André Chanthbouala, Vincent Garcia, Ryan O. Cherifi, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Stéphane Xavier, Hiroyuki Yamada, Cyrile Deranlot, Neil D. … 展开作者
André Chanthbouala, Vincent Garcia, Ryan O. Cherifi, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Stéphane Xavier, Hiroyuki Yamada, Cyrile Deranlot, Neil D. Mathur, Manuel Bibes, Agnès Barthélémy, Julie Grollier
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices
INN-CONICET-CNEA（阿根廷国家原子能委员会-国家科学研究委员会研究所）；Universidad Argentina de la Empresa (UADE)（阿根廷企业大学）；Instituto de Nanociencia y Materiales de Aragón (INMA-CSIC)（阿拉贡纳米科学与材料研究所）；Universidad de Zaragoza（萨拉戈萨大学）；Catalan Institute of Nanoscience and Nanotechnology (ICN2)（加泰罗尼亚纳米科学与技术研究所）；Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay（巴黎萨克雷大学-CNRS纳米科学中心）；University of Groningen（格罗宁根大学）
