanna, Eyal Walach, Arnab Roy, Efrat Shimshoni, Aviad Frydman

摘要:

单层石墨烯耦合到氧化铟(InO)膜,低载流子密度超导体的超导转变温度(Tc)被发现随着载流子密度的降低而增加,并且在石墨烯中的平均电荷中性点附近最大。这种效应在常规BCS超导体中是非常令人惊讶的。我们从实验和理论两方面研究了这一现象。我们的分析表明,InO薄膜诱导随机电子和空穴掺杂的水坑中的石墨烯。相反极性的这些区域的约瑟夫森效应增强了超导团簇之间的约瑟夫森耦合在InO,以及双层异质结构的整体Tc。当系统的化学势在电子和空穴掺杂区域的电荷中性点之间调谐时,这种增强是最有效的。

英文摘要:

The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average charge neutrality point in graphene. Such an effect is very surprising in conventional BCS superconductors. We study this phenomenon both experimentally and theoretically. Our analysis suggests that the InO film induces random electron and hole-doped puddles in the graphene. The Josephson effect across these regions of opposite polarity enhances the Josephson coupling between the superconducting clusters in InO, along with the overall Tc of the bilayer heterostructure. This enhancement is most effective when the chemical potential of the system is tuned between the charge neutrality points of the electron and hole-doped regions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑