LaTiO3/SrTiO3异质结构中高迁移率载流子掺杂诱导的二维超导电性
Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures
摘要：
在这封信中，我们表明，超导二维电子气形成在LaTiO_3/SrTiO_3界面，其转变温度可以调制的背栅电压。气体由两种类型的载流子组成：大多数低迁移率的载流子总是存在的，和一些高迁移率的，可以通过静电掺杂注入。对电子在约束势中空间分布的计算表明，导致超导的高迁移率电子位于气体的边缘，其延伸可以通过场效应来调节。
英文摘要：
In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.
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